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High hardness & wear resistance Excellent electrical insulation Good thermal conductivity

Brand Name:	ZMSH
Model Number:	4inch C-plan SSP sapphire substrates
MOQ:	25
Price:	Fluctuates with market
Delivery Time:	4-9 WEEKS
Payment Terms:	T/T

Detail Information

Product Description

Detail Information

Place of Origin:

China

Crystal Orientation:

C-plane / A / R / M

Diameter:

2/4/6 Inch

Thickness:

650±15 Um

Crystal Growth Method:

KY / EFG / CZ

Surface:

Polished Or According To Application

Polishing Type:

SSP / DSP

Product Description

Information of Sapphire Substrates

Sapphire substrates are critical foundational materials for LEDs and GaN devices. Although its own market size (approximately USD 833 million globally by 2031) is relatively limited, it underpins downstream applications worth trillions of dollars, bearing strategic and pioneering significance.

Upstream: High-purity alumina (mainly 4N5 and above), crystal growth equipment (such as Kyropoulos furnaces), and tungsten‑molybdenum thermal fields. Some high-end raw materials and core equipment still rely partially on imports.

Midstream: Sapphire crystal growth → core extraction → slicing → lapping → polishing → patterned sapphire substrate (PSS). This segment features the highest technical barriers and added value.

Downstream: LED chips (accounting for over 80% of consumption), consumer electronics (cover plates, camera components), third‑generation semiconductors (GaN power/RF devices), optical windows, etc. Downstream applications are expanding from traditional LEDs toward diversified fields.

4 inch C-plane SSP sapphire substrates are single-crystal alumina (Al₂O₃) wafers with a (0001) crystal orientation, produced mainly via the Kyropoulos (KY), HEM or EFG crystal growth methods. SSP stands for Single Side Polished: the front epi-ready surface undergoes ultra-precision polishing to achieve ultra-low surface roughness, while the backside remains fine ground.

High hardness & wear resistance Excellent electrical insulation Good thermal conductivity

Key Features

High-Purity Monocrystalline Sapphire Material

Our sapphire substrates are fabricated from high-purity synthetic single-crystal alumina (Al₂O₃) with 4N5/5N ultra-high purity, specially engineered for high-standard optoelectronic and semiconductor manufacturing environments. The material features excellent thermal stability, chemical inertness, plasma corrosion resistance, and outstanding mechanical rigidity, maintaining stable physical and optical performance under high-temperature epitaxy, vacuum processing, and harsh chemical process conditions.

Multiple Crystal Orientation Options for Diverse Devices

Sapphire substrates are available with mainstream crystal orientations to match different semiconductor and optoelectronic device requirements. C-plane substrates are optimized for GaN epitaxy and LED mass production; R-plane substrates support SOS (Silicon-on-Sapphire) RF and high-speed microelectronic devices; A-plane and M-plane options cater to non-polar/semi-polar GaN devices and special laser components. Custom off-angle specifications are available to improve epitaxial growth quality and device yield.

Ultra-Precision Polishing & Flatness Performance

Available in SSP (Single Side Polished) and DSP (Double Side Polished) grades to fit different process scenarios. Epi-ready polished surfaces achieve ultra-low surface roughness Ra < 0.3 nm, with strictly controlled TTV, BOW and WARP values. The ultra-smooth, defect-free surface perfectly meets MOCVD epitaxy growth standards, ensuring uniform GaN layer deposition and high consistency of chip performance.

Excellent Electrical & Optical Properties

Sapphire substrates provide superior electrical insulation and low dielectric loss, effectively isolating circuit interference for high-frequency and power semiconductor devices. They feature ultra-wide UV-Vis-IR spectral transmittance, low outgassing rate, and stable optical performance, making them ideal for optical window components, precision optoelectronic packaging, and vacuum semiconductor process environments.

Customized Precision Substrate Manufacturing

Substrate specifications can be fully customized according to customer technical requirements, including:

Wafer diameter: 2/3/4/6/8/12 inch
Standard & customized thickness
Crystal orientation & precise off-angle
SSP / DSP polishing modes
Surface roughness & flatness tolerance
Edge chamfer & edge finishing
Surface functional patterning (PSS/NPSS)
Cleanliness grade & precision cleaning process

Functional Processing & Custom Value-Added Services

In addition to standard bare sapphire substrates, we provide full-process customized functional processing to support diversified customer applications. Available services include:

PSS / NPSS patterned substrate fabrication
Full/edge/ring/frame/localized metallization (Au/Ti/Cr/Ni coating)
Ultra-thin wafer slicing & stress relief processing
High-precision cutting, drilling and shaping
Custom surface finishing (polishing/grinding/sandblasting)
Strict quality inspection and complete COA certification

Custom Replacement & OEM-Grade Substrate Solutions

We support customized sapphire substrate development and production based on customer drawings, sample benchmarks, equipment process parameters, existing component specifications and reverse-engineering demands. All products comply with RoHS and REACH standards, providing stable, high-yield substrate solutions for semiconductor process upgrading, equipment matching and localized replacement projects.

Typical Applications

Sapphire substrates are core foundational materials widely adopted in optoelectronic and semiconductor industries, applicable for the following devices and manufacturing processes:

Blue/green/ultraviolet LED epitaxy and chip manufacturing
Mini LED / Micro LED high-end display device production
GaN-based power semiconductor and RF communication devices
SOS (Silicon-on-Sapphire) high-frequency integrated circuits
Automotive lighting, vehicle-mounted optoelectronic components
AR/VR optical windows and precision optical components
MEMS sensors and microfluidic chip carriers
High-precision optical windows and infrared transmission components
Semiconductor vacuum equipment and low-outgassing insulation parts
High-power optoelectronic device packaging and thermal management substrates

Sapphire substrates have been commercially mass-produced for mainstream optoelectronic and semiconductor scenarios, featuring stable batch consistency, low defect rate and excellent process compatibility.

Product Specifications

Item	Specification
Product	Sapphire Substrate / Wafer
Material	Synthetic Sapphire / Al₂O₃ Single Crystal
Growth Method	Kyropoulos / Edge-Defined Film-Fed Growth (EFG)
Crystal Structure	Hexagonal (α-Al₂O₃)
Diameter	2" / 3" / 4" / 6" / 8" or Customized
Thickness	Customized (e.g., 430 µm – 1000 µm)
Orientation	c-plane (0001) / a-plane (11-20) / r-plane (1-102) / m-plane (10-10)
Surface Finish	SSP (Single Side Polished) / DSP (Double Side Polished) / Lapped / Ground
Surface Quality	Scratch-Dig per MIL-PRF-13830B (e.g., 40/20, 20/10)
TTV (Total Thickness Variation)	≤ 5 µm (or per customer requirement)
Bow / Warp	≤ 10 µm (or per customer requirement)
Roughness (Ra)	Polished: ≤ 0.2 nm / Lapped: ≤ 0.5 µm
Edge Type	With Primary Flat / Without Flat (Full Round)
Flat Length	Customized (per SEMI standard or customer drawing)
Edge Profile	Chamfered / Rounded as Required
Dopant / Purity	High Purity (≥ 99.99% Al₂O₃)
Coating	Uncoated / AR Coating / ITO Coating / Metal Coating Available
Application	LED / Semiconductor / Optical / RF & Microwave / Watch / Consumer Electronics

Why Choose Sapphire Substrates for Semiconductor & Optoelectronic Applications?

Sapphire substrates are core foundational materials widely applied in semiconductor epitaxy, optoelectronic device manufacturing, and microelectronic processing systems. Serving as the carrier for GaN, ZnO and other epitaxial layer growth, they operate in extreme manufacturing environments featuring high temperature, strong plasma erosion, chemical corrosion, and high-frequency electromagnetic fields.

Compared with traditional silicon, quartz and common ceramic substrate materials, high-purity single-crystal sapphire substrates integrate superior comprehensive physical and chemical properties, making them irreplaceable for high-end semiconductor and optoelectronic processes. Key advantages include:

Extreme high-temperature stability: Boasting a melting point up to 2050°C, it maintains stable crystal structure and dimensional accuracy under long-term high-temperature epitaxy and annealing processes, effectively avoiding substrate deformation and device failure.
Ultra-high mechanical rigidity and hardness: With a Mohs hardness of 9, second only to diamond, it delivers excellent wear resistance and structural stability, resisting mechanical damage and warpage during precision cutting, etching and thin-film growth.
Superior chemical inertness: It is resistant to corrosion by various acidic, alkaline and reactive process gases used in semiconductor manufacturing, with no chemical reaction or surface deterioration, ensuring ultra-clean process conditions.
Excellent plasma and radiation resistance: It withstands long-term plasma bombardment and ultraviolet radiation in thin-film deposition and etching processes, with low surface damage rate and stable performance.
Insulating and dielectric properties: Featuring high resistivity and low dielectric loss, it provides reliable electrical insulation for high-frequency and high-power optoelectronic devices, effectively reducing signal interference.
High optical transmittance: Achieves excellent light transmission in ultraviolet, visible and infrared bands, perfectly adapting to the preparation of light-emitting and photodetector devices.
Long-term process durability: It maintains consistent surface flatness and crystal quality in repetitive and rigorous semiconductor production processes, greatly reducing substrate replacement frequency and production costs.

For the above reasons, sapphire substrates have become the preferred mainstream material for LED epitaxial wafers, power semiconductor devices, microwave radio frequency devices and other core semiconductor components.

Custom Sapphire Substrate Manufacturing

We specialize in customized and standardized sapphire substrate manufacturing for semiconductor and optoelectronic equipment, focusing on high-precision tailored solutions for industrial production and laboratory R&D. We break the limitations of fixed standard specifications and customize substrates fully in accordance with customers’ actual process parameters, equipment matching requirements and device design standards.

Comprehensive customization options cover full-process substrate parameters and supporting structures:

Sapphire Substrate Core Parameters

Wafer diameter (2/4/6/8 inches and special custom sizes)
Substrate thickness
Crystal orientation (C-plane, A-plane, R-plane, M-plane and customized special crystal planes)
Edge shape and chamfering specifications
Flat/Notch positioning design
Surface roughness and flatness
Double-sided/polished single-sided requirements
Ultra-clean surface treatment and stress relief processing

Matching Structural Components

Substrate carrier fixture size customization
Positioning hole and groove processing
Metal matching base and sleeve structure
Mounting and fixing interface specifications
Integrated assembly of substrate and auxiliary parts

We can provide finished integrated components assembled with sapphire substrates and matching metal/ceramic parts to meet customers’ direct installation and use needs.

Replacement & Reverse Engineering Service

For discontinued sapphire substrates, hard-to-source original parts, and non-standard customized substrates for special semiconductor equipment, we provide professional reverse engineering and replacement manufacturing services. Customers can provide the following information for evaluation and quotation:

Original equipment part number
Detailed technical drawings and parameter specifications
Clear product photos and physical samples (new/used)
Key dimensional and crystal parameter data
Supporting equipment model and batch information
Specific application scenarios and process environment parameters

Our professional engineering team will conduct comprehensive evaluation on substrate structure, crystal performance, processing difficulty and manufacturing feasibility before formal quotation. All customized replacement substrates will be optimized for process compatibility. The final matching performance shall be confirmed according to customers’ actual equipment configuration and production process standards to ensure zero difference in use effect.

Quality Control

We implement full-process precision quality inspection for all sapphire substrates, and can provide targeted inspection items and complete test reports according to customer project requirements and industry standards. Core inspection contents include:

Full-dimensional precision inspection (diameter, thickness, tolerance calibration)
Crystal orientation accuracy detection
Surface flatness, warpage and roughness testing
Visual defect inspection (scratches, pits, cracks, inclusions)
Cleanliness and surface stress detection
Assembly precision and matching tolerance inspection
Professional anti-collision and dust-proof packaging inspection

Formal inspection reports with full test data can be provided to support customer incoming material verification and production quality traceability.

What Information Should You Send for a Quote?

To ensure accurate quotation and shorten delivery cycle, please provide the following detailed information when consulting:

Complete product technical drawings and parameter sheets
Substrate diameter, thickness and tolerance requirements
Crystal orientation and surface processing standards
Surface finish, polishing grade and cleanliness requirements
Parameters of matching auxiliary components (if any)
Equipment brand, model and supporting process conditions
Original OEM part number (if available)
Required quantity and batch demand
Specific application process and extreme environmental requirements

If no complete technical drawings are available, please provide clear high-definition photos and physical samples of the substrate for our team to conduct parameter testing and scheme evaluation.

FAQ

What are sapphire substrates mainly used for?

Sapphire substrates are core carrier materials for semiconductor and optoelectronic device manufacturing, mainly used in GaN-based LED epitaxial wafers, power electronic devices, microwave RF chips, ultraviolet photoelectric devices, semiconductor plasma processing equipment and other fields, suitable for high-temperature epitaxy, thin-film deposition and precision etching processes.

Can you provide customized integrated substrate assembly parts?

Yes. In addition to single sapphire substrate wafers, we can customize various matching fixtures, metal bases, positioning components and finished integrated assemblies according to drawings and sample requirements, realizing one-stop supporting supply.

Can you produce replacement substrates for old and special equipment?

Yes. We support full-service customized manufacturing including drawing-based production and sample reverse engineering. Customers can provide original part numbers, technical parameters, physical samples and equipment information, and our team will complete performance matching and alternative manufacturing.

Can all core parameters of sapphire substrates be customized?

Yes. All key parameters including substrate size, thickness, crystal orientation, edge processing, surface roughness, flatness and polishing grade can be fully customized according to customer process requirements to meet personalized R&D and production needs.

Do you support small-batch and prototype ordering?

Yes. We fully support prototype development, laboratory small-batch testing, equipment maintenance replacement and mass production batch orders. We will evaluate the production scheme and quotation according to customized parameters and processing difficulty.

Tags:

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Semiconductor Equipment

LiNbO3 Wafer

Indium Phosphide Wafer

Ceramic Substrate

Lab Wrapper

Gallium Nitride Wafer

GaAs Wafer

products details

High hardness & wear resistance Excellent electrical insulation Good thermal conductivity

Key Features

High-Purity Monocrystalline Sapphire Material

Multiple Crystal Orientation Options for Diverse Devices

Ultra-Precision Polishing & Flatness Performance

Excellent Electrical & Optical Properties

Customized Precision Substrate Manufacturing

Functional Processing & Custom Value-Added Services

Custom Replacement & OEM-Grade Substrate Solutions

Typical Applications

Product Specifications

Custom Sapphire Substrate Manufacturing

Sapphire Substrate Core Parameters

Matching Structural Components

Replacement & Reverse Engineering Service

Quality Control

What Information Should You Send for a Quote?

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