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High Purity SiC End Effector for Wafer Handling Corrosion Heat Resistant Fork for Semiconductor Processing

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High Purity SiC End Effector for Wafer Handling Corrosion Heat Resistant Fork for Semiconductor Processing

High Purity SiC End Effector for Wafer Handling Corrosion Heat Resistant Fork for Semiconductor Processing
High Purity SiC End Effector for Wafer Handling Corrosion Heat Resistant Fork for Semiconductor Processing High Purity SiC End Effector for Wafer Handling Corrosion Heat Resistant Fork for Semiconductor Processing High Purity SiC End Effector for Wafer Handling Corrosion Heat Resistant Fork for Semiconductor Processing High Purity SiC End Effector for Wafer Handling Corrosion Heat Resistant Fork for Semiconductor Processing High Purity SiC End Effector for Wafer Handling Corrosion Heat Resistant Fork for Semiconductor Processing High Purity SiC End Effector for Wafer Handling Corrosion Heat Resistant Fork for Semiconductor Processing

Large Image :  High Purity SiC End Effector for Wafer Handling Corrosion Heat Resistant Fork for Semiconductor Processing

Product Details:
Place of Origin: China
Brand Name: ZMSH
Certification: rohs
Payment & Shipping Terms:
Minimum Order Quantity: 5
Price: 100
Packaging Details: Foam Cushion + Carton box
Delivery Time: 3-4 week
Payment Terms: T/T
Supply Ability: 1000per month
Detailed Product Description
Surface Resistance: 10⁴~10⁹Ω Size: Customizable (for 4–12 Inch Wafers)
Purity: 99.9% Density: D=8.91(g/cm3)
Diameter: 25-500 Um Application: Package Test, Chip Sorting
Mechanical Strength: Flexural Strength > 400 MPa Resistivity: 0.1~60ohm.cm
Thermal Resistance: 1600 ℃ Chemical Resistance: Resistant To Acids, Bases, And Plasma
Highlight:

Semiconductor Processing SiC End Effector

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Wafer Handling SiC End Effector

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Corrosion Resistant SiC End Effector

 

Product Description:

 

Our SiC end effectors are designed for ultra-clean wafer handling in semiconductor manufacturing environments. Manufactured using high-purity silicon carbide, these forks provide exceptional thermal resistance, chemical stability, and mechanical strength—making them ideal for use in harsh process chambers such as etching, deposition, and high-temperature transport systems.

The dense, fine-grain SiC body ensures low particle generation, excellent dimensional stability, and compatibility with 200mm to 300mm wafers. Custom designs are available for specific robotic arms and wafer carriers.

 


 

Key Features:

  • Material: High-purity Silicon Carbide (SiC)

 

  • Excellent thermal resistance (up to 1600°C)

 

  • Superior chemical and plasma corrosion resistance

 

  • High mechanical strength and rigidity

 

  • Low particle generation for cleanroom use

 

  • Available for 4", 6", 8", and 12" wafer handling

 

  • Custom shapes and slots for robotic compatibility

 


 

 

Product Specifications:

 

Parameter Specification
Material High-purity SiC (≥99%)
Size Customizable (for 4–12 inch wafers)
Surface Finish Polished or matte per requirement
Thermal Resistance Up to 1600°C
Chemical Resistance Resistant to acids, bases, and plasma
Mechanical Strength Flexural strength > 400 MPa
Cleanroom Grade Suitable for Class 1–100

 

 

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Keywords / Tags:
 

#SiCEndEffector #WaferHandling #SiCFork #SemiconductorEquipment #WaferTransfer #HighPuritySiC #SiCWaferCarrier #SemiconductorAutomation #VacuumCompatible #SiCComponent #EtchingToolPart #RoboticWaferHandling

Contact Details
SHANGHAI FAMOUS TRADE CO.,LTD

Contact Person: Mr. Wang

Tel: +8615801942596

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