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4H Silicon Carbide Substrate for Power Electronics, RF Devices & UV Optoelectronics

SiC Substrate
2025-11-20
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4H Silicon Carbide Substrate for Power Electronics, RF Devices & UV Optoelectronics Product Overview The 4H-SiC Substrate is a high-purity, single-crystal silicon carbide material designed for ... View More
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4H Silicon Carbide Substrate  for Power Electronics, RF Devices & UV Optoelectronics
4H Silicon Carbide Substrate for Power Electronics, RF Devices & UV Optoelectronics
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