Product Details
Place of Origin: China
Brand Name: ZMSH
Model Number: SiC Substrate
Payment & Shipping Terms
Delivery Time: 2-4 weeks
Payment Terms: T/T
Material: |
SiC Single Crystal |
Dia: |
50.8 Mm ± 0.38 Mm |
Grade: |
P Grade Or D Grade |
Thickness: |
350 Um Or 500 Um |
Orientation: |
On Axis: <0001> +/- 0.5 Deg |
Resistivity: |
≥1E5 Ω·cm |
Material: |
SiC Single Crystal |
Dia: |
50.8 Mm ± 0.38 Mm |
Grade: |
P Grade Or D Grade |
Thickness: |
350 Um Or 500 Um |
Orientation: |
On Axis: <0001> +/- 0.5 Deg |
Resistivity: |
≥1E5 Ω·cm |
SiC wafer, Silicon Carbide Wafer, SiC Substrate, Silicon Carbide Substrate, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type
About 4H-SEMI SiC
Description of 4H-SEMI SiC
Silicon Carbide (SiC) is a versatile semiconductor renowned for its performance in high-power and high-frequency applications.
Its wide bandgap enables efficient operation at high voltages and temperatures, making it suitable for power electronics, RF devices, and harsh environments.
SiC is integral to industries such as automotive and energy due to its reliability and efficiency.
Advanced manufacturing methods, like Chemical Vapor Deposition (CVD) and Physical Vapor Transport (PVT), ensure high-quality, durable components.
SiC's unique properties also make it ideal for short-wavelength optoelectronics, high-temperature environments, radiation resistance, and demanding electronic systems.
ZMSH offers a range of SiC wafers, including 6H and 4H types, no matter N type, SEMI type or HPSI type, ensuring high quality, stable supply, and cost-effectiveness through large-scale production processes.
Features of 4H-SEMI SiC
| 4-inch Diameter 4H Semi-insulating Silicon Carbide Substrate Specification | ||
| SUBSTRATE PROPERTY | Production Grade | Dummy Grade |
| Diameter | 50.8.0 mm +0.0/-0.38 mm | |
| Surface Orientation | on-axis: {0001} ± 0.2° | |
| Primary Flat Orientation | <11-20> ± 5.0˚ | |
| Secondary Flat Orientation | 90.0˚ CW from Primary ± 5.0˚, silicon face up | |
| Primary Flat Length | 32.5 mm ± 2.0 mm | |
| Secondary Flat Length | 18.0 mm ± 2.0 mm | |
| Wafer Edge | Chamfer | |
| Micropipe Density | ≤5 micropipes/cm2 | ≤50 micropipes/cm2 |
| Polytype Areas by High-Intensity Light | None permitted | ≤10% area |
| Resistivity | 0.015~0.028Ω·cm | (area 75%) |
| 0.015~0.028Ω·cm | ||
| Thickness | 350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm | |
| TTV | ≤10 μm | ≤15 μm |
| BOW (absolute value) | ≤25 μm | ≤30 μm |
| Warp | ≤45 μm | |
| Surface Finish | Double Side Polish, Si Face CMP (chemical polishing) | |
| Surface Roughness | CMP Si Face Ra≤0.5 nm | N/A |
| Cracks by high-intensity light | None permitted | |
| Edge Chips/Indents by Diffuse Lighting | None permitted | Qty.2 <1.0 mm width and depth |
| Total Usable Area | ≥90% | N/A |
| Note: Customerized specifications other than the above parameters are acceptable. | ||
More samples of 4H-SEMI SiC
*Please feel free to contact us if you have customized demands.
Similar product recommendations
2.4H-N Silicon Carbide SiC Substrate 8 inch Thickness 350um 500um P grade D grade SiC wafer
FAQ
1. Q: How does 4H-SiC Semi ensure the quality of its wafers?
A: 4H-SiC Semi employs advanced manufacturing techniques, including Chemical Vapor Deposition (CVD) and Physical Vapor Transport (PVT), and follows stringent quality control processes to ensure high-quality wafers.
2. Q: What's the main difference between 4H-N SiC and 4H-SEMI SiC
A: The primary difference between 4H-N SiC and 4H-SEMI SiC is that 4H-N SiC (Nitrogen-doped) is n-type semiconductor silicon carbide, whereas 4H-Semi SiC is semi-insulating silicon carbide, which has been processed to have very high resistivity.
Video
