Product Details
Place of Origin: China
Brand Name: ZMSH
Model Number: N-GaAs Substrate
Payment & Shipping Terms
Delivery Time: 2-4 weeks
Payment Terms: T/T
Material: |
Gallium Arsenide |
Size: |
2inch |
Thickness: |
430um |
Orientation: |
<111> <110> |
Type: |
N Type |
Cavity Mode Uniformity: |
≤ 1% |
Material: |
Gallium Arsenide |
Size: |
2inch |
Thickness: |
430um |
Orientation: |
<111> <110> |
Type: |
N Type |
Cavity Mode Uniformity: |
≤ 1% |
2inch N-Gallium Arsenide Substrate, N-GaAs VCSEL Epitaxial Wafer, Semiconductor epitaxial wafer, 2inch N-GaAs Substrate, GaAs single crystal wafer 2inch 3inch 4inch N-GaAs substrates, semiconductor wafer, N-Gallium Arsenide Laser Epitaxial Wafer
Features of N-GaAs Substrate
- use GaAs substrates to manufature
- support customized ones with design artwork
- direct bandgap, emits light efficiently, used in lasers.
- in the wavelength range of 0.7μm to 0.9μm, quantum well structures
- using techniques such as MOCVD or MBE, etching, metallization, and packaging to achieve the final form of the device
Description of N-GaAs Substrate
VCSEL (Vertical Cavity Surface Emitting Laser) epitaxial wafers based on N-GaAs (n-type gallium arsenide) substrates are a key optoelectronic material widely used in the fields of lasers and optical communications.
The N-GaAs substrate is composed of gallium (Ga) and arsenic (As), and uses n-type doping technology to increase the concentration of free electrons, thereby improving conductivity and electron mobility.
This material has an energy bandwidth of about 1.42 eV, which is suitable for laser emission and has excellent optoelectronic properties.
The structure of VCSEL usually includes multiple quantum wells and reflector layers, which are grown on the N-GaAs substrate to form an efficient laser cavity.
The quantum well layer is responsible for exciting and emitting lasers, while the reflector enhances the output efficiency of the laser.
The excellent thermal stability and electrical properties of the N-GaAs substrate ensure the high performance and stability of the VCSEL, making it perform well in high-speed data transmission.
VCSELs based on N-GaAs substrates are widely used in fields such as optical fiber communications, laser printers, and sensors.
Its high efficiency and low power consumption make it an important part of modern communication technology.
With the increasing demand for high-speed data transmission, VCSEL technology based on N-GaAs substrate is gradually becoming an important direction for the development of optoelectronics, promoting the progress and innovation of various applications.
Details of N-GaAs Substrate
| Parameter | VCSEL |
| rate | 25G/50G |
| wavelength | 850nm |
| size | 4inch/6inch |
| Cavity mode Tolerance | Within ±3% |
| Cavity mode Uniformity | ≤1% |
| Doping level Tolerance | Within ±30% |
| Doping level Uniformity | ≤10% |
| PL Wavelength Uniformity | Std.Dev better than 2nm @inner 140mm |
| Thickness Uniformity | Better than ±3% @inner 140mm |
| Mole fraction x Tolerance | Within ±0.03 |
| Mole fraction x Uniformity | ≤0.03 |
More samples of N-GaAs Substrate
*If you have the customized requirements, please feel free to contact us.
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FAQ
1. Q: What about the cost N-GaAs substrates compared with other substrates ?
A: N-GaAs substrates tend to be more expensive than silicon substrates and some other semiconductor materials.
2. Q: What about the future prospect of N-GaAs substrates?
A: The future prospects of N-GaAs substrates are quite promising.
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