Semi Insulating 2 Inch 50mm N Type Dummy InP Indium Phosphide Wafer

2inch dia50.8mm n-type dummy prime grade InP indium Phosphide Wafer

4inch Semi-Insulating Indium Phosphide InP Wafer for LD Laser Diode,semiconductor wafer,3inch InP wafer,single crystal wafer​2inch 3inch 4inch InP substrates for LD application, semiconductor wafer,InP wafer,single crystal wafer

InP introduce                                                                                                          

InP single crystal

growth (modified Czochralski method) is used to pull a single  crystal through a boric oxide liquid encapsulant starting from a seed. The dopant (Fe, S, Sn or Zn)is added to the crucible along with the polycrystal. High pressure is applied inside the chamber to prevent decomposition of the Indium Phosphide.he company has developed a process to yield fully stoechiometric, high purity and low dislocation density inP single crystal. The tCZ technique improves upon the LEC method thanks to a thermal baffle technology in connection with a numerical modeling of thermal growth conditions. tCZ is a cost-effective mature technology with high quality reproducibility from boule to boule

Specification                                                                                                    

InP Wafer processing
Each ingot is cut into wafers which are lapped, polished and surface prepared for epitaxy. The overall process is detailed hereunder.
Flat specification and identification	The orientation is indicated on the wafers by two flats (long flat for orientation, small flat for identification). Usually the E.J. standard (European-Japanese) is used. The alternate flat configuration (U.S.) is mostly used for Ø 4" wafers.
Orientation of the boule	Either exact (100) or misoriented wafers are offered.
Accuracy of the orientation of OF	In response to the needs of the optoelectronic industry, we offers wafers with excellent accuracy of the OF orientation : < 0.02 degrees. This feature is an important benefit to customers making edge-emitting lasers and also to manufacturers who cleave to separate dies – allowing their designers to reduce the “real-estate” wasted in the streets.
Edge profile	There are two common specs : chemical edge processing or mechanical edge processing (with an edge grinder).
Polishing	Wafers are polished by means of a chemical-mechanical process resulting in a flat, damage-free surface. we provides both double-side polished and single-side polished (with lapped and etched back side) wafers.
Final surface preparation and packaging	Wafers go through many chemical steps to remove the oxide produced during polishing and to create a clean surface with stable and uniform oxide layer that is ready for epitaxial growth - epiready surface and that reduces trace elements to extremely low levels . After final inspection, the wafers are packaged in a way that maintains the surface cleanliness. Specific instructions for oxide removal are available for all types of epitaxial technologies (MOCVD, MBE).

Package ＆ delivery  

FAQ:

Q: What's your MOQ and delivery time?

A: (1) For inventory, the MOQ is 5 pcs.

   (2) For customized products, the MOQ is 10-30 pcs up.

  (3) For customized products,the delivery time in 10days, custiomzed size for 2-3weeks