Precision Sapphire Lift Pins Single Crystal Al₂O₃ Wear Resistant for High-Accuracy Wafer Positioning
Sapphire lift pins are precision mechanical components manufactured from high-purity single-crystal sapphire, engineered for high-precision positioning, high-temperature resistance, and wear-intensive applications. ZMSH provides full-parameter customization services (including diameter, length, surface roughness, and crystallographic orientation optimization), supporting rapid small-batch delivery to meet the extreme performance demands of semiconductor, medical, aerospace, and industrial sectors.
Key Characteristics
1. Ultra-high Mechanical Strength: With a compressive strength exceeding 300,000 psi, these pins withstand high-frequency lifting loads (e.g., 12-inch wafer handling systems in semiconductor fabrication).
2. High-Temperature Stability: Operate continuously at 1,500°C and tolerate short-term exposure up to 2,050°C (ideal for laser welding or combustion chamber positioning).
3. Low Friction Coefficient: Post-polishing friction coefficients <0.15 minimize energy loss during precision motion (e.g., lithography stage adjustments).
4. Chemical Inertness: Resistant to strong acids, alkalis, and organic solvents, suitable for cleanrooms and semiconductor etching environments.
Technical Parameters
| Chemical composition |
Monocrystalline Al2O3 |
| Hardness |
9Mohs |
| Optic nature |
Uniaxial |
| Refractive index |
1.762-1.770 |
| Birefringence |
0.008-0.010 |
| Dispersion |
Low, 0.018 |
| Lustre |
Vitreous |
| Pleochroism |
Moderate to Strong |
| Diameter |
0.4mm-30mm |
| Diameter tolerance |
0.004mm-0.05mm |
| length |
2mm-150mm |
| length tolerance |
0.03mm-0.25mm |
| Surface quality |
40/20 |
| Surface roundness |
RZ0.05 |
| Custom shape |
both ends flat, one end redius, both end redius,
saddle pins and special shapes |
Primary Applications
(1)Semiconductor Manufacturing
· Wafer Handling Systems: Achieve ±1μm positioning accuracy in 12-inch wafer fabs, enduring 200 cycles/hour.
· Photolithography Stage Calibration: Compensate for silicon wafer thermal expansion (thermal expansion coefficient: 5.3×10⁻⁷/°C) via nanometer-scale adjustments.
(2)Medical Devices
· Surgical Robot Catheters: Ultra-thin-walled tubes (<50μm) enable minimally invasive vascular interventions without tissue damage.
· Radiotherapy Equipment Calibration: Adjust radiation focal points with ±0.01mm precision in proton therapy systems.
(3)Aerospace and Defense
· Rocket Vector Control: Deployed in attitude adjustment mechanisms, enduring -196°C to 1,200°C thermal cycling.
· Satellite Optical Systems: Protect exterior payloads during deep-space missions, maintaining functionality under vacuum and radiation.
(4)Industrial and Research
· Electron Microscopy Stages: Enable ±5nm positioning in 10⁻¹⁰ mbar vacuum environments.
· Nuclear Fusion Reactors: Withstand neutron irradiation (>10¹⁵ n/cm²) and plasma erosion for >100,000 cycles.
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