2-Inch Zn-Doped Gallium Arsenide (GaAs) Wafer for LED & Laser Diode Applications

Product Overview

The 2-inch Zn-doped Gallium Arsenide (GaAs) wafer is a high-quality p-type semiconductor wafer manufactured using the Vertical Gradient Freeze (VGF) crystal growth method. Zinc doping provides stable and uniform p-type electrical characteristics, enabling reliable performance in LED, laser diode, optoelectronic, and microelectronic device fabrication.

As a direct bandgap III–V semiconductor, GaAs offers high carrier mobility, fast electronic response, and excellent optical efficiency. This wafer is supplied with (100) crystal orientation, controlled carrier concentration, low etch pit density, and polished surface finishes, ensuring consistent process performance and high device yield. Tight control of flatness, bow, warp, and particle contamination supports advanced wafer processing and epitaxial growth using MBE or MOCVD techniques.

With optional orientation flats, notch configurations, and backside laser marking, the 2-inch Zn-doped GaAs wafer provides flexibility for different process flows and identification requirements. Its stable electrical properties and reliable surface quality make it suitable for both research and volume production environments in optoelectronic and high-frequency device manufacturing.

Technical Specifications – 2-Inch Zn-Doped GaAs Wafer

Applications

• LED wafer processing

• Laser diode wafer fabrication

• Optoelectronic device wafers

• RF and high-frequency electronic wafers

Frequently Asked Questions

Is this GaAs wafer suitable for LED and laser diode manufacturing?
Yes. The Zn-doped p-type electrical characteristics, combined with (100) orientation and controlled carrier concentration, support stable light emission and consistent device performance in LED and laser diode manufacturing.

Can this wafer be used directly for epitaxial growth?
Yes. The wafer is supplied with polished surfaces, low particle contamination, and strict flatness control, allowing direct use in MBE or MOCVD epitaxial growth processes.

Can the wafer specifications be customized for different process requirements?
Yes. Options such as orientation flats, notch configuration, backside laser marking, surface finish, and selected electrical parameters can be adjusted upon request to meet specific equipment and process needs.

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