4H-N Type SiC Substrate 10x10mm Wafer for Power Electronics

High-Performance Semiconductor Solution for Advanced Electronics

The 10×10mm 4H-N type silicon carbide (SiC) substrateis a high-performance semiconductor material based on third-generation SiC technology. Manufactured via Physical Vapor Transport (PVT)or High-Temperature Chemical Vapor Deposition (HTCVD), it offers exceptional thermal, electrical, and mechanical properties. With a dimensional tolerance of ±0.05 mmand surface roughness Ra < 0.5 nm, it is ideal for prototyping power devices, RF components, and optoelectronic systems. The substrate is available in 4H-SiCor 6H-SiCpolytypes, with N-type or P-type doping options, and undergoes rigorous quality inspections (e.g., XRD, optical microscopy) to ensure semiconductor-grade reliability.

Table 1: Key Parameters of 10×10mm 4H-N Type SiC Substrate

• Superior Thermal Management: With a thermal conductivity of 490 W/m·K(3× higher than silicon), the substrate enables efficient heat dissipation, reducing device operating temperatures and enhancing system longevity.

• High Voltage Tolerance: A breakdown field strength of 2–4 MV/cm(10× higher than silicon) supports high-power applications, while a high electron saturation drift velocity (2×10⁷ cm/s) benefits high-frequency designs.

• Mechanical Robustness: Vickers hardness of 28–32 GPaand flexural strength >400 MPaprovide 5–10× longer service life than conventional materials.

• Environmental Stability: Operational temperatures up to 600°Cand a low thermal expansion coefficient (4.0×10⁻⁶/K) ensure performance in extreme conditions.

Table 2: Core Application Areas of 10×10mm SiC Substrates

• Geometry: Round, rectangular, or user-defined shapes.

• Doping: N-type or P-type with concentrations from 10¹⁵ to 10¹⁹ cm⁻³.

• Thickness: 100–500 μm, with optional backside metallization for improved integration.

The 10×10mm 4H-N type SiC substrate combines advanced material properties with flexibility in design, making it a critical enabler for next-generation electronics in automotive, communication, and energy systems. Its compatibility with high-temperature, high-frequency, and high-power applications positions it as a cornerstone of semiconductor innovation.

Tags: #SiC #4H-SiC #PowerElectronics #Semiconductor #Wafer #10x10mm #ThermalManagement