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Premium 3C-SiC Substrates: N-Type Production Grade Wafers for 5G & Power Electronics

Brand Name:	ZMSH
Model Number:	3C-N SiC
MOQ:	10pc
Price:	by case
Delivery Time:	in 30days
Payment Terms:	T/T

Detail Information

Product Description

Detail Information

Place of Origin:

CHINA

Certification:

rohs

Size:

2inch,4inch,6inch,5×5,10×10

Dielectric Constant:

9.7

Surface Hardness:

HV0.3>2500

Density:

3.21 G/cm3

Thermal Expansion Coefficient:

4.5 X 10-6/K

Breakdown Voltage:

5.5 MV/cm

Applications:

Communications, Radar Systems

Packaging Details:

customzied plastic box

Supply Ability:

1000pc/month

Product Description

Premium 3C-SiC Substrates: N-Type Production Grade Wafers for 5G & Power Electronics

Pioneering Third-Generation Semiconductor Solutions

Fig 1. High-Purity 3C-SiC Semiconductor Wafer

With over a decade of dedicated expertise, ZMSH stands at the forefront of advanced material R&D. We deliver highly customized semiconductor substrates—including SiC, Silicon, Sapphire, and SOI wafers. Our silicon carbide portfolio comprehensively covers 4H, 6H, and 3C polytypes, offering scalable supply chains from 2-inch research samples to 12-inch mass-production wafers.

Built for Extreme Performance:
Our N-type 3C-SiC substrates are meticulously engineered for next-generation high-frequency power components and automotive EV inverters. They dramatically outperform traditional silicon by offering extraordinary thermal stability (up to 1,600°C) and superior thermal conductivity (49 W/m·K). Manufactured to rigorous aerospace-grade international standards, these wafers guarantee unwavering reliability in the most demanding operational environments.

Substrate Core Features

1. Versatile Dimensional Scalability:

Standard Formats: Available in 2", 4", 6", and 8" diameters.
Bespoke Geometry: Custom sizing starts from 5×5 mm to client-specific layouts.

2. Ultra-Low Defect Architecture:

Microvoid densities are strictly maintained below 0.1 cm^-2.
Exceptional resistivity control ensures maximum device yield and reliability.

3. Seamless Process Compatibility:

Optimized for intense fabrication steps like high-temperature oxidation and lithography.
Superior surface flatness achieved at λ/10 @632.8 nm.

Detailed Technical Specifications

Grade	Zero MPD Production Grade (Z Grade)	Standard Production Grade (P Grade)	Dummy Grade (D Grade)
Diameter	145.5 mm – 150.0 mm
Thickness	350 μm ± 25 μm
Wafer Orientation	Off axis: 2.0°–4.0° toward [1120] ± 0.5° for 4H/6H-P, On axis: <111> ± 0.5° for 3C-N
** Micropipe Density	0 cm^-2
** Resistivity	p-type 4H/6H-P	≤ 0.1 Ω·cm		≤ 0.3 Ω·cm
** Resistivity	n-type 3C-N	≤ 0.8 mΩ·cm		≤ 1 mΩ·cm
Primary Flat Orientation	4H/6H-P	{1010} ± 5.0°
Primary Flat Orientation	3C-N	{110} ± 5.0°
Primary Flat Length	32.5 mm ± 2.0 mm
Secondary Flat Length	18.0 mm ± 2.0 mm
Secondary Flat Orientation	Silicon face up, 90° CW. from Prime flat ± 5.0°
Edge Exclusion	3 mm		6 mm
LTV / TIV / Bow / Warp	≤ 2.5 μm / ≤ 5 μm / ≤ 15 μm / ≤ 30 μm		≤ 10 μm / ≤ 15 μm / ≤ 25 μm / ≤ 40 μm
* Roughness	Polish	Ra ≤ 1 nm
* Roughness	CMP	Ra ≤ 0.2 nm		Ra ≤ 0.5 nm
Edge Cracks By High Intensity Light	None		Cum. length ≤ 10 mm, single ≤ 2 mm
* Hex Plates By High Intensity Light	Cumulative area ≤ 0.05%		Cumulative area ≤ 0.1%
* Polytype Areas By High Intensity Light	None		Cumulative area ≤ 3%
Visual Carbon Inclusions	None		Cumulative area ≤ 0.05%
# Silicon Surface Scratches By High Intensity Light	None		Cumulative length ≤ 1 × wafer diameter
Edge Chips High By Intensity Light	None permitted ≥ 0.2mm width and depth		5 allowed, ≤ 1 mm each
Silicon Surface Contamination By High Intensity	None
Packaging	Multi-wafer Cassette or Single Wafer Container

Primary Application Scenarios

1. High-Frequency RF & 5G Communications

Vital as RF device substrates for 5G Base Stations, allowing efficient mmWave signal propagation. Crucial for Advanced Radar Systems where low attenuation ensures precision targeting.

2. Electric Mobility (EVs)

Revolutionizes On-Board Chargers (OBC) by cutting energy losses by 40% in 800V architectures. Upgrades DC/DC Converters to reduce energy waste by up to 90%, significantly boosting vehicle range.

3C-SiC Substrates FAQ

Q1: What exactly is a 3C-SiC substrate?

A: 3C-SiC refers to cubic silicon carbide. It is a highly specialized semiconductor material characterized by a cubic crystalline structure. It delivers phenomenal electron mobility (1,100 cm²/V·s) and robust thermal conductivity (49 W/m·K).

Search Tags: #SiliconCarbideSubstrate #3C_N_Type_SIC #SemiconductorMaterials #3C_SiC_Substrate #ProductionGrade #5G_Communications #EV_Inverters

Tags:

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Sapphire Optical Windows

IC Silicon Wafer

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Fused Quartz Plate

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Synthetic Gemstone

Semiconductor Equipment

LiNbO3 Wafer

Indium Phosphide Wafer

Ceramic Substrate

Lab Wrapper

Gallium Nitride Wafer

GaAs Wafer

products details

Premium 3C-SiC Substrates: N-Type Production Grade Wafers for 5G & Power Electronics

Premium 3C-SiC Substrates: N-Type Production Grade Wafers for 5G & Power Electronics

Pioneering Third-Generation Semiconductor Solutions

Substrate Core Features

Detailed Technical Specifications

Primary Application Scenarios

1. High-Frequency RF & 5G Communications

2. Electric Mobility (EVs)

3C-SiC Substrates FAQ

sic wafer

sic substrate

silicon carbide substrate

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