Send Message
Mail: TEL: 86-1580-1942596
Home > Products > SiC Substrate >
2inch Dia 50.8mm 4H-Semi SiC Substrate Research Grade Single Crystal
  • 2inch Dia 50.8mm 4H-Semi SiC Substrate Research Grade Single Crystal
  • 2inch Dia 50.8mm 4H-Semi SiC Substrate Research Grade Single Crystal
  • 2inch Dia 50.8mm 4H-Semi SiC Substrate Research Grade Single Crystal

2inch Dia 50.8mm 4H-Semi SiC Substrate Research Grade Single Crystal

Place of Origin CHINA
Brand Name SICC
Certification CE
Model Number 4h-n
Product Details
SIC Crystal
2-8inch 2inch, 3inch ,4inch ,6inch ,8inch
330um Or Customized
For SBD, MOS Device
High Light: 

Silicon Carbide Substrate 2inch


Research Grade SiC Substrate


Single Crystal SiC Substrate

Product Description

2inch Dia50.8mm 4H-Semi SiC Substrate Research Grade Single Crystal


2inch dia50mm 330μm thickness 4H N-Type SiC substrate Production Grade

2inch Silicon Carbide Wafers 6H or 4H N-type or Semi-Insulating SiC Substrates

4H-N Type / Semi Insulating SiC Substrates 2inch 3inch 6inch Silicon Carbide Wafers


what is SiC subatrate

A SiC substrate refers to a wafer made of silicon carbide (SiC), which is a wide-bandgap semiconductor material that has excellent electrical and thermal properties. SiC substrates are commonly used as a platform for the growth of epitaxial layers of SiC or other materials, which can be used to fabricate various electronic and optoelectronic devices, such as high-power transistors, Schottky diodes, UV photodetectors, and LEDs.

SiC substrates are preferred over other semiconductor materials, such as silicon, for high-power and high-temperature electronics applications due to their superior properties, including higher breakdown voltage, higher thermal conductivity, and higher maximum operating temperature. SiC devices can operate at much higher temperatures than silicon-based devices, making them suitable for use in extreme environments, such as in automotive, aerospace, and energy applications.




III-V Nitride Deposition

Optoelectronic Devices

High-Power Devices

High-Temperature Devices

High-Frequency Power Devices


Property 4H-SiC Single Crystal 6H-SiC Single Crystal
Lattice Parameters (Å)





Stacking Sequence ABCB ABCACB
Density 3.21 3.21
Mohs Hardness ~9.2 ~9.2
Thermal Expansion Coefficient (CTE) (/K) 4-5 x10-6 4-5 x10-6
Refraction Index @750nm

no = 2.61

ne = 2.66

no = 2.60

ne = 2.65

Dielectric Constant c ~ 9.66 c ~ 9.66
Doping Type N-type or Semi-insulating N-type or Semi-insulating

Thermal Conductivity (W/cm-K @298K)

(N-type, 0.02 ohm-cm)




Thermal Conductivity (W/cm-K @298K)

(Semi-insulating type)







Band-gap (eV) 3.23 3.02
Break-Down Electrical Field (V/cm) 3-5 x 106 3-5 x106
Saturation Drift Velocity (m/s) 2.0 x 105 2.0 x 105
Wafer and Substrate Sizes Wafers: 2, 3, 4, 6 inch; smaller substrates: 10x10, 20x20 mm, other sizes are available and can be custom-made upon request
Product Grades

A Grade Zero micropipe density (MPD < 1 cm-2)

B Grade Production grade (MPD < 5 cm-2)

C Grade Research grade (MPD < 15 cm-2)

D Grade Dummy grade (MPD < 30 cm-2)



Diameter 50.8 76.2 100 150 mm
Type 4H- N (Nitrogen) / 4H-SI (Semi-Insulating)  
Resistivity 4H-Ni: 0.015 ~ 0.028 ; 4H-SI: >1E5 Ω.cm
Thickness* (330 ~ 500) ± 25 µm

On-axis: <0001> ± 0.5˚

Off-axis: 4˚± 0.5˚off toward (11-20)

Primary Flat* (10-10) ± 5.0˚ degree
Secondary Flat Silicon Face: 90˚CW from Primary ± 5.0˚ None degree
TTV* ≤15 µm
Bow* ≤25 ≤40 µm
Warp* ≤25 ≤35 ≤40 ≤60 µm
Micropipe Density Zero:≤1 / Production:≤5 / Dummy:≤15 cm-2
Roughness Polished (Ra≤1) nm
CMP (Ra≤0.5)


2inch Dia 50.8mm 4H-Semi SiC Substrate Research Grade Single Crystal 02inch Dia 50.8mm 4H-Semi SiC Substrate Research Grade Single Crystal 1






Industrial chain

The silicon carbide SiC industrial chain is divided into substrate material preparation, epitaxial layer growth, device manufacturing and downstream applications. Silicon carbide monocrystals are usually prepared by physical vapor transmission (PVT method), and then epitaxial sheets are generated by chemical vapor deposition (CVD method) on the substrate, and the relevant devices are finally made. In the industrial chain of SiC devices, due to the difficulty of substrate manufacturing technology, the value of the industrial chain is mainly concentrated in the upstream substrate link.


ZMSH company provides provides 100mm and 150mm SiC wafers. With its hardness (SiC is the second hardest material in the world) and stability under heat and high voltage current, this material is being widely used in several industries.





Q: What's the wayof shipping and cost and pay term ?

A:(1) We accept 50% T/T In advance and left 50% before delivery by DHL, Fedex, EMS etc.

(2) If you have your own express account, it's great.If not,we could help you ship them.

Freight is in accordance with the actual settlement.


Q: What's your MOQ?

A: (1) For inventory, the MOQ is 3pcs.

(2) For customized products, the MOQ is 10pcs up.


Q: Can I customize the products based on my need?

A: Yes, we can customize the material, specifications and shape, size based on your needs.


Q: What's the delivery time?

A: (1) For the standard products

For inventory: the delivery is 5 workdays after you place the order.

For customized products: the delivery is 2 or 3 weeks after you place the order.

(2) For the special-shaped products, the delivery is 4 workweeks after you place the order.


Contact Us at Any Time

Rm5-616,No.851,Dianshanhu avenue, Qingpu area,Shanghai city,CHINA
Send your inquiry directly to us