Product Details
Place of Origin: CHINA
Brand Name: ZMSH
Certification: rohs
Model Number: Through Glass Via (TGV)
Payment & Shipping Terms
Price: by case
Payment Terms: T/T
Material:: |
Sapphire |
Size:: |
Customized |
Diameter:: |
Customizable |
Thickness:: |
<1.1 Mm |
Positional Accuracy:: |
±3 µm |
Super Smooth Sidewalls:: |
RA < 0,08 µm |
Material:: |
Sapphire |
Size:: |
Customized |
Diameter:: |
Customizable |
Thickness:: |
<1.1 Mm |
Positional Accuracy:: |
±3 µm |
Super Smooth Sidewalls:: |
RA < 0,08 µm |
TGV sapphire wafers with laser-drilled micro-vias combine sapphire's superior properties (Mohs 9 hardness, 2040°C melting point) with precision interconnect technology. Available in 2-6" diameters (expandable to 8"), these wafers feature 10-500μm vias (aspect ratios to 20:1) with <2° taper angles and Ra<0.5μm surface finish, supporting densities of 10-10,000 vias/cm². Ideal for 5G RF filters, GaN power devices, and MEMS applications, they offer batch processing of 50 wafers/run while meeting SEMI M78 standards, with optional metallization (Cu/Ni/Au) for enhanced functionality.
The advanced laser drilling process achieves 200-5,000 holes/sec throughput while maintaining sapphire's chemical inertness, enabling reliable microfluidic channels and hermetic optoelectronic packaging. Custom solutions include <5μm micro-vias and specialized surface treatments for demanding thermal/electrical performance requirements in high-frequency and high-power applications.
Specification | Value |
Glass Thickness | <1.1 mm |
Wafer Sizes | All standard up to 200 mm |
Minimum Microhole Diameter | 10 µm |
Identical Hole Diameter | 99% |
Positional Accuracy | ±3 µm |
Chipping | None |
Super Smooth Sidewalls | RA < 0.08 µm |
Hole Types | Through Via (True circle or Ellipse), Blind Via (True circle or Ellipse) |
Hole Shape | Hourglass |
Option | Singulation from hole-processed large-sized glass |
- High Mechanical Strength: Mohs hardness of 9, scratch-resistant, and corrosion-resistant.
- Superior Thermal Stability: Withstands extreme temperatures (>2000°C) and exhibits low thermal expansion.
- Precision Through-Holes: Laser/photolithography enables micron-scale apertures with high aspect ratios.
- Optical Performance: Broadband transparency (80%+ @400-5000nm) from UV to IR wavelengths.
- Dielectric Properties: Excellent insulation (resistivity >10¹⁴ Ω·cm).
- Semiconductor Packaging: Heterogeneous integration substrate for 3D ICs and MEMS sensors (e.g., pressure/inertial sensors).
- Optoelectronic Devices: Transparent interposer for Micro-LEDs and vertical-cavity surface-emitting lasers (VCSELs).
- RF Components: 5G/mmWave antenna packaging (low dielectric loss).
- Biochips: Chemically inert transparent layer for microfluidic chips.
- Extreme-Environment Sensors: Aerospace and deep-well sensor windows.
Our advanced TGV wafers are engineered to enable high-performance metallization of microvias, ensuring optimal conductivity and structural integrity for cutting-edge applications.
We specialize in manufacturing TGV wafers with bespoke dimensions and microvia designs, tailored to seamlessly integrate with your preferred metallization processes—whether electroless plating, sputtering, or electroplating.
Our TGV glass wafers are precision-fabricated to deliver exceptional surface quality, enabling direct integration into your production workflow with minimal post-processing. High-density microvia arrays are uniformly distributed to meet stringent industry standards.
From concept to commercialization, we provide agile prototyping and high-volume production services to support your unique design requirements. Our flexible manufacturing capabilities ensure fast turnaround without compromising precision or reliability.
1. Q: What are the advantages of sapphire TGV wafers over traditional glass substrates?
A: Sapphire TGV wafers offer superior mechanical strength, higher temperature resistance (>2000°C), and better chemical stability compared to standard glass substrates.
2. Q: What applications are sapphire TGV wafers best suited for?
A: They are ideal for advanced semiconductor packaging, high-power LED devices, and RF components requiring extreme durability and precision microstructures.
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