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2Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade

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2Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade

2Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade
2Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade 2Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade 2Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade 2Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade 2Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade

Large Image :  2Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade

Product Details:
Place of Origin: CHINA
Brand Name: ZMSH
Certification: rohs
Model Number: 4H-P SiC
Payment & Shipping Terms:
Minimum Order Quantity: 10pc
Price: by case
Packaging Details: customzied plastic box
Delivery Time: in 30days
Payment Terms: T/T
Supply Ability: 1000pc/month
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Detailed Product Description
Surface Hardness: HV0.3>2500 Density: 3.21 G/cm3
Thermal Expansion Coefficient: 4.5 X 10-6/K Dielectric Constant: 9.7
Tensile Strength: >400MPa Material: SiC Monocrystal
Size: 2Inch Breakdown Voltage: 5.5 MV/cm
Highlight:

350μm SIC Silicon Carbide Wafer

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Photovoltaics SIC Silicon Carbide Wafer

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50.8mm SIC Silicon Carbide Wafer

Product Description:

2Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade

4H-P silicon carbide (SiC) is an important semiconductor material commonly used in high-temperature, high-frequency, and high-power electronic devices. 4H-SiC is a type of its crystal structure that has a hexagonal lattice structure. The wide bandgap (approx. 3.26 eV) allows it to operate in high temperature and high voltage environments. High thermal conductivity (about 4.9 W/m ·· K), superior to silicon, can effectively guide and dissipate heat. High thermal conductivity (about 4.9 W/m ·· K), superior to silicon, can effectively guide and dissipate heat. P-type doped silicon carbide has a low resistivity and is suitable for the construction of PN junctions. With the development of electric vehicles and renewable energy technologies, the demand for 4H-P type silicon carbide is expected to continue to grow, driving related research and technological advancements.

 

2Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade 02Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade 1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Features:

· Type: 4H-SiC crystal has a hexagonal lattice structure and provides excellent electrical characteristics.

· Wide bandgap: approx. 3.26 eV for high temperature and high frequency applications.

· P-type doping: P-type conductivity is obtained by doping elements such as aluminum, increasing the pore conductor concentration.

· Resistivity: Low resistivity, suitable for high power devices.

· High thermal conductivity: approx. 4.9 W/m·K, effective heat dissipation, suitable for high power density applications.

· High temperature resistance: It can work stably in high temperature environment.

· High hardness: Very high mechanical strength and toughness for harsh conditions.

· High breakdown voltage: Able to withstand higher voltages and reduce device size.

· Low switching loss: Good switching characteristics in high-frequency operation to improve efficiency.
· Corrosion resistance: Good corrosion resistance to a wide range of chemicals.

· Wide range of applications: suitable for electric vehicles, inverters, high-power amplifiers and other fields.

 

2Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade 22Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade 3

Technical Parameters:

2Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade 4

Applications:

1. Power electronics
    Power converters: For efficient power adapters and inverters for smaller size and higher energy efficiency.
    Electric vehicles: Optimize power conversion efficiency in drive modules and charging stations for electric vehicles.

2. RF devices
    Microwave amplifiers: Used in communication and radar systems to provide reliable high-frequency performance.
    Satellite Communications: High-power amplifier for communication satellites.

3. High temperature applications
    Sensor: A sensor used in extreme temperature environments, capable of stable operation.
    Industrial equipment: equipment and instruments adapted to high temperature conditions.

4. Optoelectronics
    LED technology: Used to improve luminous efficiency in specific short-wavelength LEDs.
    Lasers: Efficient laser applications.

5. Power system
    Smart Grid: Improving energy efficiency and stability in high-voltage direct current (HVDC) transmission and grid management.

6. Consumer Electronics
    Fast charging device: A portable charger for electronic devices that improves charging efficiency.

7. Renewable energy
    Solar inverter: Achieve higher energy conversion efficiency in photovoltaic systems.

 
2Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade 5

Customization:

Our SiC substrate is available in the 4H-P type and is RoHS certified. The minimum order quantity is 10pc and the price is by case. The packaging details are customized plastic boxes. The delivery time is within 30 days and we accept T/T payment terms. Our supply ability is 1000pc/month. The SiC substrate size is 2inch. Place of origin is China.
 
2Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade 6

Our services:

1. Factory direct manufacture and sell.

2. Fast, accurate quotes.

3. Reply to you within 24 working hours.

4. ODM: Customized design is avaliable.

5. Speed and precious delivery.

FAQ:
Q: What's the way of shipping and cost?
A:(1) We accept DHL, Fedex, EMS etc.
   (2) If you have your own express account, it's great.If not,we could help you ship them.
        Freight is in accordance with the actual settlement.

Q: How to pay?
A:50％ deposit, left 50％ before delivery T/T, Paypal.

Q: What's your MOQ?
A: (1) For inventory, the MOQ is 10pcs.
    (2) For customized products, the MOQ is 25pcs up.

Q: What's the delivery time?
A: (1) For the standard products
          For inventory: the delivery is 5 workdays after you place the order.
          For customized products: the delivery is 2 or 3 weeks after you place the order.

 

 

Tag:

sic wafer,

sic substrate,

silicon carbide substrate

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Tel: +8615801942596

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