SHANGHAI FAMOUS TRADE CO.,LTD 86-1580-1942596 eric_wang@zmsh-materials.com
4H-N 4 Inch Silicon Nitride SiC Substrate Dummy Grade SiC Substrate For High Power Devices

4H-N 4 Inch Silicon Nitride SiC Substrate Dummy Grade SiC Substrate For High Power Devices

  • High Light

    dummy grade SiC Substrate

    ,

    4 inch SiC Substrate

    ,

    4H-N silicon nitride substrate

  • Material
    Sic Crystal
  • Industry
    Semiconductor Wafer Optical Lens
  • Application
    Semiconductor, Led, Device, Power Electronics,5G
  • Color
    Green, White
  • Type
    4H-N And 4H-Semi, Un-doped
  • Size
    6inch (2-4inch Also Available)
  • Thickness
    350um Or 500um
  • Tolerance
    ±25um
  • Grade
    Zero/ Production/Research/Dummy
  • Ttv
    <15um
  • BOW
    <20UM
  • Warp
    《30um
  • Customzied Service
    Avaiable
  • Material
    Silicon Carbide (SiC)
  • Raw Material
    China
  • Place of Origin
    China
  • Brand Name
    ZMSH
  • Model Number
    4H
  • Minimum Order Quantity
    3pcs
  • Price
    by case
  • Packaging Details
    Packaged in a class 100 clean room environment, in cassettes of single wafer containers
  • Delivery Time
    10-30days
  • Payment Terms
    T/T, Western Union
  • Supply Ability
    1000pcs/months

4H-N 4 Inch Silicon Nitride SiC Substrate Dummy Grade SiC Substrate For High Power Devices

4H-N 4H-SEMI 2inch 3inch 4inch 6Inch SiC Substrate Production grade dummy grade for High-Power Devices

H High Purity Silicon Carbide Substrates,high purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor, Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem​

 

Application areas

 

1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET

2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED

 

advantagement

• Low lattice mismatch
• High thermal conductivity
• Low power consumption
• Excellent transient characteristics
• High band gap

 

Silicon Carbide SiC crystal substrate wafer carborundum

SILICON CARBIDE MATERIAL PROPERTIES

 

Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal
Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Mohs Hardness ≈9.2 ≈9.2
Density 3.21 g/cm3 3.21 g/cm3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index @750nm

no = 2.61

ne = 2.66

no = 2.60

ne = 2.65

Dielectric Constant c~9.66 c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)

a~4.2 W/cm·K@298K

c~3.7 W/cm·K@298K

 
Thermal Conductivity (Semi-insulating)

a~4.9 W/cm·K@298K

c~3.9 W/cm·K@298K

a~4.6 W/cm·K@298K

c~3.2 W/cm·K@298K

Band-gap 3.23 eV 3.02 eV
Break-Down Electrical Field 3-5×106V/cm 3-5×106V/cm
Saturation Drift Velocity 2.0×105m/s 2.0×105m/s

 

2. substrates size of standard for 6inch 

6 inch Diameter 4H-N &Semi Silicon Carbide Substrate Specifications
SUBSTRATE PROPERTY Zero Grade Production Grade Research Grade Dummy Grade
Diameter 150 mm-0.05 mm
Surface Orientation off-axis: 4°toward <11-20> ± 0.5°   for 4H-N

On axis: <0001>±0.5°for 4H-SI 

Primary Flat Orientation

{10-10} ±5.0° for 4H-N/  Notch for 4H-Semi 

Primary Flat Length 47.5 mm ± 2.5 mm
Thickness 4H-N  STD 350±25um  or customzied 500±25um
Thickness 4H-SEMI 500±25um  STD
Wafer Edge Chamfer
Micropipe Density For 4H-N <0.5 micropipes/ cm2 ≤2micropipes/ cm2 ≤10 micropipes/ cm2

≤15 micropipes/ cm2

 

Micropipe Density For 4H-SEMI <1 micropipes/ cm2 ≤5micropipes/ cm2 ≤10 micropipes/ cm2 ≤20 micropipes/ cm2
Polytype areas by high-intensity light             None permitted ≤10% area
Resistivity for 4H-N         0.015 Ω·cm~0.028 Ω·cm  (area 75%)0.015Ω·cm~0.028 Ω·cm
Resistivity for 4H-SEMI

           ≥1E9 Ω·cm 

 
LTV/TTV/BOW/WARP

           ≤3 μm/≤6 μm/≤30 μm/≤40 μm

5 μm/≤15 μm/≤40 μm/≤60 μm

Hex Plates By High Intensity Ligh

Cumulative area ≤0.05%

Cumulative area ≤0.1%

Silicon Surface Contamination by High Intensity Light

               NONE

 

Visual Carbon Inclusions

 

Cumulative area ≤0.05%

Cumulative area ≤3%

Polytype Areas By High Intensity Light

 

 NONE 

Cumulative area≤3%

Delivery Sample

4H-N 4 Inch Silicon Nitride SiC Substrate Dummy Grade SiC Substrate For High Power Devices 04H-N 4 Inch Silicon Nitride SiC Substrate Dummy Grade SiC Substrate For High Power Devices 1

4H-N 4 Inch Silicon Nitride SiC Substrate Dummy Grade SiC Substrate For High Power Devices 24H-N 4 Inch Silicon Nitride SiC Substrate Dummy Grade SiC Substrate For High Power Devices 3

 

The Other Services we can provide

 1.Customized thickness wire-cut     2. customized size chip slice        3. cuotomized  shape lens 

 

4H-N 4 Inch Silicon Nitride SiC Substrate Dummy Grade SiC Substrate For High Power Devices 44H-N 4 Inch Silicon Nitride SiC Substrate Dummy Grade SiC Substrate For High Power Devices 54H-N 4 Inch Silicon Nitride SiC Substrate Dummy Grade SiC Substrate For High Power Devices 6

 

The Other Similar Products we can provide

4H-N 4 Inch Silicon Nitride SiC Substrate Dummy Grade SiC Substrate For High Power Devices 7

 

FAQ:

Q: What's the wayof shipping and cost and pay term ?

A:(1) We accept 50% T/T In advance  and left 50% before delivery by  DHL, Fedex, EMS etc.

(2) If you have your own express account, it's great.If not,we could help you ship them.

Freight is in accordance with the actual settlement.

 

Q: What's your MOQ?

A: (1) For inventory, the MOQ is 3pcs.

(2) For customized products, the MOQ is 10pcs up.

 

Q: Can I customize the products based on my need?

A: Yes, we can customize the material, specifications and shape, size  based on your needs.

 

Q: What's the delivery time?

A: (1) For the standard products

For inventory: the delivery is 5 workdays after you place the order.

For customized products: the delivery is 2 or 3 weeks after you place the order.

(2) For the special-shaped products, the delivery is 4 workweeks after you place the order.