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2inch 3inch 4inch SiC Substrate 330um Thickness 4H-N Type Grade Production
  • 2inch 3inch 4inch SiC Substrate 330um Thickness 4H-N Type Grade Production
  • 2inch 3inch 4inch SiC Substrate 330um Thickness 4H-N Type Grade Production
  • 2inch 3inch 4inch SiC Substrate 330um Thickness 4H-N Type Grade Production
  • 2inch 3inch 4inch SiC Substrate 330um Thickness 4H-N Type Grade Production

2inch 3inch 4inch SiC Substrate 330um Thickness 4H-N Type Grade Production

Place of Origin CHINA
Brand Name ZMSH
Certification rohs
Model Number SiC Substrate
Product Details
Size:
Customized
Breakdown Voltage:
5.5 MV/cm
Substrate Type:
SiC Substrate
Material:
Silicon Carbide
Surface Hardness:
HV0.3>2500
Surface Roughness:
Ra<0.5nm
Dopant:
N/A
Dielectric Constant:
9.7
High Light: 

330um Thickness SiC Substrate

,

3inch SiC Substrate

,

4H-N Type SiC Substrate

Product Description

Product Description:

The SiC Substrate is available in various sizes, including 2inch, 3inch, 4inch, 6inch, and 8inch. This allows customers to choose the most suitable size for their specific application needs.

The SiC Substrate has a density of 3.21 G/cm3, making it a highly durable and robust material. Its surface hardness of HV0.3>2500 ensures that it can withstand high temperatures and harsh environments, making it suitable for use in extreme conditions.

The resistivity of the SiC Substrate is 0.015~0.028ohm.cm or >1E7ohm.cm, making it an excellent conductor of electricity. This feature ensures that it can be used in various electronic devices that require high conductivity.

The SiC Substrate is available in custom size plates, including 1x1cm, 0.5x0.5mm, 5x5mm, and 10x10mm. This gives customers the flexibility to choose the specific size that meets their design and manufacturing requirements.

In summary, the SiC Substrate is a high-quality material that offers exceptional physical and chemical properties, making it an ideal choice for various electronic devices. Its availability in different sizes, including custom size plates such as 1x1cm and 0.5x0.5mm, makes it a versatile and flexible material for design and manufacturing purposes.

 

Features:

  • Product Name: SiC Substrate
  • Custom Size Plates: 0.5x0.5mm, 1x1mm, 5x5mm, 10x10mm
  • Dielectric Constant: 9.7
  • Surface: Si-face CMP, C-face MP
  • Surface Hardness: HV0.3>2500
  • Tensile Strength: >400MPa

Our SiC Substrate product is ideal for silicon carbide wafers and comes in custom size plates including 1x1cm and 0.5x0.5mm.

 

Applications:

The SiC substrate product is available in customized sizes, allowing it to be used in various applications. It can be used in the electronics industry, including in the production of power devices, high-frequency devices, and microwave devices. The customized size sic chips are perfect for creating highly efficient and reliable electronic devices. The SiC substrate product has a thermal expansion coefficient of 4.5 X 10-6/K, which makes it an ideal material for high-temperature applications.

The SiC substrate product is also suitable for use in the semiconductor industry, where it can be used in the production of blue and green LEDs, as well as in the manufacturing of high-power transistors. The SiC substrate product is available in both Si-face CMP and C-face MP surfaces, providing more options for semiconductor manufacturers.

Customized size sic chips are also useful in the development of advanced power electronic devices, such as inverters and converters. Because of its high thermal conductivity, the SiC substrate product is ideal for these applications. The resistivity of the SiC substrate product is 0.015~0.028ohm.cm or >1E7ohm.cm, making it suitable for use in a wide range of electronic devices.

The SiC substrate product can also be used in the optics industry, specifically in the production of laser cutting machines. The product's customized size sic chips can be used to create laser-cutting devices that are highly precise and efficient.

In summary, the ZMSH SIC010 SiC substrate product is versatile and can be used in various industries, including electronics, semiconductors, power electronics, and optics. Its customizable size and excellent thermal conductivity make it an ideal material for high-temperature applications. Its availability in both Si-face CMP and C-face MP surfaces also make it more versatile. This product is a reliable and efficient option for those in need of high-quality SiC substrate products.

 

Customization:

ZMSH SIC010 SiC substrate is a high-quality substrate that can be customized to your specifications. Our substrate is made in CHINA and is ROHS certified. The minimum order quantity is 10pc and the price is by case. Packaging details include customized plastic box for your convenience. Delivery time is within 30 days and payment terms are T/T. Our supply ability is 1000pc/month.

This substrate has a thermal conductivity of 4.9 W/mK and a resistivity of 0.015~0.028ohm.cm; Or >1E7ohm.cm;. The dopant is N/A and the substrate type is substrate. The size can be customized to your needs.

Our product customization services for ZMSH SIC010 SiC substrate include 4h-semi HPSI sic wafer, sic laser cutting, and sic laser cutting. Contact us to learn more about our customization options.

 

Packing and Shipping:

Product Packaging:

The SiC substrate will be packaged in a protective foam material to prevent any damage during transportation. The foam material will be placed in a sturdy cardboard box with a label indicating the product name and specifications.

Product Shipping:

The SiC substrate will be shipped via a reputable courier service to ensure timely and safe delivery. Shipping costs and estimated delivery times will be provided upon checkout or upon request.

Contact Us at Any Time

86-1580-1942596
Rm5-616,No.851,Dianshanhu avenue, Qingpu area,Shanghai city,CHINA
Send your inquiry directly to us