| Brand Name: | ZMSH |
| Model Number: | Through Glass Via (TGV) |
| Price: | by case |
| Payment Terms: | T/T |
TGV sapphire wafers with laser-drilled micro-vias combine sapphire's superior properties (Mohs 9 hardness, 2040°C melting point) with precision interconnect technology. Available in 2-6" diameters (expandable to 8"), these wafers feature 10-500μm vias (aspect ratios to 20:1) with <2° taper angles and Ra<0.5μm surface finish, supporting densities of 10-10,000 vias/cm². Ideal for 5G RF filters, GaN power devices, and MEMS applications, they offer batch processing of 50 wafers/run while meeting SEMI M78 standards, with optional metallization (Cu/Ni/Au) for enhanced functionality.
The advanced laser drilling process achieves 200-5,000 holes/sec throughput while maintaining sapphire's chemical inertness, enabling reliable microfluidic channels and hermetic optoelectronic packaging. Custom solutions include <5μm micro-vias and specialized surface treatments for demanding thermal/electrical performance requirements in high-frequency and high-power applications.
| Specification | Value |
| Glass Thickness | <1.1 mm |
| Wafer Sizes | All standard up to 200 mm |
| Minimum Microhole Diameter | 10 µm |
| Identical Hole Diameter | 99% |
| Positional Accuracy | ±3 µm |
| Chipping | None |
| Super Smooth Sidewalls | RA < 0.08 µm |
| Hole Types | Through Via (True circle or Ellipse), Blind Via (True circle or Ellipse) |
| Hole Shape | Hourglass |
| Option | Singulation from hole-processed large-sized glass |
- High Mechanical Strength: Mohs hardness of 9, scratch-resistant, and corrosion-resistant.
- Superior Thermal Stability: Withstands extreme temperatures (>2000°C) and exhibits low thermal expansion.
- Precision Through-Holes: Laser/photolithography enables micron-scale apertures with high aspect ratios.
- Optical Performance: Broadband transparency (80%+ @400-5000nm) from UV to IR wavelengths.
- Dielectric Properties: Excellent insulation (resistivity >10¹⁴ Ω·cm).
- Semiconductor Packaging: Heterogeneous integration substrate for 3D ICs and MEMS sensors (e.g., pressure/inertial sensors).
- Optoelectronic Devices: Transparent interposer for Micro-LEDs and vertical-cavity surface-emitting lasers (VCSELs).
- RF Components: 5G/mmWave antenna packaging (low dielectric loss).
- Biochips: Chemically inert transparent layer for microfluidic chips.
- Extreme-Environment Sensors: Aerospace and deep-well sensor windows.
Our advanced TGV wafers are engineered to enable high-performance metallization of microvias, ensuring optimal conductivity and structural integrity for cutting-edge applications.
We specialize in manufacturing TGV wafers with bespoke dimensions and microvia designs, tailored to seamlessly integrate with your preferred metallization processes—whether electroless plating, sputtering, or electroplating.
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Our TGV glass wafers are precision-fabricated to deliver exceptional surface quality, enabling direct integration into your production workflow with minimal post-processing. High-density microvia arrays are uniformly distributed to meet stringent industry standards.
From concept to commercialization, we provide agile prototyping and high-volume production services to support your unique design requirements. Our flexible manufacturing capabilities ensure fast turnaround without compromising precision or reliability.
1. Q: What are the advantages of sapphire TGV wafers over traditional glass substrates?
A: Sapphire TGV wafers offer superior mechanical strength, higher temperature resistance (>2000°C), and better chemical stability compared to standard glass substrates.
2. Q: What applications are sapphire TGV wafers best suited for?
A: They are ideal for advanced semiconductor packaging, high-power LED devices, and RF components requiring extreme durability and precision microstructures.
Tag: #TGV, #TGV Sapphire Wafer Perforated Glass Substrate, #Customized, #Through Glass Via (TGV), #BF33, #JGS1, #JGS2, #Sapphire