| Brand Name: | ZMSH |
| MOQ: | 1 |
| Delivery Time: | 2-4 WEEKS |
| Payment Terms: | T/T |
The 6–8 inch Semiconductor Wafer Polishing Automation Line is a fully integrated post-polishing production system designed for silicon and silicon-carbide (SiC) wafers.
It combines quad-head polishing, automatic wafer de-mounting, ceramic carrier management, precision cleaning, and high-accuracy wafer re-mounting into a single closed-loop automation platform.
This system enables continuous, contamination-controlled, high-yield wafer processing, making it ideal for power semiconductor fabs, SiC substrate manufacturers, and advanced packaging wafer lines.
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The entire line consists of four highly coordinated process modules:
After quad-polishing, wafers are automatically separated from ceramic carriers using low-stress, controlled motion algorithms, preventing:
Edge chipping
Micro-cracks
Residual stress damage
This is especially critical for brittle and high-value SiC wafers.
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Ceramic carriers are automatically sorted, stored, and dispatched.
The buffer system allows:
Continuous operation of the polishing line
Multi-spec carrier compatibility
Stable takt time control
This eliminates production interruptions caused by manual handling or carrier shortage.
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Before re-mounting, each ceramic carrier undergoes deep-level precision cleaning to remove:
Polishing slurry
Sub-micron particles
Chemical residues
This ensures a repeatable, contamination-free surface for every new wafer mounting cycle.
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Wafers are mounted onto cleaned carriers with:
Controlled pressure
Sub-micron alignment
Ultra-high flatness control
This provides the ideal initial condition for the next quad-polishing step, directly improving polishing uniformity and final wafer quality.
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Mounting area cleanliness:
≥ 0.5 µm particles: < 50 ea
≥ 5 µm particles: < 1 ea
Fully compliant with advanced power semiconductor and SiC manufacturing standards.
Mounting flatness ≤ 2 µm
This ensures:
Uniform polishing pressure
Stable material removal rates
Superior thickness uniformity
Critical for high-performance power devices and advanced packaging wafers.
| Wafer Size | Carrier Diameter | Wafers per Carrier | Cycle Time |
|---|---|---|---|
| 6 inch | 485 mm | 6 wafers | 3 min / carrier |
| 6 inch | 576 mm | 8 wafers | 4 min / carrier |
| 8 inch | 485 mm | 3 wafers | 2 min / carrier |
| 8 inch | 576 mm | 5 wafers | 3 min / carrier |
The system allows manufacturers to balance throughput, cost, and surface quality based on their production strategy.
Wafer Size: 6–8 inch Silicon & SiC wafers
Equipment Dimensions: 13,643 × 5,030 × 2,300 mm (L × W × H)
Power Supply: AC 380 V, 50 Hz
Total Power Consumption: Approx. 119 kW
Mounting Flatness: ≤ 2 µm
Mounting Cleanliness:
≥0.5 µm < 50 ea, ≥5 µm < 1 ea
Si and SiC power semiconductor wafers (MOSFET, IGBT, diodes)
SiC substrates and epitaxial wafers
Advanced packaging and interposer wafers
Precision device-grade polished wafers
24/7 remote and on-site technical support
Response within 2 hours
On-site arrival: within 24 hours (local) / 36 hours (non-local)
Free warranty repair and service
Lifetime maintenance and spare-parts support
Critical spare parts always in stock
Regular preventive maintenance visits by field engineers
Yes. The system is specifically optimized for both silicon and silicon-carbide wafers. Motion profiles, mounting pressure, and de-mounting trajectories are tuned to handle the high hardness and brittleness of SiC safely.
By combining ultra-clean carriers, high flatness mounting, and fully automated handling, the system minimizes:
Particle contamination
Wafer warpage
Pressure non-uniformity
This leads to more stable polishing, lower breakage rates, and higher wafer yield.
Yes. The carrier buffer and automated logistics are designed to allow 24/7 continuous operation, keeping the quad-polisher running without waiting for manual loading or cleaning.