CVD SiC Epitaxy Wafer 2inch 3inch 4inch 6inch epitaxy thickness 2.5-120 um for electronic power

Product Descriptions

SiC Epitaxy Wafers: These are single-crystal silicon carbide wafers with epitaxial layers grown on a SiC Epitaxy substrate. They are used as a key building block in various electronic and optoelectronic devices. It typically use SiC Epitaxy  substrate material. SiC is a wide-bandgap semiconductor with excellent thermal conductivity, high breakdown voltage, and chemical inertness.

SiC Epitaxy Wafer can have different epitaxial layer thicknesses, ranging from a few nanometers to several micrometers. SiC Epitaxy wafers' thickness can be tailored to specific device requirements and desired material properties.And SiC Epitaxy Wafer can be grown on various crystal orientations, such as 4H-SiC, 6H-SiC, or 3C-SiC. The choice of crystal orientation depends on the desired device characteristics and performance.

The epitaxial layers on SiC Epitaxy Wafer can be doped with specific impurities to achieve desired electrical properties. This allows for the fabrication of p-type, n-type, or even semi-insulating epitaxial layers.Silicon carbide epitaxial wafers typically have a high-quality surface finish, with low roughness and low defect density. This ensures good crystal quality and facilitates subsequent device processing steps.SiC Epitaxy Wafers are available in various diameters, such as 2 inches, 3 inches, 4 inches, or larger. Larger wafer sizes enable higher device integration and improved manufacturing efficiency.

Epi SiC wafer

The SiC epitaxy growth process allows for the controlled deposition of high-quality crystalline layers on a silicon carbide substrate, enabling the development of advanced semiconductor devices with enhanced performance and reliability.

Product Parameters

Product Growth method

SiC epitaxy wafers are typically grown using the Chemical Vapor Deposition (CVD) method. Here is a general description of the growth process for silicon carbide epitaxy wafers:

Preparation: Firstly, a SiC epitaxy substrate, usually a single-crystal silicon carbide substrate, is prepared. The SiC epitaxy substrate undergoes surface treatment and cleaning to ensure good crystal quality and interface bonding.

Reaction Conditions: The temperature, atmospheric pressure, and gas flow rates in the reactor are controlled based on the desired type and properties of the epitaxial layer to be grown. These conditions affect the growth rate, crystal quality, and doping concentration of the epitaxal layer.

Epitaxial Layer Growth: Under controlled reaction conditions, the precursors decompose and form new crystalline layers on the surface of the SiC epitaxy  substrate. These layers gradually deposit and accumulate, forming the desired epitaxial layer.

Growth Control: The thickness and crystal quality of the epitaxial layer can be controlled by adjusting the reaction conditions and growth time. Multiple growth cycles can be performed to create composite structures or multilayer epitaxial structures.

Comparison of product advantages  

SiC Epitaxy Wafers:

• ​SiC Epitaxy Wafers  are widely used in high-power electronic devices such as power converters, motor drives, and power electronic systems. Their high thermal conductivity and high breakdown voltage enable operation in high-temperature and high-voltage conditions.
• SiC Epitaxy Wafers are also used in high-frequency electronic devices such as RF power amplifiers and microwave devices, as they exhibit low losses and higher efficiency at high frequencies.
• SiC Epitaxy Wafers find applications in optoelectronic devices such as photodetectors and laser diodes.

​​Si Epitaxial Wafers:

• Epi Si wafers are primarily used in the manufacturing of integrated circuits (ICs), including microprocessors, memory devices, and sensors. They are suitable for applications requiring complex circuit structures and low power consumption.
• epi Si wafers are widely used in areas such as communications, computing, and consumer electronics, supporting the functionality and performance of modern electronic devices.
• Due to the advantages of silicon material, epi Si wafers benefit from mature manufacturing processes, equipment, and material supply in the industry.

  ​In summary, epi SiC waters are primarily used in high-temperature, high-power, and high-frequency applications, while epi Si chips are more suitable for room temperature and low-power applications, particularly in the manufacturing of integrated circuits and microprocessors.

Product growth pattern

   When it comes to the CVD growth method for SiC epitaxial wafers.When it comes to the CVD (Chemical Vapor Deposition)growth method for SiC epitaxial wafers,CVD is a commonly used technique for growing thin films from the bottom up, and it can be employed to deposit SiC films onto a substrate. The CVD growth process involves introducing selected precursor materials into a reaction chamber, where they interact with the reactants on the substrate surface and deposit a film through chemical reactions.

   The CVD growth method for SiC epitaxial wafers enables the fabrication of SiC films with desired material properties and structures. These films find broad applications in semiconductor, power electronics, optoelectronics, and other device manufacturing fields. By adjusting the growth conditions and controlling the growth process, precise control can be achieved over the thickness, crystal quality, impurity incorporation, and interface properties of SiC films to meet the requirements of different applications.