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8inch SiC Epitaxial Substrate MOS Grade Prime Grade 4H-N Type Large Diameter

Name: 8inch SiC Epitaxial Substrate MOS Grade Prime Grade 4H-N Type Large Diameter
Brand: SHANGHAI FAMOUS TRADE CO.,LTD
SKU: 8inch SiC Epitaxial Wafer
Price: 315.00 USD
Availability: InStock

Brand Name:	ZMSH
Model Number:	8inch SiC Epitaxial Wafer
MOQ:	25
Price:	by case
Delivery Time:	2-4 weeks
Payment Terms:	T/T

Detail Information

Product Description

Detail Information

Place of Origin:

CHINA

Certification:

rohs

Diameter:

200mm

Thickness:

500 ±25μm

Epitaxial Thickness:

5-20μm (customizable)

Surface Defect Density:

≤0.5/cm²

Electron Mobility:

≥1000 Cm²/(V·s)

Supported Devices:

MOSFET, SBD, JBS, IGBT

Packaging Details:

package in 100-grade cleaning room

Supply Ability:

1000pcs per month

Highlight:

8inch SiC Epitaxial Substrate

8inch SiC Epitaxial

8inch SiC MOS Grade

Product Description

Product summary of 8inch SiC epitaxial wafer

8inch SiC Epitaxial Substrate MOS Grade Prime Grade 4H-N Type Large Diameter

As a pivotal enabler of third-generation semiconductor advancement, our 8-inch SiC epitaxial wafers achieve dual breakthroughs in material performance and manufacturing efficiency. With a 78% larger usable area (200mm) vs. 6-inch wafers and defect density <0.2/cm² through localized production, they reduce SiC device costs by >30%. Adopted by leading Chinese manufacturers, these wafers now power EVs and smart grids, driving domestic substitution and global competitiveness.

Product specifications of 8inch SiC epitaxial wafer

Parameter

Specification

Diameter

200mm

Thickness

500 ±25μm

Epitaxial Thickness

5-20μm (customizable)

Thickness Uniformity

≤3%

Doping Uniformity (n-type)

≤5%

Surface Defect Density

≤0.5/cm²

Surface Roughness (Ra)

≤0.5 nm (10μm×10μm AFM scan)

Breakdown Field

≥3 MV/cm

Electron Mobility

≥1000 cm²/(V·s)

Carrier Concentration

5×10¹³~1×10¹⁹ cm⁻³ (n-type)

Crystal Orientation

4H-SiC (off-axis ≤0.5°)

Buffer Layer Resistivity

1×10¹⁸ Ω·cm (n-type)

Automotive Certification

IATF 16949 compliant

HTRB Test (175°C/1000h)

Parameter drift ≤0.5%

Supported Devices

MOSFET, SBD, JBS, IGBT

Key features of 8inch SiC epitaxial wafer

1. Process Innovation

Achieves 68.66μm/h epitaxial growth rate (25% faster than imported tools) via domestic MOCVD, with <50μm warpage through low-stress bonding for automated dicing. This high-throughput process enables 20% faster production cycles compared to conventional methods.

2. Material Breakthroughs

Graded carrier concentration (5×10¹³~1×10¹⁹cm⁻³) reduces SiC MOSFET R<sub>DS(on)</sub> to <25mΩ·mm², outperforming 6-inch wafers by 18%. The optimized doping profile also enhances switching efficiency by 15% at high frequencies (>100kHz).

3. Environmental Robustness

Moisture-resistant passivation maintains electrical stability >1000h at 85°C/85% RH, enabling tropical energy storage systems. This performance is validated by MIL-STD-810G humidity testing protocols.

Application of 8inch SiC epitaxial wafer

8inch SiC Epitaxial Substrate MOS Grade Prime Grade 4H-N Type Large Diameter 1

1. Electric Vehicles

Enables 800V traction inverters with 97% efficiency, 350kW peak power, and 1000km range.

2. Ultra-Fast Charging

Integrates 1200V SiC modules in liquid-cooled chargers for 600kW/10-minute 500km recharge.

3. Aerospace Power

Radiation-hardened modules for satellites (-55°C~200°C, 200W/in³), supporting deep-space missions.

4. Quantum Computing

Stable operation at 4K in dilution fridges, extending qubit coherence >1000μs.

Related product recommendations

1. 2inch 3inch 4inch 6inch SiC Epitaxial Wafers 4H-N Production Grade

2. 6inch SiC Epitaxial Wafer Diameter 150mm 4H-N Type 4H-P Type For 5G Communication

FAQ of 8inch SiC epitaxial wafer

1. Q: What are the key advantages of 8-inch SiC epitaxial wafers?

A: 8-inch SiC epitaxial wafers enable higher power density and lower manufacturing costs compared to 6-inch wafers, supporting 150% more die per wafer and 30% reduced material waste.

2. Q: Which industries use 8-inch SiC epitaxial wafers?

A: Critical for EV inverters, solar inverters, and 5G base stations due to 10× higher thermal conductivity and 3× wider bandgap than silicon.

Tags: #8inch SiC Epitaxial Wafer, #Silicon Carbide Substrate, #Diameter 200mm, #Thickness 500μm, #4H-N Type, #MOS Grade, #Prime Grade, #Large Diameter

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