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SiC Epitaxial Wafer Substrate Semiconductor Industrial Applications 4H-N
  • SiC Epitaxial Wafer Substrate Semiconductor Industrial Applications 4H-N
  • SiC Epitaxial Wafer Substrate Semiconductor Industrial Applications 4H-N
  • SiC Epitaxial Wafer Substrate Semiconductor Industrial Applications 4H-N
  • SiC Epitaxial Wafer Substrate Semiconductor Industrial Applications 4H-N

SiC Epitaxial Wafer Substrate Semiconductor Industrial Applications 4H-N

Place of Origin CHINA
Brand Name ZMSH
Certification rohs
Model Number SiC substrate
Product Details
Surface Hardness:
HV0.3>2500
Breakdown Voltage:
5.5 MV/cm
Tensile Strength:
>400MPa
Substrate Type:
Substrate
Density:
3.21 G/cm3
Dopant:
N/A
Size:
Customized
Thermal Expansion Coefficient:
4.5 X 10-6/K
High Light: 

Semiconductor SiC epitaxial wafer substrate

,

Double side Polishing Semiconductor SiC substrate

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Industrial SiC epitaxial wafer substrate

Product Description

SiC epitaxial wafer substrate Semiconductor industrial applications 4H-N

Product Description:

  Silicon carbide (SiC Substrate) was discovered in 1893 as an industrial abrasive for grinding wheels and automotive brakes. About midway through the 20th century, SiC Substrate uses grew to include in LED technology. Since then, it has expanded into numerous semiconductor applications due to its advantageous physical properties. These properties are apparent in its wide range of uses in and outside the semiconductor industry. With Moore’s Law appearing to reach it’s limit, many companies within the semiconductor industry is looking towards silicon carbide as the semiconductor material of the future.
  SiC Substrate can be produced using multiple polytypes of SiC, although within the semiconductor industry, most substrates are either 4H-SiC, with 6H- becoming less common as the SiC market has grown. When referring to 4H- and 6H- silicon carbide, the H represents the structure of the crystal lattice. The number represents the stacking sequence of the atoms within the crystal structure. This is described in the SVM capabilities chart below.

 

Features:

ParameterValueUnitDescription
Hardness9.5Mohs hardnessExtremely high hardness, suitable for wear-resistant applications
Density3.21g/cm³High density, suitable for high-temperature and high-pressure environments
Electrical Resistivity10^3 to 10^11Ω·cmDepends on doping level, suitable for high-voltage applications
Thermal Conductivity490W/m·KHigh thermal conductivity, suitable for power electronics needing effective heat dissipation
Thermal Expansion Coefficient4.0 × 10^-6/KLow thermal expansion coefficient, ensures dimensional stability under temperature variations
Refractive Index2.55 to 2.75DimensionlessApplicable in optical uses, especially in the visible to near-infrared range

 

Applications:

4H-N SiC (silicon carbide) is a semiconductor material that is widely used in high-performance electronic devices due to its excellent thermal conductivity, electrical properties and chemical stability. Especially in high temperature, high pressure or high frequency environments, the characteristics of 4H-N SiC make it an ideal choice. This material is mainly used in the manufacture of high performance power devices and electronic components such as Schottky diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors (IGBTs). In addition, 4H-N SiC is also used in the production of LED lights and components for high-frequency communication systems, as it can effectively reduce system energy consumption and improve overall performance and reliability.
ZMSH SIC010 is versatile and can be used in a variety of industries. Its excellent properties make it an ideal choice for high-temperature, high-power, and harsh environments. The customized plastic boxes make it easy to transport and store the silicon carbide wafers.

 

Customization:

ZMSH SIC Substrate Product Customization Services:

  • Customized shape SiC plates available
  • Customized size SiC chips available
  • Silicon carbide wafers also available

Product Attributes:

Brand NameZMSH
Payment TermsT/T
Minimum Order Quantity10pc
Surface RoughnessRa<0.5nm
Compressive Strength>1000MPa
Tensile Strength>400MPa
 

Packing and Shipping:

Product Packaging:
The SiC substrate product will be carefully wrapped in foam padding to ensure its safety during shipping. The wrapped substrate will then be placed in a sturdy cardboard box and sealed to prevent any damage during transportation.
Shipping:
The SiC substrate product will be shipped via a reliable courier service that provides tracking information, such as DHL or FedEx. The shipping cost will depend on the destination and the weight of the package. The estimated shipping time will also depend on the location of the recipient.

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