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| Place of Origin | China |
| Brand Name | ZMSH |
| Certification | ROHS |
| Model Number | 4H-Semi SIC |
Description:
Semi-Insulating 4H-SiC (semi-insulating 4H-SIC) is a special type of silicon carbide material. In the crystal structure, 4H-semiconductor SIC has semiconductor properties, while semi-insulated 4H-semiconductor silicon carbide has higher resistance characteristics, showing properties similar to insulators. Semi-insulated 4H-semiconductor silicon carbide has important applications in semiconductor device manufacturing, esp. in high power and high temperature applications. Due to its higher resistance properties, semi-insulated silicon carbide can be used as a resistor, isolation layer, or substrates to help reduce current interconnection and interference between devices."4H" indicates the crystal structure of silicon carbide. 4H-silicon-carbide is a form of crystal structure in which silicon and carbon atoms to form a stable crystal structure.
Features:
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Features |
Descriptions |
|
High-temperature property |
4H-semiconductor silicon carbide has excellent high temperature characteristics and can work in high temperature environments. |
|
High pressure resistance |
4H- semiconductor silicon carbide has high breakdown electric field strength and voltage resistance. This makes it suitable for high voltage applications such as power electronics. |
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High requency response |
4H-semiconductor silicon carbide has high electron mobility and low capacitance characteristics, enabling high-speed switching and low-loss power conversion. |
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Low on-off loss |
4H-semi SIC has a low on-off loss, that is, less energy loss in the conductive state, reducing heat loss in energy conversion. |
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High radiation resistance |
4H-semi SIC has a high resistance to radiation and can maintain stable performance in high radiation environments. |
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Good thermal conductivity |
4H-semi SIC has good thermal conductivity and can effectively transfer and disperse heat. |
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High chemical resistance |
4H-semi SIC has high resistance to chemical corrosion and oxidation to maintain stable performance in harsh environments. |
Technical Parameters:
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|
Production |
Research |
Dummy |
|
Type |
4H |
4H |
4H |
|
Resistivity(ohm·cm) |
≥1E9 |
100% area＞1E5 |
70% area＞1E5 |
|
Diameter |
150± 0.2mm |
150± 0.2mm |
150± 0.2mm |
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Thickness |
500±25μm |
500±25μm |
500±25μm |
|
Axis |
<0001> |
<0001> |
<0001> |
|
TTV |
≤5μm |
≤10μm |
≤20μm |
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LTV(5mm*5mm) |
≤3μm |
≤5μm |
≤10μm |
|
Bow |
-25μm~25μm |
-35μm~35μm |
-45μm~45μm |
|
Warp |
≤35μm |
≤45μm |
≤55μm |
|
Ra(5um*5um) |
Ra≤0.2nm |
Ra≤0.2nm |
Ra≤0.2nm |
|
Micropipe Density |
≤1ea/cm2 |
≤10ea/cm2 |
≤15ea/cm2 |
1. High purity 4H-semi SIC substrate can be used in power electronic devices.
2. High purity 4H-semi SIC can be used to manufacture optoelectronic devices.
3. High purity 4H-semi SIC can be used as high-frequency power amplifiers devices.
4. High purity 4H-semi SIC can be used can be used to manufacture efficient solar cells.
5. High purity 4H-semi SIC can be used to manufacture LED (light emitting diode) devices.
6. High purity 4H-semi SIC has important applications in high temperature electronic devices.
7. High purity 4H-semi SIC can be used can be used to manufacture various types of sensors
FAQ:
Q: What is the Certification of HPSI 4h-semi SIC?
A: The Certification of HPSI 4h-semi SIC is ROHS.
Q: What is the Brand Name of HPSI 4h-semi SIC?
A: The Brand Name of HPSI 4h-semi SICis ZMSH.
Q: Where is the Place of Origin of HPSI 4h-semi SIC?
A: The Place of Origin of HPSI 4h-semi SIC is CHINA.
Q: What is the MOQ of HPSI 4h-semi SIC at one time?
A: The MOQ of HPSI 4h-semi SIC is 25pcs at one time.
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