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P Type / N Type Ge Substrate Germanium Wafers 2inch 3inch 4inch
  • P Type / N Type Ge Substrate Germanium Wafers 2inch 3inch 4inch
  • P Type / N Type Ge Substrate Germanium Wafers 2inch 3inch 4inch
  • P Type / N Type Ge Substrate Germanium Wafers 2inch 3inch 4inch

P Type / N Type Ge Substrate Germanium Wafers 2inch 3inch 4inch

Place of Origin CHINA
Brand Name ZMSH
Certification ROHS
Model Number Ge-001
Product Details
Ge Single Crystal
Semiconductor Substrates,device,optical
N-type/ P-Type/ Un-doped
High Light: 

4 Inch Ge Substrate


N Type Germanium Wafers


P Type Germanium Wafers

Product Description

4inch 6inch Germanium Single Crystals Ge substrates Wafers,customized Ge optical lens 

2inch 3inch 4inch P-type N-type Ge substrate Germanium Wafers


Germanium substrates

Application: germanium wafer used in production of semiconductor device, infrared ray optical device, sinking material of solar cell.


Main Property Terms    
Production Method Czochralski method(CZ)  
Crystal Structure Cube  
Lattice Constant a=5.65754Å  
Density 5.323g/cm3  
Melting Point 937.4℃  
Doped material None doped or Sb doped Indium or Gallium Doped
Type /N P
Resistivity >35Ωcm0.05Ωcm 0.05~0.1Ωcm
EPD <4×103⁄cm2<4×103⁄cm2 <4×103⁄cm2
Size 10x3,10x5,10x10,15x15,,20x15,20x20,  
Thickness 0.5mm,1.0mm
Polishing Single face or double face
Orientation <100>,<110>,<111>,±0.5º
Crystal face Directional Accuracy ±0.5°
Edge Directional Accuracy 2°(Special request could be customized under 1°)
Bevel Shearing Directional Accuracy Customized by special request, process edge direction by special angle (inclination 1°-45°)of wafer
Ra: ≤5Å(5µm×5µm)
Package 100 Grade Cleaning Bag,1000Grade Super Cleaning Room



Germanium (Ge) is the preferred lens and window material for high performance infrared imaging systems in the 8–12 um wavelength band. Its high refractive index makes Ge ideal for low power imaging systems because of minimum surface curvature. Chromatic aberration is small, often eliminating the need for correction.
Germanium is most widely used for lenses and windows in IR systems operating in the 2 um - 12 um range. Its transmission is very temperature sensitive, becoming opaque near 100°C. Environment does not cause problems because Germanium is inert, mechanically rugged, and fairly hard.
Germanium is a high index material that is used to manufacture Attenuated Total reflection (ATR) prisms for spectroscopy. Its refractive index is such that germanium makes an effective natural 50% beamsplitter without the need for coatings. It is also used extensively as a substrate for production of optical filters. Germanium covers the whole of the 8-14 micron thermal band and is used in lens systems for thermal imaging. It can be AR coated with diamond producing an extremely tough front optic.
Application as window, lens, beamsplitter, ATR prism or filter in spectrometers and in thermal imaging.



Ge wafer:

Growth Method Cz
Dopant p-type: Ga  n-type: As
Wafer Shape Round (DIA: 2’’, 3’’, 4’’)
Surface Orientation * (100)±0.5°
* Other Orientations maybe available upon request
Resistivity (Ω.cm) As Required
Etch Pitch Density (cm2) ≤ 300
Thickness (µm) 500±50um
TTV [P/P] (µm) ≤ 20
WARP (µm) ≤ 20
IF** (mm) 32.5±1
**If needed by customer
Surface front side polished E/E, P/E, P/G



Products Feature For Optical Ge lens
applications: infrared optical lens Absorptivity ≤0.03
diameter(mm) : 12mm-380mm Modulus of rupture ≥75
length(mm): customized Hardness(kg/cm2): 800
resistance : 1-50Ω, ≥50Ω Density(g/cm3): 5.33
: 10% Young modulus(Gpa): 103
orientation: 111 Poisson's ratio: 0.28


off orientation:

0.5º Thermal conductivity(Wm-1k-1): 59
type: N type thermal expansivity 6.1
refractive index(10µm): 4.0026 Specific heatCal/(g.k): 0.074
  <1×10ˉ4 Melting point(℃): 937

thermal refractive index coefficient


400 Dielectric constant | permittivity:16 16


Optical windows finished products
Ge wafer for optical grade:
SL.No Material Specifications:  
1 Crystalline Form : Polycrystalline
2 Conductivity Type : n-type
3 Absorption Coefficient, at 25°C 0.035cm-1 max @10.6µm
4 Typical Resistivity : 3-40 ohm-cm
5 size dia1-150mmxthickness0.5-20mm
6 Mohs Hardness : 6.3
7 Oxygen Content : < 0.03 ppm
8 Holes and Inclusions: <0.05 mm
9 surface lapped/1sp/2sp
10 S/D 40/20,20/10,60/40,80/50,

P Type / N Type Ge Substrate Germanium Wafers 2inch 3inch 4inch 0P Type / N Type Ge Substrate Germanium Wafers 2inch 3inch 4inch 1


Q: What's your MOQ?

A: (1) For inventory, the MOQ is 3pcs.

(2) For customized products, the MOQ is 25pcs up.


Q: What's the delivery time?

A: (1) For the standard products

For inventory: the delivery is 5 workdays after you place the order.

For customized products: the delivery is 2 or 3 weeks after you place the order.

(2) For the special-shaped products, the delivery is 4 workweeks after you place the order.


Q: how is the way of shipping and cost?

A:(1) We accept DHL, Fedex, EMS etc by 100% in advance before delivery.

(2) If you have your own express account, it's great.If not,we could help you ship them.

Freight is in accordance with the actual settlement.


Q: Can I customize the products based on my need?

A: Yes, we can customize the material, specifications  for your optical components

based on your needs.


Contact Us at Any Time

Rm5-616,No.851,Dianshanhu avenue, Qingpu area,Shanghai city,CHINA
Send your inquiry directly to us