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Diamond Wire Triple-Station Single-Wire Cutting Machine for SiC / Sapphire / Silicon Processing

Name: Diamond Wire Triple-Station Single-Wire Cutting Machine for SiC / Sapphire / Silicon Processing
Brand: SHANGHAI FAMOUS TRADE CO.,LTD
SKU: Diamond Wire Triple-Station Single-Wire Cutting Machine
Price: 50,002.00 USD
Availability: InStock

Brand Name:	ZMSH
Model Number:	Diamond Wire Triple-Station Single-Wire Cutting Machine
MOQ:	3
Price:	by case
Delivery Time:	3-6 months
Payment Terms:	T/T

Detail Information

Product Description

Detail Information

Place of Origin:

CHINA

Certification:

rohs

Model:

Three Station Diamond Single Line Cutting Machine

Wire Running Speed:

1000 (MIX) M/min

Diamond Wire Diameter:

0.25-0.48mm

Cutting Accuracy:

0.01mm

Water Tank:

150L

Swing Angle:

±10°

Workstation:

Packaging Details:

package in 100-grade cleaning room

Supply Ability:

1000pcs per month

Highlight:

Sapphire Cutting Machine

Triple-Station Cutting Machine

Sapphire Triple-Station Cutting Machine

Product Description

Diamond Wire Triple-Station Single-Wire Cutting Machine Introduction

Diamond Wire Triple-Station Single-Wire Cutting Machine for SiC/Sapphire/Silicon Processing

The Diamond Wire Triple-Station Single-Wire Cutting Machine is a fully automated precision machining system specifically designed for processing highly complex hard and brittle materials. Featuring a modular design, it integrates three independent workstations for rough cutting, precision finishing, and polishing. Equipped with a high-rigidity gantry structure and nano-grade linear motor drive system (repeat positioning accuracy ±0.5μm), the machine utilizes a single diamond wire (diameter 0.1-0.3mm) to sequentially complete multi-process machining, enabling one-stop precision manufacturing from blank to finished product. It is particularly suitable for high-end process scenarios requiring special-shaped cutting, ultra-thin wafer processing, and low surface damage, comprehensively supporting precision machining needs for semiconductor and optoelectronic materials including silicon, silicon carbide (SiC), sapphire, and quartz.

Diamond Wire Triple-Station Single-Wire Cutting Machine Technical Specifications

Model	Three station diamond single line cutting machine
Maximum workpiece size	600*600mm
Wire running speed	1000 (MIX) m/min
Diamond wire diameter	0.25-0.48mm
Line storage capacity of supply wheel	20km
Cutting thickness range	0-600mm
Cutting accuracy	0.01mm
Vertical lifting stroke of workstation	800mm
Cutting method	The material is stationary, and the diamond wire sways and descends
Cutting feed speed	0.01-10mm/min (According to the material and thickness)
Water tank	150L
Cutting fluid	Anti rust high-efficiency cutting fluid
Swing angle	±10°
Swing speed	25°/s
Maximum cutting tension	88.0N (Set minimum unit0.1n)
Cutting depth	200~600mm
Make corresponding connecting plates according to the customer's cutting range	-
Workstation	3
Power supply	Three phase five wire AC380V/50Hz
Total power of machine tool	≤32kw
Main motor	1*2kw
Wiring motor	1*2kw
Workbench swing motor	0.4*6kw
Tension control motor	4.4*2kw
Wire release and collection motor	5.5*2kw
External dimensions (excluding rocker arm box)	485921902184mm
External dimensions (including rocker arm box)	485921902184mm
Machine weight	3600ka

Diamond Wire Triple-Station Single-Wire Cutting Machine Working Principle

Diamond Wire Triple-Station Single-Wire Cutting Machine for SiC / Sapphire / Silicon Processing 0

1. Three-Station Collaborative Operation:

Station A (Rough Cutting): High-speed cutting (1-2m/s) for rapid shaping, leaving 0.05mm allowance.
Station B (Precision Finishing): Low-speed precision trimming (0.5m/s) with accuracy up to ±0.01mm.
Station C (Polishing): Chemical mechanical polishing (CMP) or laser treatment achieves surface roughness Ra<0.2μm.

2. Intelligent Control System:

PLC-based synchronization ensures seamless process transitions.
Machine vision positioning (5μm accuracy) automatically calibrates cutting paths.

Diamond Wire Triple-Station Single-Wire Cutting Machine for SiC / Sapphire / Silicon Processing 1

Diamond Wire Triple-Station Single-Wire Cutting Machine Features and Compatible Materials

Feature

Description

Material Characteristics

Three-Process Integration

Reduces workpiece handling, lowering contamination rate by 90%

Silicon (ultra-thin wafers <50μm), SiC (high hardness)

High-Precision Special-Shaped Cutting

Supports complex shapes (arcs/bevels) with profile accuracy ±0.02mm

Sapphire (optical grade), quartz (low thermal expansion)

Adaptive Tension Control

Real-time wire tension adjustment (20-50N) prevents breakage

Ceramics (AlN/Al₂O₃), composite substrates

Multi-Material Compatibility

Quick parameter switching for different materials

Special crystals (LiNbO₃), CVD diamond

Diamond Wire Triple-Station Single-Wire Cutting Machine Technical Advantages

Efficiency: Three-station continuous processing reduces cycle time by 40%.
Quality: Polishing station achieves surface damage layer <10nm, improving device performance by 20%.
Flexibility: Independent station operation adapts to R&D and small-batch needs.
Intelligence: IoT data tracking with real-time monitoring of cutting force and temperature.

Diamond Wire Triple-Station Single-Wire Cutting Machine core application areas

Diamond Wire Triple-Station Single-Wire Cutting Machine for SiC / Sapphire / Silicon Processing 2

1. Semiconductor Power Device Manufacturing:

SiC MOSFET Trench Processing: Three-station collaboration first rough-cuts trench profiles, then precision-finishes sidewalls (±0.1° angle tolerance), and finally polishes to achieve trench surface roughness Ra<10nm, significantly enhancing switching performance.
Ultra-Thin IGBT Wafer Dicing: For silicon wafers <50μm thick, "descending + oscillating" composite cutting technology controls chipping to <5μm with >99.8% yield.

2. Consumer Electronics Optical Components:

3D Curved Sapphire Cover Processing: Rough-cuts basic contours, precision-finishes curved surfaces (radius R0.5mm±0.01mm), and polishes to achieve >93% transmittance for smartphone camera modules and smartwatch screens.
Micro-Prism Array Fabrication: Processes micron-level prism structures (50-200μm depth) on quartz glass, ensuring array pitch error <1μm.

3. Advanced Research & Special Engineering:

Fusion Device Window Material Processing: Special-shaped cutting of CVD diamond (0.3-1mm thickness) avoids graphitization, maintaining thermal conductivity >2000W/m·K.
Aerospace Ceramic Thermal Protection Components: Microchannel cutting (0.1mm width/1mm depth) on AlN substrates achieves channel wall roughness Ra<0.1μm, reducing fluid resistance.

Diamond Wire Triple-Station Single-Wire Cutting Machine for SiC / Sapphire / Silicon Processing 3

Diamond Wire Triple-Station Single-Wire Cutting Machine FAQ

1. Q: What are the benefits of 3-station diamond wire cutting?
A: It combines rough cutting, precision finishing, and polishing in one system, reducing processing time by 40% and improving surface quality (Ra<0.2μm).

2. Q: Which materials can be processed with this machine?
A: Hard/brittle materials like SiC, sapphire, silicon, quartz, and ceramics with ±0.01mm precision.

Tags: #Diamond Wire Triple-Station Single-Wire Cutting Machine, #SiC/Sapphire/Silicon Processing

Tags:

Gallium Nitride Wafer

Sapphire Wafer

SiC Substrate

Sapphire Optical Windows

IC Silicon Wafer

Synthetic Sapphire Rod

Fused Quartz Plate

Sapphire Parts

Synthetic Gemstone

Semiconductor Equipment

LiNbO3 Wafer

GaAs Wafer

Indium Phosphide Wafer

Ceramic Substrate

Lab Wrapper