Product Details
Place of Origin: China
Brand Name: ZMSH
Payment & Shipping Terms
Delivery Time: 2-4weeks
Payment Terms: T/T
Polytype: |
4H |
Monocrystall Area: |
》153mm |
Diameter: |
205±0.5mm |
Thickness: |
600±50μm |
Roughness: |
Ra≤0.2nm |
Surface Orientation Error: |
4°toward<11-20>±0.5º |
Polytype: |
4H |
Monocrystall Area: |
》153mm |
Diameter: |
205±0.5mm |
Thickness: |
600±50μm |
Roughness: |
Ra≤0.2nm |
Surface Orientation Error: |
4°toward<11-20>±0.5º |
SiC seed wafer 8inch thickness 600±50um 4H type production grade for Silicon carbide crystal growth
SiC seed wafer's abstract
SiC seed wafers are critical in the production of high-quality silicon carbide (SiC) crystals. These wafers serve as substrates for the growth of SiC single crystals, used extensively in power electronics due to their superior thermal conductivity and high breakdown voltage. Production-grade SiC seed wafers undergo strict quality control to ensure the optimal growth environment for SiC crystals. The seed wafers are typically classified by purity and structural integrity, which directly impact the performance of SiC-based devices like MOSFETs and Schottky diodes. Advanced techniques, such as physical vapor transport (PVT), rely on these wafers to produce defect-free crystals for industrial applications.
SiC seed wafer's photo
SiC seed wafer's properties
Production-grade SiC seed wafers are defined by their high purity and structural integrity, which are critical for the successful growth of silicon carbide crystals. The purity of the wafer directly influences the quality of the crystal that will be grown upon
it. Impurities can lead to defects in the crystal structure, reducing the efficiency and performance of the resulting SiC semiconductor devices. High-purity SiC seed wafers ensure that the crystal growth process is stable, free from contamination, and results in a product with superior electrical properties. Additionally, the structural integrity of the wafer, including its flatness and surface smoothness, is essential for promoting uniform cryst
al growth. Wafers with minimal defects ensure that the SiC crystals produced are of high quality and capable of withstanding demanding conditions in power electronics applications.
SiC seed wafer's applications
Specification