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SiC Substrate
Created with Pixso. ‌6H-N Type SiC Wafer: 2-Inch Substrate, Thickness 350μm or 650μm‌

‌6H-N Type SiC Wafer: 2-Inch Substrate, Thickness 350μm or 650μm‌

Brand Name: ZMSH
Model Number: 6h-n 2inch
MOQ: 3pcs
Price: by case
Delivery Time: 2weeks
Payment Terms: T/T,Western Union
Detail Information
Place of Origin:
CHINA
Certification:
ROHS
Material:
Sic Crystal
Size:
2inch
Thickness:
350um Or 330um
Surface:
CMP At Si-face,c-face Mp
Color:
Transparent
Type:
6h-n
Resistivity:
0.015~0.028ohm.cm
Ra:
<0.2nm Si-face
Packaging Details:
single wafer box
Supply Ability:
5000pcs/month
Product Description
Product Description: Silicon Carbide (SiC) Wafer Solutions
Product Overview

As the transportation, energy, and industrial markets evolve, the demand for reliable, high-performance power electronics continues to grow. To meet the requirements for improved semiconductor performance, device manufacturers are turning to wide-bandgap semiconductor materials, such as our 4H-SiC Prime Grade (4H-type n-type silicon carbide) wafers. These wafers offer exceptional crystal quality and low defect density, making them ideal for demanding applications.

Key Features
  • Optimized Performance & Cost

    Larger wafer diameters enable economies of scale in semiconductor manufacturing, reducing total cost of ownership.

  • Compatibility

    Designed to ensure mechanical compatibility with existing and emerging device fabrication processes.

  • Customization

    Can be tailored to meet specific performance and cost requirements for device design.

  • Quality Assurance

    Low defect density wafers available (MPD ≤ 0.1 cm⁻², TSD ≤ 400 cm⁻², BPD ≤ 1,500 cm⁻²).

Technical Specifications
Parameter 4H-SiC (Single Crystal) 6H-SiC (Single Crystal)
Lattice Parameters a=3.076Å, c=10.053Å a=3.073Å, c=15.117Å
Stacking Sequence ABCB ACB
Mohs Hardness ≈9.2 ≈9.2
Density 3.21 g/cm³ 3.21 g/cm³
Thermal Expansion Coefficient 4-5*10⁻⁶/K 4-5*10⁻⁶/K
Refractive Index @750nm n₀=2.61, nₑ=2.66 n₀=2.60, nₑ=2.65
Dielectric Constant c~9.66 c~9.66
Thermal Conductivity (N-type) a~4.2 W/cm·K @298K c~3.7 W/cm·K @298K
Thermal Conductivity (Semi-insulating) a~4.9 W/cm·K @298K c~3.9 W/cm·K @298K
Band-gap 3.23 eV 3.02 eV
Break-down Electrical Field 3-5*10⁶ V/cm 3-5*10⁶ V/cm
Saturation Drift Velocity 2.0*10⁵ m/s 2.0*10⁵ m/s

‌6H-N Type SiC Wafer: 2-Inch Substrate, Thickness 350μm or 650μm‌ 0‌6H-N Type SiC Wafer: 2-Inch Substrate, Thickness 350μm or 650μm‌ 1‌6H-N Type SiC Wafer: 2-Inch Substrate, Thickness 350μm or 650μm‌ 2

 

Product Series
  • 2-inch Wafers

    Available in thicknesses of 0.33mm or 0.43mm.

  • 6H-N/4H-N SiC Substrates

    High-purity single-crystal structures for power electronics.

  • 150mm Wafers

    enable improved economies of scale compared to 100mm device fabrication.

Customization Services

We offer comprehensive customization options, including:

  • Material specifications (resistivity, doping type, etc.).
  • Wafer size optimization (150mm and larger).
  • Surface treatment customization.
  • Special coatings (e.g., optical coatings).
Inventory Products
Size Thickness Type Grade
2-inch 330μm 4H-N/4H-Semi/6H-Semi dummy/research/production
3-inch 350μm 4H-N/4H-Semi HPSI dummy/research/production
4-inch 350μm 4H-N/500μm HPSI dummy/research/production
6-inch 350μm 4H-N/500μm 4H-Semi dummy/research/production
Technical Support

For detailed technical specifications, please refer to our 150mm Silicon Carbide Wafer Technical PDF.

FAQs
  • Shipping Methods

    If you have your own courier account with DHL, FedEx, TNT, UPS, EMS, or SF Express, we can act as your shipping agent. 

  • Payment Methods

    T/T, PayPal, Western Union, MoneyGram, Letter of Credit. Bank fees: ≤ USD1000 for Western Union; T/T over USD1000 requires telegraphic transfer.

  • Delivery Time
    • Stock products: 5 business days.
    • Custom products: 7-25 business days (depending on order volume).
  • Customization Capabilities

    We can tailor material specifications, size parameters, and optical coatings to meet your specific needs.