From the perspective of terminal application layer, silicon carbide materials have a wide range of applications in high-speed rail, automotive electronics, smart grids, photovoltaic inverters, industrial electromechanical, data centers, white goods, consumer electronics, 5G communication, next-generation displays, and other fields, with huge market potential.
Silicon carbide has offered a wide array of potential applications. It can be used in fields such as high-speed rail, automotive electronics, smart grids, photovoltaic inverters, industrial electromechanical, data centers, white goods, consumer electronics, 5G communication, and next-generation displays. All these fields come with a huge and promising market potential.
In terms of application, it is divided into low voltage, medium voltage, and high voltage fields:
Low voltage field
Some consumer electronics can be particularly powered by low voltage silicon carbide lights. For instance, in Xiaomi and Huawei, fast chargers with gallium nitride devices has been launched.
Medium voltage field
Silicon carbide can be used in voltage larger than 3300v, especially in automotive electronics and rail transit power grid systems. Tesla created a model 3, which is the earliest product that leveraged silicon carbide devices. As for its diode and MOSFEF products, they have been promoted and applied in the market.
High voltage field
Silicon carbide offers many unique advantages compared to other materials, but so far, has not launched any mature product in the high-voltage field. The world is still in a stage of research and development. Electric vehicles are the most promising application domain and Toyota's electric drive module is a great example of how silicon carbide can be used. The volume of these devices is 50% smaller compared to silicone based IGBTs and their energy density is far higher. Optimal component layout can be achieved and more space can be freed for other new systems.
4H-SiC and 6H-SiC are bothTypes of crystals that are found in different diameters. 4H-SiC is 50.8mm(2 inches)in diameter while 6H-SiC is up to 200mm(8 inches) in diameter. Both crystals are doped with Nitrogen (N) and are intrinsic, or HPSI for short. The resistivity in 4H-SiC is .015 to .028 ohm*cm while 6H-SiC has a resistivity of over 1E7 ohm*cm.
The thickness range of 4H-SiC and 6H-SiC is identical with both being between 250um-15,000um (15mm). When it comes to surface finish, both crystals can be single or double sides polished. The stacking sequence for 4H-SiC is ABCB while 6H-SiC has a sequence of ABCACB. The dielectric constant for 4H-SiC is 9.6 and 6H-SiC is 9.66.
The electron mobility of 4H-SiC is 800 cm2/V*S compared to 400 cm2/V*S for 6H-SiC. And finally, the density of both crystals is the same at 3.21 * 103 kg/m3.
ZMSH's SIC010 SiC Substrate is a high-performance device that meets the requirements of high-end applications and provides reliable performance. It is widely used in designs that require high power, high temperature, and high frequency. This SiC Substrate is perfect for use in power electronics, optoelectronics, and other applications. Its size can be customized from 0.5x0.5mm to 10x10mm and its tensile strength is greater than 400MPa. It has a resistivity range of 0.015~0.028ohm.cmor greater than 1E7ohm.cm and its surface can be Si-face CMP and C-face Mp.
This SIC010 SiC Substrate from ZMSH is RoHS compliant and the minimum order quantity is 10pc. It is available at competitive prices and its delivery time is within 30days. It accepts payment via T/T and its supply ability is 1000pc/month.
Brand Name: ZMSH
Model Number: SIC010
Place of Origin: CHINA
Minimum Order Quantity: 10pc
Price: By Case
Packaging Details: Customized Plastic Box
Delivery Time: In 30 Days
Payment Terms: T/T
Supply Ability: 1000pc/Month
Size: Customized OK
Substrate Type: Substrate
Thermal Expansion Coefficient: 4.5 X 10-6/K
Surface: Si-face CMP; C-face MP;
Resistivity: 0.015~0.028ohm.cm; or >1E7ohm.cm;
Special Features: Silicon Carbide Wafers, SiC Laser Cutting
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