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8inch DSP 4H SiC Wafer Silicon Carbide Substrate Production Grade N Type For Experiment
  • 8inch DSP 4H SiC Wafer Silicon Carbide Substrate Production Grade N Type For Experiment
  • 8inch DSP 4H SiC Wafer Silicon Carbide Substrate Production Grade N Type For Experiment
  • 8inch DSP 4H SiC Wafer Silicon Carbide Substrate Production Grade N Type For Experiment

8inch DSP 4H SiC Wafer Silicon Carbide Substrate Production Grade N Type For Experiment

Place of Origin CHINA
Brand Name TANKBLUE
Certification CE
Model Number 4h-n
Product Details
Materials:
SIC Crystal
Type:
4h-n
Purity:
99.9995%
Resistivity:
0.015~0.028ohm.cm
Size:
2-8inch 2inch, 3inch ,4inch ,6inch ,8inch
Thickness:
350um Or Customized
MPD:
《2cm-2
Application:
For SBD, MOS Device
TTV:
《15um
Bow:
《25um
Warp:
《45um
Surface:
Si-face CMP, C-face MP
High Light: 

SiC Wafer Silicon Carbide Substrate

,

8inch DSP SiC Substrate

,

N Type Silicon Carbide Substrate

Product Description

4inch 6inch 4H-N sic wafers dummy Prime Production grade for SBD MOS Device,4H-N 4inch 6inch Sic Wafers Semiconductor High Crystal Quality For Demanding Power Electronics, 4H-N 8inch TANKBLUE Brand Semiconductor Substrate SIC Silicon Carbide Wafer For Solar Photovoltaic, 8inch Silicon Carbide Substrate Production Grade N Type 4H SiC Wafer For Research And Experiment

 

 

Wafer Dopings:

  • Undoped
  • Boron (B)
  • Gallium (Ga)
  • Arsenic (As)
  • Antimony (Sb)
  • Degenerately Doped


Wafer Types

  • P-type
  • N-type


8" Silicon Wafer Orientations

  • (100)
  • (111)
  • (110)
  • (112)
  • (531)
  • (311)
  • (211)

 

 

 

Advantages of Silicon Carbide

  • Hardness

There are numerous advantages to using silicon carbide over more traditional silicon substrates. One of the major advantages is its hardness. This gives the material many advantages, in high speed, high temperature and/or high voltage applications.

Silicon carbide wafers have high thermal conductivity, which means they can transfer heat from one point to another well. This improves its electrical conductivity and ultimately miniaturization, one of the common goals of switching to SiC wafers.

  • ​Thermal capabilities

​​High resistance to thermal shock. This means they have the ability to change temperatures rapidly without breaking or cracking. This creates a clear advantage when fabricating devices as it is another toughness characteristic that improves the lifetime and performance of silicon carbide in comparison to traditional bulk silicon.

 

Classification

  Silicon carbide SiC substrates can be divided into two categories: semi-insulated (High Purity un-dopend and V-doped 4H-SEMI) silicon carbide substrates with high resistivity (resistorivity ≥107Ω·cm), and conductive silicon carbide substrates with low resistivity (the resistivity range is 15-30mΩ·cm).

8inch DSP 4H SiC Wafer Silicon Carbide Substrate Production Grade N Type For Experiment 08inch DSP 4H SiC Wafer Silicon Carbide Substrate Production Grade N Type For Experiment 18inch DSP 4H SiC Wafer Silicon Carbide Substrate Production Grade N Type For Experiment 2

 

 

Specification 

Size:
8inch;
Diameter:
200mm±0.2;
Thickness:
500um±25;
Surface Orientation:
4 toward [11-20]±0.5°;
Notch orientation:
[1-100]±1°;
Notch depth:
1±0.25mm;
Micropipe:
<1cm2;
Hex Plates:
None Permitted;
Resistivity:
0.015~0.028Ω;
EPD:
<8000cm2;
TED:
<6000cm2
BPD:
<2000cm2
TSD:
<1000cm2
SF:
area<1%
TTV
≤15um;
Warp
≤40um;
Bow
≤25um;
Poly areas:
≤5%;

 

Related products: GaAs wafer

8inch DSP 4H SiC Wafer Silicon Carbide Substrate Production Grade N Type For Experiment 38inch DSP 4H SiC Wafer Silicon Carbide Substrate Production Grade N Type For Experiment 4

 

Industrial chain

The silicon carbide SiC industrial chain is divided into substrate material preparation, epitaxial layer growth, device manufacturing and downstream applications. Silicon carbide monocrystals are usually prepared by physical vapor transmission (PVT method), and then epitaxial sheets are generated by chemical vapor deposition (CVD method) on the substrate, and the relevant devices are finally made. In the industrial chain of SiC devices, due to the difficulty of substrate manufacturing technology, the value of the industrial chain is mainly concentrated in the upstream substrate link.

 

 

ZMSH company provides provides 100mm and 150mm SiC wafers. With its hardness (SiC is the second hardest material in the world) and stability under heat and high voltage current, this material is being widely used in several industries.

 

 

 

FAQ

 

Q: What's the wayof shipping and cost and pay term ?

A:(1) We accept 50% T/T In advance and left 50% before delivery by DHL, Fedex, EMS etc.

(2) If you have your own express account, it's great.If not,we could help you ship them.

Freight is in accordance with the actual settlement.

 

Q: What's your MOQ?

A: (1) For inventory, the MOQ is 3pcs.

(2) For customized products, the MOQ is 10pcs up.

 

Q: Can I customize the products based on my need?

A: Yes, we can customize the material, specifications and shape, size based on your needs.

 

Q: What's the delivery time?

A: (1) For the standard products

For inventory: the delivery is 5 workdays after you place the order.

For customized products: the delivery is 2 or 3 weeks after you place the order.

(2) For the special-shaped products, the delivery is 4 workweeks after you place the order.

 

 

 

Contact Us at Any Time

86-1580-1942596
Rm5-616,No.851,Dianshanhu avenue, Qingpu area,Shanghai city,CHINA
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