Product Details
Place of Origin: Shanghai China
Brand Name: ZMSH
Certification: ROHS
Model Number: Sapphire wafers
Payment & Shipping Terms
Delivery Time: in 30 days
Payment Terms: T/T
Chemical Formula: |
Al2O3 |
Density: |
0.144 Lb/in3 |
Melting Point: |
2310 K (2040° C) |
Compression Strength: |
300,000 Psi (ultimate) |
Diameter: |
304.8mm |
Surface: |
DSP |
Chemical Formula: |
Al2O3 |
Density: |
0.144 Lb/in3 |
Melting Point: |
2310 K (2040° C) |
Compression Strength: |
300,000 Psi (ultimate) |
Diameter: |
304.8mm |
Surface: |
DSP |
12inch C-aixs Al2O3 Sapphire Wafer DSP Diameter 304.8mm Customized thickness
Product description
Sapphire wafers are used for thinning and polishing cadmium gallium arsenide (CdGaAs) chips. Traditional thinning processes for CdGaAs chips are prone to chip breakage due to the weight and pressure applied by the equipment. Additionally, surface stress accumulation during thinning can cause warping, resulting in a significant loss of product performance. Metal wafers used for thinning can introduce metal contamination, while chip adhesives and chemical polishing solutions can introduce impurities. The new thinning process involves bonding the CdGaAs chips to sapphire wafers (slightly larger in diameter than the target chips) under high-temperature conditions. The CdGaAs/sapphire bonded chips are attached to a ceramic plate and subjected to thinning and polishing using special fixtures. Subsequently, the sapphire and CdGaAs chips are separated by melting the bond in a high-temperature rinse. The new thinning process is applicable to CdGaAs and various semiconductor chips, and the carrier material can be sapphire, glass, or other polished wafers. Sapphire has become the mainstream choice for carriers due to its superior physical and chemical properties, as well as its crystalline structure. Our company offers sapphire carriers that meet industry-standard thinning equipment requirements. The 4-inch wafer has a diameter of 104 mm, while the 6-inch wafer has a diameter of either 156 mm or 159 mm, slightly larger than the standard 4-inch and 6-inch wafers. The polished surface roughness is also provided.
Product parameter
GENERAL | |||||
Chemical Formula | Al2O3 | ||||
Crystal Stucture | Hexagonal System ((hk o 1) | ||||
Unit Cell Dimension | a=4.758 Å,Å c=12.991 Å, c:a=2.730 | ||||
PHYSICAL | |||||
Metric | English (Imperial) | ||||
Density | 3.98 g/cc | 0.144 lb/in3 | |||
Hardness | 1525 - 2000 Knoop, 9 mhos | 3700° F | |||
Melting Point | 2310 K (2040° C) | ||||
STRUCTURAL | |||||
Tensile Strength | 275 MPa to 400 MPa | 40,000 to 58,000 psi | |||
at 20° | 400 MPa | 58,000 psi (design min.) | |||
at 500° C | 275 MPa | 40,000 psi (design min.) | |||
at 1000° C | 355 MPa | 52,000 psi (design min.) | |||
Flexural Stength | 480 MPa to 895 MPa | 70,000 to 130,000 psi | |||
Compression Strength | 2.0 GPa (ultimate) | 300,000 psi (ultimate) |
Product application
Thin sapphire wafers were the first successful use of an insulating substrate upon which to deposit silicon to make the integrated circuits known as silicon on sapphire or "SOS", Besides its excellent electrical insulating properties, sapphire has high thermal conductivity. CMOS chips on sapphire are especially useful for high-power radio-frequency (RF) applications such as those found in cellular telephones, public-safety band radios, and satellite communication systems.
Wafers of single-crystal sapphire are also used in the semiconductor industry as substrates for the growth of devices based on gallium nitride (GaN). The use of sapphire significantly reduces the cost, because it has about one-seventh the cost of germanium. Gallium nitride on sapphire is commonly used in blue light-emitting diodes (LEDs).
Synthetic sapphire (sometimes referred to as sapphire glass) is commonly used as a window material, because it is both highly transparent to wavelengths of light between 150 nm (UV) and 5500 nm (IR) (the visible spectrum extends about 380 nm to 750 nm, and extraordinarily scratch-resistant. The key benefits of sapphire windows are:
* Very wide optical transmission band from UV to near-infrared
* Significantly stronger than other optical materials or glass windows
* Highly resistant to scratching and abrasion (9 on the Mohs scale of mineral hardness scale, the 3rd hardest natural substance next to moissanite and diamonds)
* Extremely high melting temperature (2030 °C)
Product display
FAQ
Q: What's your MOQ?
A: (1) For inventory, the MOQ is 10pcs.
(2) For customized products, the MOQ is 25pcs up.
Q: What's the way of shipping and cost?
A:(1) We accept DHL, Fedex, EMS etc.
(2) If you have your own express account, it's great.If not,we could help you ship them.
Freight is in accordance with the actual settlement.
Q: What's the delivery time?
For inventory: the delivery is 5 workdays after you place the order.
For customized products: the delivery is 2 or 3 weeks after you place the order.
Q: Do you have standard products?
A: Our standard products in stock.as like 4inch 0.65mm,0.5mm polished wafer.
Q: How to pay?
A:50%deposit, left before delivery T/T,
Q: Can I customize the products based on my need?
A: Yes, we can customize the material, specifications and optical coating for your optical
components based on your needs.