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Silicon Carbide Wafer 2inch 4inch 6inch 8inch Industrial Use With Surface Roughness ≤0.2nm
  • Silicon Carbide Wafer 2inch 4inch 6inch 8inch Industrial Use With Surface Roughness ≤0.2nm
  • Silicon Carbide Wafer 2inch 4inch 6inch 8inch Industrial Use With Surface Roughness ≤0.2nm
  • Silicon Carbide Wafer 2inch 4inch 6inch 8inch Industrial Use With Surface Roughness ≤0.2nm
  • Silicon Carbide Wafer 2inch 4inch 6inch 8inch Industrial Use With Surface Roughness ≤0.2nm

Silicon Carbide Wafer 2inch 4inch 6inch 8inch Industrial Use With Surface Roughness ≤0.2nm

Place of Origin Shanghai China
Brand Name ZMSH
Certification ROHS
Model Number Silicon Carbide Wafer
Product Details
Grade:
Production/ Research/ Dummy
Doped:
Silicon Doped/Un-doped/Zn Doped
Diameter:
150.0 Mm +/- 0.2 Mm
Type:
4H-N
Particle:
Free/Low Particle
Electrical Resistivity(Ohm-cm):
0.015~0.025
High Light: 

6inch Silicon Carbide Wafer

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8inch Silicon Carbide Wafer

,

4inch Silicon Carbide Wafer

Product Description

Silicon Carbide Wafer 2inch 4inch 6inch 8inch Industrial Use With Surface Roughness ≤0.2nm

Product description

ZMSH has emerged as the predominant manufacturer and supplier of SiC (Silicon Carbide) substrate wafers. We pride ourselves on offering the most competitive prices in the market for 2-inch and 3-inch Research grade SiC substrate wafers, providing customers with exceptional value.

SiC substrate wafers find applications in a wide range of electronic device designs, particularly in products requiring high power and high frequency capabilities. These wafers play a crucial role in enabling the development of advanced and efficient electronic systems.

In addition, SiC substrate wafers are extensively utilized in the field of LED (Light Emitting Diode) technology. LEDs are semiconductor devices that generate energy-efficient and low-heat light by combining electrons and holes. SiC substrate wafers contribute significantly to the performance and reliability of LEDs, making them an essential component in the LED industry.

At ZMSH, we are committed to providing top-quality SiC substrate wafers at the best prices, catering to the diverse needs of our customers across various industries.

Product parameter

Parameter Value
Product Name Silicon carbide substrate
Growth Method MOCVD
Crystal Structure 6H, 4H
Stacking Sequence 6H: ABCACB, 4H: ABCB
Grade Production Grade, Research Grade, Dummy Grade
Conductivity Type N-type or Semi-Insulating
Band-gap 3.23 eV
Hardness 9.2 (Mohs)
Thermal Conductivity @300K 3.2~4.9 W/cm.K
Dielectric Constants e(11)=e(22)=9.66, e(33)=10.33
Resistivity 4H-SiC-N: 0.0150.028 Ω·cm, 6H-SiC-N: 0.020.1 Ω·cm, 4H/6H-SiC-SI: >1E7 Ω·cm
Packing Class 100 clean bag, in class 1000 clean room

Product application

Silicon Carbide wafers (SiC wafers) are highly sought-after for their suitability in automotive electronics, optoelectronic devices, and industrial applications. These wafers encompass both 4H-N Type SiC substrates and semi-insulating SiC substrates, which serve as crucial components in a wide range of devices.

4H-N type SiC substrates possess exceptional properties, including a wide band gap that enables efficient power switching in electronics. They exhibit remarkable resistance to mechanical wear and chemical oxidation, making them ideal for applications requiring high-temperature operation and low power loss.

Semi-insulating SiC substrates offer excellent stability and thermal resistance, making them well-suited for various optoelectronic applications. Their ability to maintain stability in high-powered devices is particularly valuable. Additionally, semi-insulating SiC substrates can be utilized as bonded wafers, playing a vital role in the development of high-performance microelectronic devices.

The unique features of SiC wafers make them highly versatile for a wide range of applications, with particular prominence in the automotive, optoelectronic, and industrial sectors. SiC wafers are indispensable components in today's technological landscape and continue to gain popularity across diverse industries.

Silicon Carbide Wafer 2inch 4inch 6inch 8inch Industrial Use With Surface Roughness ≤0.2nm 0Silicon Carbide Wafer 2inch 4inch 6inch 8inch Industrial Use With Surface Roughness ≤0.2nm 1

FAQ

What is a SiC substrate?

What are Silicon Carbide (SiC) Wafers & Substrates?

Silicon Carbide (SiC) wafers and substrates are specialized materials used in semiconductor technology made from silicon carbide, a compound known for its high thermal conductivity, excellent mechanical strength, and wide bandgap.

A SiC substrate, or silicon carbide substrate, is a crystalline material used as a foundation or base upon which semiconductor devices are fabricated. It is composed of silicon and carbon atoms arranged in a crystal lattice structure, typically exhibiting a hexagonal or cubic crystal structure. SiC substrates are engineered to have specific electrical, thermal, and mechanical properties that make them highly suitable for a wide range of electronic and optoelectronic applications.

SiC substrates offer several advantages over traditional semiconductor materials like silicon (Si), including:

Wide Bandgap: SiC has a wide bandgap, typically around 2.9 to 3.3 electron volts (eV), which allows for the fabrication of high-power, high-temperature, and high-frequency devices. This wide bandgap enables devices to operate efficiently at higher temperatures and voltages while minimizing leakage current.
High Thermal Conductivity: SiC substrates have excellent thermal conductivity, which allows for efficient dissipation of heat generated during device operation. This property is critical for maintaining device reliability and performance, especially in high-power and high-temperature applications.
Chemical Stability: SiC is chemically stable and resistant to corrosion, making it suitable for use in harsh environments and reactive chemical processes. This stability ensures long-term device reliability and stability in various operating conditions.
Mechanical Hardness: SiC substrates exhibit high mechanical hardness and stiffness, along with resistance to mechanical wear and deformation. These properties contribute to the durability and longevity of devices fabricated on SiC substrates.
High Breakdown Voltage: SiC devices can withstand higher breakdown voltages compared to silicon-based devices, allowing for the design of more robust and reliable power electronics and high-voltage devices.
High Electron Mobility: SiC substrates have high electron mobility, which results in faster electron transport and higher switching speeds in electronic devices. This property is advantageous for applications requiring high-frequency operation and fast switching speeds.

Overall, SiC substrates play a crucial role in the development of advanced semiconductor devices for applications in power electronics, radiofrequency (RF) communications, optoelectronics, high-temperature electronics, and harsh environment sensing, among others. Their unique combination of electrical, thermal, and mechanical properties makes them indispensable for enabling next-generation electronic and photonic systems across various industries.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

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