SiC seed wafer 4H N type Dia 153 155 2inch-12inch customized Used for manufacturing MOSFETs
Silicon Carbide (SiC) seed crystal wafers serve as fundamental materials in the semiconductor industry. Manufactured from high-purity silicon carbide (SiC) raw materials through Physical Vapor Transport (PVT) or High-Temperature Chemical Vapor Deposition (HTCVD) processes, our company specializes in supplying 2-12 inch SiC seed crystal wafers with various diameter specifications (Dia153, 155, 203, 205, 208) to meet diverse customer requirements.
Equipped with state-of-the-art SiC seed crystal wafer production facilities, ZMSH possess comprehensive capabilities encompassing crystal growth, cutting, grinding, and polishing processes, enabling us to provide high-precision customization services. Moving forward, we will continue to optimize manufacturing processes for large-size (8-12 inch) SiC seed crystal wafers while enhancing crystal quality and yield rates to facilitate their applications in high-end markets including power electronics, RF devices, and new energy vehicles.
Key Features of SiC seed wafers
• Exceptional Thermal Conductivity (490W/m·K): SiC seed crystal wafers exhibit superior heat dissipation performance, making them ideal for high-power devices.
• Wide Bandgap (3.2eV): SiC seed crystal wafers demonstrate high voltage and temperature resistance, with operational capabilities exceeding 600°C.
• Excellent Chemical Stability: SiC seed crystal wafers offer remarkable corrosion resistance for harsh environment applications.
• Low Defect Density (EPD < 10³/cm²): The high crystal quality ensures stable device performance.
• Outstanding Mechanical Strength: With hardness approaching diamond, the wafers provide excellent wear and impact resistance.
Technical specifications of SiC seed wafers
| Silicon carbide seed wafer |
| Polytype |
4H |
| Surface orientation error |
4°toward<11-20>±0.5º |
| Resistivity |
customization |
| Diameter |
205±0.5mm |
| Thickness |
600±50μm |
| Roughness |
CMP,Ra≤0.2nm |
| Micropipe Density |
≤1 ea/cm2 |
| Scratches |
≤5,Total Length≤2*Diameter |
| Edge chips/indents |
None |
| Front laser marking |
None |
| Scratches |
≤2,Total Length≤Diameter |
| Edge chips/indents |
None |
| Polytype areas |
None |
| Back laser marking |
1mm (from top edge) |
| Edge |
Chamfer |
| Packaging |
Multi-wafer cassette |
Primary applications of SiC seed wafers
• Power Semiconductors: SiC seed crystal wafers are used in manufacturing high-efficiency power devices such as MOSFETs and SBDs.
• RF Devices: SiC seed crystal wafers are suitable for high-frequency applications including 5G base stations and radar systems.
• New Energy Vehicles: SiC seed crystal wafers applied in critical components like electric drive systems and onboard chargers.
• Photovoltaic Inverters: SiC seed crystal wafers enhance energy conversion efficiency while reducing power losses.
• Aerospace: SiC seed crystal wafers are capable of withstanding extreme temperatures and radiation for electronic equipment in harsh environments.
Related products
ZMSH leverages proprietary manufacturing technologies to deliver comprehensive end-to-end services from crystal growth to precision processing, including customized wafer sizing (2-12 inch), diameter specifications (Dia153/155/203/205/208), and tailored surface finishes. Our SiC seed crystal wafers meet international advanced standards in crystal purity, defect control, and dimensional accuracy, fulfilling the demands of high-end applications in power electronics, RF communications, and new energy sectors. With robust production capacity and flexible supply chain solutions, we ensure reliable volume supply while maintaining stringent quality control throughout the entire manufacturing and delivery process. Our technical team provides full-process support from product selection to after-sales service, helping customers optimize their semiconductor solutions.
SiC substrates 4H-N/SEMI type:
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