Industrial-Grade 6H SiC Substrates for High-Temperature, UV, and Precision Electronics

Industrial-Grade 6H SiC Substrates for High-Temperature, UV, and Precision Electronics

Product Overview

6H Silicon Carbide (SiC) substrates are high-quality single-crystal wafers designed for high-temperature, high-voltage, and specialized optoelectronic applications. Unlike 4H SiC, 6H offers a different hexagonal polytype with slightly lower electron mobility but excellent thermal stability, mechanical strength, and cost-effectiveness for niche uses such as UV LEDs, high-temperature sensors, and industrial electronics.

Key Features

• Hexagonal 6H Crystal Structure: Ensures dimensional stability and mechanical robustness during wafer processing.

• Electrical Properties: Moderate electron mobility suitable for high-temperature and high-voltage devices; supports smaller device footprints.

• Thermal Conductivity (~390–450 W/m·K): Efficient heat dissipation in power modules and harsh environments.

• Mechanical Strength & Chemical Resistance: High hardness and corrosion resistance for long-term reliability.

• Epi-Ready Surface Options: Compatible with epitaxial growth, including hydrogen anneal and CMP polishing.

• Customizable Sizes & Thickness: Available in standard diameters or tailored for specific production needs.

Applications

• High-temperature semiconductor devices and sensors

• UV LEDs and specialized optoelectronics

• Aerospace and automotive electronics exposed to extreme conditions

• Industrial electronics requiring compact and robust components

• Research & development in wide-bandgap semiconductors

Technical Specifications (Typical & Customizable)

Square Substrate Advantages

• High-Temperature Sensors & UV LEDs: Square substrates provide precise alignment for electrodes and package bases.

• Industrial Electronics: Enables compact design with high integration, reducing package-substrate gaps.

• RF & Microwave Circuits (SI option): Reduced signal loss for high-frequency applications.

Manufacturing Process

1. Powder Synthesis: High-purity SiC feedstock.

2. Seed Mounting: 6H seed attached in growth ampoule.

3. High-Temperature Growth: Sublimation at 2300–2500°C forms SiC boule.

4. Slicing: Diamond wire saw slices wafers.

5. Polish & Inspection: CMP or diamond polishing for epi-ready surface; metrology and certificate of analysis (CoA) provided.

Key Applications & Use Cases

• High-temperature electronics and industrial sensors

• UV optoelectronics

• Aerospace and defense electronics under extreme conditions

• Compact high-reliability power devices for niche markets

• R&D and pilot production of wide-bandgap semiconductor devices

FAQ

1.What makes 6H SiC substrates different from 4H?

6H SiC has a different hexagonal polytype, lower electron mobility, and cost-effective advantages for high-temperature and specialized applications, whereas 4H is standard for high-speed, high-efficiency power devices.

2.Can 6H SiC withstand high temperatures?

Yes, it maintains mechanical and electrical stability in extreme thermal environments.

3.Are 6H SiC substrates customizable?

Yes, diameter, thickness, surface finish, and conductivity can be tailored for R&D or production needs.

4.What industries use 6H SiC substrates?

High-temperature sensors, UV LEDs, aerospace, automotive, and industrial electronics that require robust performance in extreme conditions.