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SiC Seed Wafer 8inch Thickness 600±50um 4H Type Production Grade For Silicon Carbide Crystal Growth

Product Details

Place of Origin: China

Brand Name: ZMSH

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Delivery Time: 2-4weeks

Payment Terms: T/T

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4H SiC seed wafer

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8inch SiC seed wafer

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SiC seed wafer for Crystal Growth

Polytype:
4H
Monocrystall Area:
》153mm
Diameter:
205±0.5mm
Thickness:
600±50μm
Roughness:
Ra≤0.2nm
Surface Orientation Error:
4°toward<11-20>±0.5º
Polytype:
4H
Monocrystall Area:
》153mm
Diameter:
205±0.5mm
Thickness:
600±50μm
Roughness:
Ra≤0.2nm
Surface Orientation Error:
4°toward<11-20>±0.5º
SiC Seed Wafer 8inch Thickness 600±50um 4H Type Production Grade For Silicon Carbide Crystal Growth

SiC seed wafer 8inch thickness 600±50um 4H type production grade for Silicon carbide crystal growth

 

SiC seed wafer's abstract

 

SiC seed wafers are critical in the production of high-quality silicon carbide (SiC) crystals. These wafers serve as substrates for the growth of SiC single crystals, used extensively in power electronics due to their superior thermal conductivity and high breakdown voltage. Production-grade SiC seed wafers undergo strict quality control to ensure the optimal growth environment for SiC crystals. The seed wafers are typically classified by purity and structural integrity, which directly impact the performance of SiC-based devices like MOSFETs and Schottky diodes. Advanced techniques, such as physical vapor transport (PVT), rely on these wafers to produce defect-free crystals for industrial applications.

 


 

SiC seed wafer's photo

 

SiC Seed Wafer 8inch  Thickness 600±50um 4H Type  Production Grade For Silicon Carbide Crystal Growth 0SiC Seed Wafer 8inch  Thickness 600±50um 4H Type  Production Grade For Silicon Carbide Crystal Growth 1

 


 

SiC seed wafer's properties 

SiC Seed Wafer 8inch  Thickness 600±50um 4H Type  Production Grade For Silicon Carbide Crystal Growth 2

 

 

Production-grade SiC seed wafers are defined by their high purity and structural integrity, which are critical for the successful growth of silicon carbide crystals. The purity of the wafer directly influences the quality of the crystal that will be grown upon

 it. Impurities can lead to defects in the crystal structure, reducing the efficiency and performance of the resulting SiC semiconductor devices. High-purity SiC seed wafers ensure that the crystal growth process is stable, free from contamination, and results in a product with superior electrical properties. Additionally, the structural integrity of the wafer, including its flatness and surface smoothness, is essential for promoting uniform cryst

al growth. Wafers with minimal defects ensure that the SiC crystals produced are of high quality and capable of withstanding demanding conditions in power electronics applications.

 
 
 
 
 
 
 
 
 
 

 

SiC seed wafer's applications

  1. Power Electronics
    SiC seed wafers are crucial in the production of high-performance power electronics. Silicon carbide (SiC) semiconductors exhibit superior characteristics, such as high thermal conductivity, low switching losses, and high breakdown voltage, making them ideal for use in power devices. SiC-based components, such as MOSFETs and Schottky diodes, are used in various power systems, including electric vehicles (EVs), industrial motors, and power conversion systems. These devices offer better efficiency and performance in high-temperature and high-voltage environments compared to traditional silicon-based semiconductors.

  1. High-Frequency Devices
    In communication systems and radar applications, SiC seed wafers enable the growth of SiC crystals used in high-frequency devices. The material’s ability to function at higher frequencies with reduced signal losses makes it ideal for RF (radio frequency) and microwave devices. These devices are used in advanced communication networks, aerospace systems, and defense technologies, where performance in extreme conditions is essential. The use of SiC seed wafers allows for the production of high-frequency devices that are more efficient and reliable in transmitting and receiving signals.

  1. LED and Optoelectronics
    SiC seed wafers are also used in the production of optoelectronic devices, including light-emitting diodes (LEDs) and laser diodes. Silicon carbide serves as a substrate for the growth of gallium nitride (GaN), a material widely used in blue and green LEDs. These devices are important for applications in solid-state lighting, displays, and high-efficiency lighting solutions. SiC’s thermal and mechanical stability at high temperatures allows for more efficient and durable LED products, further extending their applications in automotive, commercial, and residential lighting systems.

 

 


Specification

 

SiC Seed Wafer 8inch  Thickness 600±50um 4H Type  Production Grade For Silicon Carbide Crystal Growth 3