Product Details
Place of Origin: CHINA
Brand Name: ZMSH
Certification: rohs
Model Number: Patterned Sapphire Substrate (PSS)
Payment & Shipping Terms
Minimum Order Quantity: 25
Price: by case
Packaging Details: Single wafer package in 100-grade cleaning room
Delivery Time: 2-4weeks
Payment Terms: T/T
Item:: |
Patterned Sapphire Substrate |
Size:: |
2inch, 4inch, 6inch |
Front Surface Finish:: |
Patterned |
Back Surface Finish:: |
SSP:Fine-ground,Ra=0.8-1.2um; DSP:Epi-polished,Ra<0.3nm |
Laser Mark:: |
Back Side |
Edge Exclusion:: |
≤2 Mm |
Customization:: |
Sapphire PSS Of Various Orientations; Nanometer Patterned Sapphire Substrate(NPSS) |
Application:: |
Light Emitting Diodes (LEDs) |
Item:: |
Patterned Sapphire Substrate |
Size:: |
2inch, 4inch, 6inch |
Front Surface Finish:: |
Patterned |
Back Surface Finish:: |
SSP:Fine-ground,Ra=0.8-1.2um; DSP:Epi-polished,Ra<0.3nm |
Laser Mark:: |
Back Side |
Edge Exclusion:: |
≤2 Mm |
Customization:: |
Sapphire PSS Of Various Orientations; Nanometer Patterned Sapphire Substrate(NPSS) |
Application:: |
Light Emitting Diodes (LEDs) |
Patterned sapphire substrate (PSS) is a miniature patterned sapphire substrate. It has been widely used in high-power gallium nitride-based light-emitting diodes (leds), which are the most promising alternative light sources for general lighting. With the breakthrough of pattern-sapphire substrate technology, the efficiency of high-brightness gallium nitride based leds has reached a record high of 150 lm/W. The efficiency improvement of gallium nitride based leds using patterned sapphire substrate technology is usually attributed to the improvement of light extraction efficiency and internal quantum efficiency. The regular pattern produced on the sapphire substrate counterbalances the effect of total internal reflection at the gallium nitride/sapphire interface. Moreover, the internal quantum efficiency is improved due to the possible lateral growth of GaN defilm on the pattern-based sapphire substrate, which reduces thread dislocation.
In summary, GaN epitaxial layers grown on PSS produce epitaxial transverse defects and fewer gap defects between GaN and sapphire substrate. In addition, the lattice parameters of PSS are better matched to GaN, and the epitaxial growth of GaN on PSS results in less dislocation density and refractive index mismatch, thus improving the epitaxial quality.
Patterned sapphire substrate(PSS) is a process of making some specific micrometer pattern like Dome,Cone or Pyramid-shaped on the sapphire substrate.Uneven patterns on sapphire substrates can generate light scattering or refraction,thereby improving the luminous efficiency.
Crystal Structure |
Hexagonal |
Lattice Constant(nm) |
a=4.76Å c=12.99Å |
Density(g/cm3) |
3.98 |
Melting point(℃) |
2040 |
Mohs Hardness(mohs) |
9 |
Dielectric Constant |
9.3(A plane) 11.5(C plane) |
Thermal Conductivity(W/cm.K) |
0.46 |
Thermal Expansion |
6.7*10-6/k(C plane) 5.0*10-6/k(A plane) |
Refractive Index |
1.762-1.777 |
Transmission |
Test sample:Sapphire:D76.2*4mm |
UV:200~380nm 74%~84% |
|
Visible light:380~760nm 85% |
|
Infrared:760~1000nm 85% |
|
Far-Infrared:>1000nm 80%~100% |
Item |
Patterned Sapphire Substrate(2~6inch) |
||
Diameter |
50.8 ± 0.1 mm |
100.0 ± 0.2 mm |
150.0 ± 0.3 mm |
Thickness |
430 ± 25μm |
650 ± 25μm |
1000 ± 25μm |
Surface Orientation |
C-plane (0001) off-angle toward M-axis (10-10) 0.2 ± 0.1° |
||
C-plane (0001) off-angle toward A-axis (11-20) 0 ± 0.1° |
|||
Primary Flat Orientation |
A-Plane (11-20) ± 1.0° |
||
Primary Flat Length |
16.0 ± 1.0 mm |
30.0 ± 1.0 mm |
47.5 ± 2.0 mm |
R-Plane |
9-o'clock |
||
Front Surface Finish |
Patterned |
||
Back Surface Finish |
SSP:Fine-ground,Ra=0.8-1.2um; DSP:Epi-polished,Ra<0.3nm |
||
Laser Mark |
Back side |
||
TTV |
≤8μm |
≤10μm |
≤20μm |
BOW |
≤10μm |
≤15μm |
≤25μm |
WARP |
≤12μm |
≤20μm |
≤30μm |
Edge Exclusion |
≤2 mm |
||
Pattern Specification |
Shape Structure |
Dome, Cone,Pyramid |
|
Pattern Height |
1.6~1.8μm |
||
Pattern Diameter |
2.75~2.85μm |
||
Pattern Space |
0.1~0.3μm |
Customization specifications:
* Nanometer patterned sapphire substrate(NPSS).
* Sapphire PSS of various orientations.
1. Improved LED light extraction efficiency: PSS improves LED light extraction efficiency by reducing internal reflection and increasing light output through surface patterns.
2. Improved crystal quality: Patterned surfaces help reduce defects in epitaxial growth and improve crystal quality.
3. Enhanced heat dissipation performance: The patterned structure increases the heat dissipation area and helps to reduce the operating temperature of the LED.
4. Lower costs: Higher light efficiency and yield reduce material waste and lower production costs.
1. Q: What is the difference between PSS and flat sapphire substrates?
A: PSS: Has a patterned surface that enhances light extraction and improves crystal growth quality.
Flat Sapphire Substrates: Have a smooth surface, which results in lower light extraction efficiency and higher internal reflection.
2. Q: What are the common patterns used in PSS?
A: Pyramid Patterns: Efficient for light extraction and epitaxial growth.
Cone Patterns: Similar to pyramids but with rounded tips.
Micro-Lens Arrays: Optimized for maximizing light output.
Hexagonal Patterns: Provide uniform light distribution and improved crystal growth.
3. Q: Why is sapphire used as a substrate for PSS?
A: High Transparency: Ideal for light-emitting applications.
Chemical Stability: Resistant to harsh chemical environments.
Thermal Stability: Can withstand high temperatures during LED manufacturing.
Cost-Effectiveness: Relatively affordable compared to other substrates like silicon carbide (SiC).
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