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SiC Substrate 4H-N Thickness 350um Used In Optoelectronics Semiconductor Material
  • SiC Substrate 4H-N Thickness 350um Used In Optoelectronics Semiconductor Material
  • SiC Substrate 4H-N Thickness 350um Used In Optoelectronics Semiconductor Material
  • SiC Substrate 4H-N Thickness 350um Used In Optoelectronics Semiconductor Material
  • SiC Substrate 4H-N Thickness 350um Used In Optoelectronics Semiconductor Material

SiC Substrate 4H-N Thickness 350um Used In Optoelectronics Semiconductor Material

Place of Origin Shanghai China
Brand Name ZMSH
Certification ROHS
Model Number SiC substrate
Product Details
Parameter:
N-type
Polytype:
4H
Growth Method:
CVD
Thickness:
350µm
Grades:
Prime, Dummy,Reaserch
Thermal Expansion Coefficient:
4.5 (10-6K-1)
High Light: 

4H-N SiC substrate

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350um SiC substrate

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Optoelectronics SiC substrate

Product Description

SiC substrate 4H-N thickness 350um used in optoelectronics semiconductor material

Product description

SiC substrates are key materials in the field of semiconductor technology, offering unique properties and promising applications. Silicon carbide (SiC) is a wide-bandgap semiconductor material known for its excellent electrical, thermal, and mechanical properties.

4H-N SiC substrates are typically n-type semiconductors, where nitrogen (N) dopants introduce excess electrons into the crystal lattice, making them suitable for applications requiring electron conduction. These substrates find applications in power electronics, high-frequency devices, and optoelectronics due to their high electron mobility and low on-resistance.

On the other hand, SiC substrates can also exhibit semi-insulating behavior, making them ideal for high-power and high-temperature applications. The semi-insulating properties arise from intrinsic defects or intentional doping with deep-level impurities, leading to a high resistivity and minimal electronic conduction. These substrates are widely used in high-power radiofrequency (RF) devices, microwave electronics, and harsh environment sensors.

The fabrication of high-quality SiC substrates involves advanced growth techniques such as physical vapor transport (PVT), chemical vapor deposition (CVD), or sublimation epitaxy. These techniques enable precise control over the material's crystal structure, purity, and dopant concentration, resulting in substrates with superior electrical and structural properties. The unique properties of SiC, combined with the precise fabrication processes, make SiC substrates highly valuable for a range of semiconductor applications.

Product parameter

Grade Zero MPD Grade Production Grade Research Grade Dummy Grade
Diameter 150.0 mm +/- 0.2 mm
Thickness 500 um +/- 25 um for 4H-SI350 um +/- 25 um for 4H-N
Wafer Orientation On axis: <0001> +/- 0.5 deg for 4H-SIOff axis: 4.0 deg toward <11-20> +/-0.5 deg for 4H-N
Micropipe Density (MPD) 1 cm-2 5 cm-2 15 cm-2 30 cm-2
Doping Concentration N-type: ~ 1E18/cm3SI-type (V-doped): ~ 5E18/cm3
Primary Flat (N type) {10-10} +/- 5.0 deg
Primary Flat Length (N type) 47.5 mm +/- 2.0 mm
Notch (Semi-Insulating type) Notch
Edge exclusion 3 mm
TTV /Bow /Warp 15um /40um /60um
Surface Roughness Polish Ra 1 nm
CMP Ra 0.5 nm on the Si face

Product nature

4H-N SiC substrates exhibit n-type conductivity due to the presence of nitrogen dopants, providing excess electrons for electronic conduction.
SiC substrates demonstrate semi-insulating behavior, characterized by high resistivity and minimal electronic conduction, which is essential for certain electronic and optoelectronic applications.

  • Bandgap:SiC substrates have a wide bandgap, typically around 3.0 eV, enabling their use in high-power and high-frequency devices and optoelectronic applications.
  • Thermal Conductivity:SiC substrates possess high thermal conductivity, allowing efficient dissipation of heat generated during device operation. This property is crucial for maintaining device reliability and performance, particularly in high-power and high-temperature applications.
  • Mechanical Properties:SiC substrates exhibit excellent mechanical properties, including high hardness, stiffness, and chemical inertness. These properties make them resistant to mechanical wear and corrosion, ensuring long-term device reliability in harsh operating conditions.
  • Crystal Structure:SiC substrates have a hexagonal crystal structure (4H polytype), which influences their electronic properties and device performance. The 4H crystal structure provides specific electronic band alignment and carrier mobility suitable for various semiconductor devices.
  • Surface Morphology:SiC substrates typically have a smooth surface morphology with low defect density, facilitating the growth of high-quality epitaxial layers and the fabrication of high-performance devices.
  • Chemical Stability:SiC substrates exhibit high chemical stability, making them resistant to degradation when exposed to corrosive environments or reactive chemicals. This property is advantageous for applications requiring long-term device reliability and stability.

Product display

SiC Substrate 4H-N Thickness 350um Used In Optoelectronics Semiconductor Material 0

Q&A
What is the difference between 4H-SiC and 6H-SiC?

All of the other SiC polytypes are a mixture of the zinc-blende and wurtzite bonding. 4H-SiC consists of an equal number of cubic and hexagonal bonds with a stacking sequences of ABCB. 6H-SiC is composed of two-thirds cubic bonds and one-third hexagonal bonds with a stacking sequences of ABCACB.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

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