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Home > Products > SiC Substrate > 4" 4H-Semi High Purity SIC Wafers Prime Grade Semiconductor EPI Substrates

4" 4H-Semi High Purity SIC Wafers Prime Grade Semiconductor EPI Substrates

Product Details

Place of Origin: China

Brand Name: ZMSH

Certification: ROHS

Model Number: HPSI 4h-semi SIC

Payment & Shipping Terms

Minimum Order Quantity: 25pcs

Price: Negotiation

Packaging Details: Customized Box

Delivery Time: In 30 days

Payment Terms: T/T

Get Best Price
Highlight:

Semiconductor EPI Substrates

,

High Purity SIC Wafers

,

4H-Semi SiC Substrate

Material:
HPSI 4h-Semi SIC
Grade:
P
Diameter:
4''
Thickness:
500±25μm
Orientation:
<0001>
TTV:
≤5μm
BOW:
-15μm~15μm
Warp:
≤10μm
Application:
EPI Substrates
Material:
HPSI 4h-Semi SIC
Grade:
P
Diameter:
4''
Thickness:
500±25μm
Orientation:
<0001>
TTV:
≤5μm
BOW:
-15μm~15μm
Warp:
≤10μm
Application:
EPI Substrates
4" 4H-Semi High Purity SIC Wafers Prime Grade Semiconductor EPI Substrates

4’’ 4H-Semi High-Purity SIC Wafers Prime Grade Semiconductor EPI Substrates 

 

 

 

Description of HP 4H-semi SIC:

 

1. The high purity semi-insulating 4H-SiC (silicon carbide) wafers are very ideal semiconductor materials.

 

2. Semi-insulated 4H-SiC sheet is prepared by high temperature pyrolysis, crystal growth and cutting process.

 

3. High-purity semi-insulated 4H-SiC sheets have lower carrier concentrations and higher insulation properties.

 

4. 4H-SiC is a hexagonal lattice. This crystal structure gives 4H-SiC excellent physical and electrical properties.

 

5. The process requires high purity of raw materials and precision to ensure the silicon wafer a consistent structure.

 

 

 

Features of HP 4H-semi SIC:

 

The high purity semi-insulated 4H-SiC (silicon carbide) sheet is an ideal semiconductor material:


1. Band gap width: Generally, 4H-SiC has a wide band gap width of about 3.26 electron volts (eV).

 

2. Due to its thermal stability and insulation properties, 4H-SiC can operate in a wide temperature range.


3. 4H-SiC has a high resistance to radiation used in nuclear energy and high energy physics experiments.

 

4. 4H-SiC has high hardness and mechanical strength, which makes it have excellent stability and reliability.

 

5. 4H-SiC has a high electron mobility in the range of 100-800 square centimeters /(volts · second) (cm^2/(V·s).


6. High thermal conductivity: 4H-SiC has a very high thermal conductivity, about 490-530 watts/m-kelle (W/(m·K).


7. High voltage resistance: 4H-SiC has excellent voltage resistance, making it suitable for high voltage applications.

 

 

Technical Parameters of HP 4H-semi SIC:

 

 

Production

Research

Dummy

Type

4H

4H

4H

Resistivity9(ohm·cm)

≥1E9

100% area>1E5

70% area>1E5

Diameter

99.5~100mm

99.5~100mm

99.5~100mm

Thickness

500±25μm

500±25μm

500±25μm

On-axis

<0001>

<0001>

<0001>

Off-axis

0± 0.25°

0± 0.25°

0± 0.25°

Secondary flat length

18± 1.5mm

18± 1.5mm

18± 1.5mm

TTV

≤5μm

≤10μm

≤20μm

LTV

≤2μm(5mm*5mm)

≤5μm(5mm*5mm)

NA

Bow

-15μm~15μm

-35μm~35μm

-45μm~45μm

Warp

≤20μm

≤45μm

≤50μm

Ra(5μm*5μm)

Ra≤0.2nm

Ra≤0.2nm

Ra≤0.2nm

Micropipe Density

≤1ea/cm2

≤5ea/cm2

≤10ea/cm2

Edge

Chamfer

Chamfer

Chamfer

 

 

 

Applications of HP 4H-semi SIC:

 

High purity semi-insulated 4H-SiC (silicon carbide) sheets are widely used in many fields:

 

1. Optoelectronic devices: Semi-insulated 4H-SiC is widely used in the manufacture of optoelectronic devices.

 

2. Rf and microwave devices: The high electron mobility and low loss characteristics of semi-insulated 4H-SiC.

 

3. Other fields: Semi-insulated 4H-SiC also has some applications in other fields, such as irradiation detectors.

 

4. Due to the high thermal conductivity and excellent mechanical strength of 4H-semi SiC in extreme temperature.


5. Power electronic devices: Semi-insulated 4H-SiC is widely used in the manufacture of high-power power devices.

 

4" 4H-Semi High Purity SIC Wafers Prime Grade Semiconductor EPI Substrates 0

 

 

 

Other related product HP 4-H-semi SIC:

 

4H-N SIC

 

 

4" 4H-Semi High Purity SIC Wafers Prime Grade Semiconductor EPI Substrates 1

 

 

 

 

FAQ about HPSI 4H-semi SIC:

 

Q: What is the Brand Name of HPSI 4h-semi SIC?

A: The Brand Name of HPSI 4h-semi SIC is ZMSH.

 

Q: What is the Certification of HPSI 4h-semi SIC?

A: The Certification of HPSI 4h-semi SIC is ROHS.

 

Q: Where is the Place of Origin of HPSI 4h-semi SIC?

A: The Place of Origin of HPSI 4h-semi SIC is CHINA.

 

Q: What is the MOQ of HPSI 4h-semi SIC at one time?

A: The MOQ of HPSI 4h-semi SIC is 25pcs at one time.