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Primary / Dummy Grade Indium Phosphide Wafer Thickness 350um For LD
  • Primary / Dummy Grade Indium Phosphide Wafer Thickness 350um For LD
  • Primary / Dummy Grade Indium Phosphide Wafer Thickness 350um For LD
Primary / Dummy Grade Indium Phosphide Wafer Thickness 350um For LD

Primary / Dummy Grade Indium Phosphide Wafer Thickness 350um For LD

Place of Origin CHINA
Brand Name zmkj
Model Number InP-2inch
Product Details
Materials:
InP Single Crystal
Industry:
Semiconductor Substrates，device，
Color:
Black
Type:
N-type,P-type
Size:
2inch
Thickness:
350um
High Light: 

mgo substrate

,

gap wafer

Product Description

2inch N-type P-type thickness 350um primary grade Dummy grade Indium Phosphide crystal InP substrates wafer for LD

 

Indium phosphide single crystal material is one of most important semiconductor compound, which is key raw material for laser diode of indium phosphide substrate(LD), light emitting diode(LED), photodetector in optical communication production. Those parts play information launching, transmitting, amplifying, reception function .

Indium phosphide is ideal for high-frequency devices, as HEMT, HBT and so on.Because of its great property, it is widely used in fibre-optical communication, microwave, millietric wave, anti-radiation of solar cells, heterojunction transistor, other similar advanced technology and so on. Main production methods of indium phosphide single cryatal material include LEC, improved LEC, VCZ/PC-LEC, VGF, VB and so on.

Specification

Item Diameter Type carrying concentration Mobility Resistivity MPD
S-InP 2     N      (0.8-6)X10^18 (1.5-3.5)x10^3 　 ＜500
3 ＜500
4 ＜1x10^3
Fe-InP 2/3/4     SI 　   ＞1000 ＞0.5x10^7 ＞5x10^3
Zn-InP 2/3/4     P     (0.6-6)X10^18      50-70 　 ＜1x10^3
No dope InP 2     N    ＜3x10^16 (3.5-4)x10^3 　 ＜5x10^3
　 Other
Orientation (100)/(111)±0.5° Flatness
TTV Bow Warp
＜12um ＜12um ≤15um
1st OF Flat 16±2mm 22±2mm 32.5±2.5mm
2st OF Flat 8±1mm 11±2mm 32.5±2.5mm
Surface:1sp or 2sp ,2inch 350±25um,3inch 600±25um,4inch 625±25um,or by customized
 
  Most of our production is made up of premium grade wafers. However, in every boule, some test grade wafers are available. Test wafers have the same electrical performance and geometrical specification than premium wafers but with a small local damage :
- a surface defect like a scratch or a pit or a stain on the front side,
- a crystalline imperfection like high EPD or a twin lamellae. The latter is made up of 2 parallel lines in the <110> direction. Between these 2 lines, the orientation is not (100) contrary to the whole wafer ; the distance between the 2 lines is very small (< 1mm).
Over 95 % of the whole surface is premium quality which makes them useful for calibration runs. The type of defect is indicated on a label for each wafer.
 

 

sample 

Primary / Dummy Grade Indium Phosphide Wafer Thickness 350um For LD 0

 

FAQ

Why choose us—  ZMKJ .?

  1. 5 years experience in semi wafers ＆ optics field;
  2. Professional workshop production line in our factory ;
  3. Specialized optics and wafers process knowledge;
  4. High quality control level;
  5. Small order acceptable;
  6. Customized Products as required;
  7. Experience for Cooperation for other country company.

Dealing Term

Delivery Time: 10-25 days

Shipping term: Exw factory, FOB Shanghai

Delivery term: Express service/Air freight

Payment term: T/T 100% in advance, or Deposit on order

 

Packaging & Shipping

As Optics mostly are small size, delivery we prefer to use Express.

It will be highly appreciate if you can provide Express account for delivery, thanks for supports!

Tags:

mgo substrate,

gap wafer,

inp wafer

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86-1580-1942596
Rm5-616,No.851,Dianshanhu avenue, Qingpu area，Shanghai city，CHINA
8615801942596
eric406337393
eric_wang@zmsh-materials.com
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