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Premium 300mm Diameter 4H Polytype N-type Doping Silicon Carbide Substrate for High-Power Devices

Brand Name:	ZMSH
MOQ:	50
Delivery Time:	2-4 WEEKS
Payment Terms:	T/T

Detail Information

Product Description

Detail Information

Place of Origin:

SHANGHAI,CHINA

Polytype:

Doping Type:

N-type

Diameter:

300 ± 0.5 Mm

Thickness:

Green: 600 ± 100 μm / Transparent: 700 ± 100 μm

Surface Orientation:

4° Toward <11-20> ± 0.5°

Primary Flat:

Notch / Full Round

Notch Depth:

1 – 1.5 Mm

Total Thickness Variation (TTV):

≤ 10 μm

Micropipe Density (MPD):

≤ 5 Ea/cm²

Highlight:

300mm Diameter SiC Substrate

4H Polytype Silicon Carbide Substrate

N-type Doping 12-Inch SiC Wafer

Product Description

Premium 12-Inch (300mm) Silicon Carbide (SiC) Substrate Solutions

High-Quality 4H-N Silicon Carbide Substrates (12-Inch/300mm) for High-Power Devices

Comprehensive Product Introduction

The 12-inch (300 mm) Silicon Carbide (SiC) substrate represents the current frontier in wide-bandgap (WBG) semiconductor technology. As the global industry transitions toward higher efficiency and higher power density, this large-diameter crystalline platform provides the essential foundation for next-generation power electronics and RF systems.

Key Strategic Advantages

Massive Throughput: Compared to conventional 150mm (6-inch) and 200mm (8-inch) wafers, the 300mm format offers more than 2.2x and 1.5x the usable surface area, respectively.
Cost Optimization: Dramatically reduces the "cost-per-die" by maximizing the number of chips produced per single manufacturing cycle.
Advanced Compatibility: Fully compatible with modern, fully automated 300mm semiconductor fabrication lines (Fabs), improving overall operational efficiency.

Product Grade Offerings

4H SiC N-type Production Grade: Engineered for high-yield, commercial-grade power device fabrication.
4H SiC N-type Dummy Grade: A cost-effective solution for mechanical testing, equipment calibration, and thermal process validation.
4H SiC Semi-Insulating (SI) Production Grade: Designed specifically for RF, radar, and microwave applications requiring extreme resistivity.

In-Depth Material Characteristics

4H-N Silicon Carbide (Conductive Type)

The 4H-N polytype is a nitrogen-doped, hexagonal crystal structure known for its robust physical properties. With a wide bandgap of approximately 3.26 eV, it provides:

High Breakdown Electric Field: Allows for the design of thinner, more efficient high-voltage devices.
Superior Thermal Conductivity: Enables high-power modules to operate with simplified cooling systems.
Extreme Thermal Stability: Maintains stable electrical parameters even in harsh environments exceeding 200°C.
Low On-Resistance: Optimized for vertical power structures such as SiC MOSFETs and SBDs.

4H-SI Silicon Carbide (Semi-Insulating Type)

Our SI substrates are characterized by exceptionally high resistivity and minimal crystalline defects. These substrates are the preferred platform for GaN-on-SiC RF devices, providing:

Excellent Electrical Isolation: Eliminates parasitic substrate conduction.
Signal Integrity: Ideal for high-frequency microwave applications where low signal loss is critical.

Advanced Crystal Growth & Fabrication Process

Our manufacturing process is vertically integrated to ensure total quality control from raw material to finished wafer.

Sublimation Growth (PVT Method): The 12-inch crystals are grown using the Physical Vapor Transport (PVT) method. High-purity SiC powder is sublimated at temperatures exceeding 2000°C under a precisely controlled vacuum and thermal gradient, recrystallizing onto a high-quality seed crystal.
Precision Slicing & Edge Profiling: Post-growth, the crystal ingots are sliced into wafers using advanced multi-wire diamond sawing. Edge processing involves precision chamfering to prevent chipping and improve mechanical robustness during handling.
Surface Engineering (CMP): Depending on the application, we employ Chemical Mechanical Polishing (CMP) on the Si-face. This process achieves an "Epi-Ready" surface with atomic-scale smoothness, removing all subsurface damage to facilitate high-quality epitaxial growth.

Technical Specifications & Tolerance Matrix

Item	N-Type Production	N-Type Dummy	SI-Type Production
Polytype	4H	4H	4H
Doping Type	Nitrogen (N-type)	Nitrogen (N-type)	Semi-insulating
Diameter	300 ± 0.5 mm	300 ± 0.5 mm	300 ± 0.5 mm
Thickness (Green/Trans)	600/700 ± 100 μm	600/700 ± 100 μm	600/700 ± 100 μm
Surface Orientation	4.0° toward <11-20>	4.0° toward <11-20>	4.0° toward <11-20>
Orientation Accuracy	± 0.5°	± 0.5°	± 0.5°
Primary Flat	Notch / Full round	Notch / Full round	Notch / Full round
Notch Depth	1.0 - 1.5 mm	1.0 - 1.5 mm	1.0 - 1.5 mm
Flatness (TTV)	≤ 10 μm	N/A	≤ 10 μm
Micropipe Density (MPD)	≤ 5 ea/cm²	N/A	≤ 5 ea/cm²
Surface Finish	Epi-ready (CMP)	Precision Grinding	Epi-ready (CMP)
Edge Processing	Rounded Chamfer	No Chamfer	Rounded Chamfer
Crack Inspection	None (3mm exclusion)	None (3mm exclusion)	None (3mm exclusion)

Premium 300mm Diameter 4H Polytype N-type Doping Silicon Carbide Substrate for High-Power Devices 1

Quality Assurance & Metrology

We utilize a multi-step inspection protocol to guarantee consistent performance in your production line:

Optical Metrology: Automated surface geometry measurement for TTV, bow, and warp.
Crystalline Evaluation: Polarized light inspection for polytype inclusions and stress analysis.
Surface Defect Scanning: High-intensity light and laser scattering to detect scratches, pits, and edge chips.
Electrical Characterization: Non-contact resistivity mapping across the central 8-inch and full 12-inch zones.

Industry-Leading Applications

Electric Vehicles (EV): Critical for traction inverters, 800V fast-charging piles, and onboard chargers (OBC).
Renewable Energy: High-efficiency PV inverters, wind power converters, and energy storage systems (ESS).
Smart Grid: High-voltage DC transmission (HVDC) and industrial motor drives.
Telecommunications: 5G/6G macro stations, RF power amplifiers, and satellite links.
Aerospace & Defense: High-reliability power supplies for extreme aerospace environments.

Frequently Asked Questions (FAQ)

Q1: How does the 12-inch SiC substrate improve my ROI?

A: By providing a much larger surface area, you can fabricate significantly more chips per wafer. This reduces the fixed costs of processing and labor per chip, making your final semiconductor products more competitive in the market.

Q2: What is the benefit of the 4-degree off-axis orientation?

A: The 4° orientation toward the <11-20> plane is optimized for high-quality epitaxial growth, helping to prevent the formation of unwanted polytypes and reducing basal plane dislocations (BPD).

Q3: Can you provide customized laser marking for traceability?

A: Yes. We offer customized laser marking on the C-side (carbon face) according to SEMI standards or specific customer requirements to ensure full batch traceability.

Q4: Is the Dummy Grade suitable for high-temperature annealing?

A: Yes, the N-type Dummy Grade shares the same thermal properties as the Production Grade, making it perfect for testing thermal cycles, furnace calibration, and handling systems.

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