Large-Format Laser Dicing Equipment: Core Technology for Future 8-Inch SiC Wafer Production

Silicon Carbide (SiC) represents not only a critical technology for national defense security but also a key focus for the global automotive and energy industries. As the initial processing step for SiC monocrystalline materials, wafer dicing quality fundamentally determines subsequent thinning and polishing performance. Conventional slicing processes tend to generate surface/subsurface cracks, increasing breakage rates and manufacturing costs. Therefore, controlling surface crack damage is crucial for advancing SiC device manufacturing technology.

ZMSH's wafer thinning equipment

Current SiC ingot dicing faces two major challenges:

1. High material loss rate in traditional multi-wire sawing. Due to SiC's extreme hardness and brittleness, cutting/grinding/polishing processes encounter severe warping and cracking issues. Infineon data shows traditional diamond wire sawing achieves only 50% material utilization during slicing, with total losses reaching 75% (∼250μm per wafer) after polishing.
2. Prolonged processing cycles and low throughput. International production statistics indicate 10,000 wafers require ∼273 days of continuous operation. Meeting market demand necessitates massive wire saw deployments while suffering from high surface roughness and severe pollution (slurry waste, wastewater).

To address these challenges, Prof. Xiangqian Xiu's team at Nanjing University has developed large-format laser dicing equipment that significantly reduces material loss and improves productivity. For a 20mm SiC ingot, laser technology doubles the yield compared to wire sawing. Additionally, laser-cut wafers exhibit superior geometric characteristics, enabling 200μm thickness for further yield increase.

This project's competitive advantages include:

• Completed prototype development for 4-6" semi-insulating SiC wafer dicing/thinning
• Achieved 6" conductive SiC ingot slicing
• Ongoing 8" ingot dicing verification
• Features 50% shorter processing time, higher annual throughput, and <50μm material loss per wafer

Market analysis confirms this equipment as the future core solution for 8" SiC production. Currently dependent on expensive Japanese imports with embargo risks, China's domestic demand exceeds 1,000 units with no mature local alternatives. Nanjing University's innovation thus holds significant commercial potential, with additional applications in GaN, Ga₂O₃, and diamond processing.

ZMSH specializes in providing comprehensive SiC solutions, offering 2-12 inch SiC substrates including 4H/6H-N type, 4H-semi insulating, and 4H/6H-3C polytypes with customizable thicknesses. We also supply complete SiC production equipment, from crystal growth systems to advanced wafer processing machinery including laser slicing and thinning equipment, delivering end-to-end solutions for the semiconductor industry.

ZMSH's SiC substrate 4H-N type