Products

Home > Products > SiC Substrate > Silicon Carbide Substrate 4'' Sic 3C-N Diameter 100mm Conductive Type Zero MPD Production Grade

Catagories

Lab Wrapper

(19)

Contacts

Contacts: Mr. Wang

TEL:: 86-1580-1942596

Contact Now

Mail Us

Silicon Carbide Substrate 4'' Sic 3C-N Diameter 100mm Conductive Type Zero MPD Production Grade

Name: Silicon Carbide Substrate 4'' Sic 3C-N Diameter 100mm Conductive Type Zero MPD Production Grade
Brand: ZMSH
SKU: 3C-N SiC
Rating: 5 (119 reviews)

Product Details

Place of Origin: CHINA

Brand Name: ZMSH

Certification: rohs

Model Number: 3C-N SiC

Payment & Shipping Terms

Minimum Order Quantity: 10pc

Price: by case

Packaging Details: customzied plastic box

Delivery Time: in 30days

Payment Terms: T/T

Supply Ability: 1000pc/month

Get Best Price

Product Details

Product Description

Highlight: 
                                                                                                                                                                                                                                                                                4'' Silicon Carbide Substrate, Conductive Type Silicon Carbide Substrate, 3C-N Silicon Carbide Substrate
                              

Size:	4Inch	Dielectric Constant:	9.7
Surface Hardness:	HV0.3>2500	Density:	3.21 G/cm3
Thermal Expansion Coefficient:	4.5 X 10-6/K	Breakdown Voltage:	5.5 MV/cm
Applications:	Communications, Radar Systems

Size:	4Inch
Dielectric Constant:	9.7
Surface Hardness:	HV0.3>2500
Density:	3.21 G/cm3
Thermal Expansion Coefficient:	4.5 X 10-6/K
Breakdown Voltage:	5.5 MV/cm
Applications:	Communications, Radar Systems

Silicon Carbide Substrate 4'' Sic 3C-N Diameter 100mm Conductive Type Zero MPD Production Grade

Product Description:

Silicon Carbide Substrate 4" Sic 3C-N Diameter 100mm Conductive Type Zero MPD Production Grade

3C-SiC (Cubic Silicon Carbide) is a wide bandgap semiconductor material with good electrical and thermal properties, especially suitable for high-frequency, high-power and electronic device applications. N-type doping is usually achieved by introducing elements such as nitrogen (N) and phosphorus (P), which makes the material electronegative and suitable for a variety of electronic device designs. The bandgap is approximately 3.0 eV, making it suitable for high temperature and high voltage applications. N-type doping still maintains high electron mobility, which enhances the performance of the device. Excellent thermal conductivity helps to improve the heat dissipation ability of power devices. It has good mechanical strength and is suitable for use in harsh environments. It has good resistance to a wide range of chemicals and is suitable for industrial applications. In power electronics, it is used in high-efficiency power converters and drives, suitable for electric vehicles and renewable energy systems.

Features:

· Wide bandgap: Bandgap of approximately 3.0 eV for high temperature and high voltage applications.

· High Electron Mobility: N-type doping provides good electron mobility and enhances the overall performance of the device.

· Excellent thermal conductivity: It has excellent thermal conductivity and effectively improves heat dissipation performance, suitable for high-power applications.

· Good mechanical strength: It has high toughness and compressive strength, and is suitable for use in harsh environments.

· Chemical resistance: Good resistance to a wide range of chemicals, enhancing the stability of the material.

· Adjustable electrical characteristics: By adjusting the doping concentration, different electrical properties can be achieved to meet the needs of a variety of applications.

Technical Parameters:

Silicon Carbide Substrate 4'' Sic 3C-N Diameter 100mm Conductive Type Zero MPD Production Grade 4

Applications:

1. Power electronics: for high-efficiency power converters, inverters and drives, widely used in electric vehicles and renewable energy systems.

2. RF & Microwave Equipment: RF amplifiers, microwave equipment, especially suitable for communication and radar systems.

3. Optoelectronics: It can be used as a building block for LEDs and light detectors, especially in blue and ultraviolet applications.

4. Sensors: Applied to a wide range of sensors in high-temperature and high-power environments, providing reliable performance.

5. Wireless Charging and Battery Management: Used in wireless charging systems and battery management devices to improve efficiency and performance.

6. Industrial electrical equipment: Used in industrial automation and control systems to improve energy efficiency and system stability.

Customization:

Our SiC substrate is available in the 3C-N type and is RoHS certified. The minimum order quantity is 10pc and the price is by case. The packaging details are customized plastic boxes. The delivery time is within 30 days and we accept T/T payment terms. Our supply ability is 1000pc/month. The SiC substrate size is 2 inch. Place of origin is China.

Our services:

1. Factory direct manufacture and sell.

2. Fast, accurate quotes.

3. Reply to you within 24 working hours.

4. ODM: Customized design is avaliable.

5. Speed and precious delivery.

FAQ:

Q: Can I customize the products based on my need?
A: Yes, we can customize the material, specifications and shape, size based on your needs.

Q: What's the way of shipping and cost?
A:(1) We accept DHL, Fedex, EMS etc.
(2) If you have your own express account, it's great.If not,we could help you ship them.
Freight is in accordance with the actual settlement.

Tags:

Gallium Nitride Wafer

Sapphire Wafer

SiC Substrate

Sapphire Optical Windows

Indium Phosphide Wafer

Sapphire Parts

Synthetic Ruby

Sapphire Cover Glass

LiNbO3 Wafer

GaAs Wafer

Synthetic Sapphire Rod

IC Silicon Wafer

Fused Quartz Plate

Ceramic Substrate

Synthetic Gem Crystal

Lab Wrapper

Silicon Carbide Substrate 4'' Sic 3C-N Diameter 100mm Conductive Type Zero MPD Production Grade

4'' Silicon Carbide Substrate

Conductive Type Silicon Carbide Substrate

3C-N Silicon Carbide Substrate

Product Description:

Silicon Carbide Substrate 4" Sic 3C-N Diameter 100mm Conductive Type Zero MPD Production Grade

Features:

Technical Parameters:

Applications:

Customization:

Our services:

1. Factory direct manufacture and sell.

2. Fast, accurate quotes.

3. Reply to you within 24 working hours.

4. ODM: Customized design is avaliable.

5. Speed and precious delivery.

FAQ:

Q: Can I customize the products based on my need? A: Yes, we can customize the material, specifications and shape, size based on your needs.

Q: What's the way of shipping and cost? A:(1) We accept DHL, Fedex, EMS etc. (2) If you have your own express account, it's great.If not,we could help you ship them. Freight is in accordance with the actual settlement.

sic wafer,

sic substrate,

Gallium Nitride Wafer

Sapphire Wafer

SiC Substrate

Sapphire Optical Windows

Indium Phosphide Wafer

Sapphire Parts

Synthetic Ruby

Q: Can I customize the products based on my need?
A: Yes, we can customize the material, specifications and shape, size based on your needs.

Q: What's the way of shipping and cost?
A:(1) We accept DHL, Fedex, EMS etc.
(2) If you have your own express account, it's great.If not,we could help you ship them.
Freight is in accordance with the actual settlement.