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typical thickness 350 μm. Custom thickness, SSP/DSP polishing available，PV&energy storage inverters

Brand Name:	ZMSH
Payment Terms:	T/T

Detail Information

Product Description

Detail Information

Place of Origin:

SHANGHAI,CHINA

Base Material:

SIC

Size:

Customized According To Drawing

Thickness:

Customized

Shape:

Round, Square, Or Custom Shapes

Surface:

Polished Or According To Application

Locating Notches:

Quantity, Size And Position Customizable

Product Description

This high-purity 4H N-type silicon carbide (4H-N SiC) wafer is a single-crystal substrate manufactured for power semiconductor device fabrication that requires high breakdown voltage, high thermal conductivity, wide bandgap performance, chemical inertness, and low defect density. The product is characterized by a circular single-crystal body, precise thickness control, an epi-ready polished surface, a controlled crystallographic off-axis orientation, and a carefully profiled wafer edge.

Rather than being a simple flat disc, the wafer incorporates several precisely controlled material parameters that can provide consistent epitaxial growth, reliable device performance, uniform electrical characteristics, and stable thermal management within a semiconductor fabrication process. The epi-ready surface offers a defect-minimized base for subsequent epitaxial deposition, while the controlled off-axis orientation can assist with step-flow growth and maintain defined crystalline quality across the active device area. typical thickness 350 μm. Custom thickness, SSP/DSP polishing available，PV&energy storage inverters

The wafer specification includes several customizable parameters and tolerance controls. These may be designed to match corresponding device fabrication processes, epitaxial growth requirements, lithography equipment standards, or end-application performance targets. Diameter, thickness, off-axis angle, resistivity range, doping concentration, surface finish, edge profile, flatness (TTV), and bow/warp can all be customized according to the customer's technical specification.

This 4H-N SiC wafer is suitable for power MOSFETs, Schottky barrier diodes, IGBTs, bipolar junction transistors, and other power semiconductor devices used in electric vehicle traction inverters, renewable energy converters (solar and wind), industrial motor drives, uninterruptible power supplies, high-voltage switching systems, and high-temperature electronic applications where conventional silicon substrates may encounter breakdown voltage, thermal conductivity, or switching-frequency limitations.

Technical Specifications

Item	Specification
Product	4H-N SiC Substrate / Wafer
Material	4H N-type Silicon Carbide Single Crystal
Growth Method	Physical Vapor Transport (PVT)
Crystal Structure	Hexagonal (4H-SiC Polytype)
Diameter	4" / 6" / 8" or Customized
Thickness	Customized (e.g., 350 μm – 1000 μm)
Orientation	(0001) Si-face / C-face, customizable off-axis angle (typical 4° / 8° toward <11-20>)
Surface Finish	SSP (Single Side Polished) / DSP (Double Side Polished) / Lapped / Ground
Surface Quality	Scratch-Dig per SEMI standard (e.g., 40/20, 20/10)
TTV (Total Thickness Variation)	≤ 5 μm (or per customer requirement)
Bow / Warp	Polished: ≤ 0.2 nm / Lapped: ≤ 0.5 μm
Roughness (Ra)	Polished: ≤ 0.2 nm / Lapped: ≤ 0.5 μm
Edge Type	Chamfered / Rounded as Required
Flat Length	Customized (per SEMI standard or customer drawing)
Edge Profile	Chamfered / Rounded as Required
Dopant / Purity	Nitrogen doped N-type, high purity single crystal
Coating	Uncoated / Custom functional coating available upon request
Application	Power MOSFET, SBD, EV traction inverter, renewable energy converter, industrial power supply, high-temperature electronics

Why Choose 4H-N SiC Substrates for Power Semiconductor Applications?

4H-N SiC substrates are advanced wide-bandgap core foundational materials widely applied in power semiconductor epitaxy, high-voltage electronic device manufacturing, and new energy power processing systems. Serving as the optimal carrier for GaN and SiC epitaxial layer growth, they operate in extreme manufacturing environments featuring ultra-high voltage, high-frequency switching, heavy current load, and long-duration high-temperature operation.

Compared with traditional silicon, sapphire and common ceramic substrate materials, high-purity single-crystal 4H-N SiC substrates integrate superior comprehensive physical and electrical properties, making them irreplaceable for high-end power semiconductor and new energy industrial processes. Key advantages include:

Extreme high-temperature stability: Boasting a melting point up to 2830°C, it maintains stable crystal structure and electrical performance under long-term high-temperature epitaxy, annealing and device service conditions, effectively avoiding substrate failure and power device thermal runaway. typical thickness 350 μm. Custom thickness, SSP/DSP polishing available，PV&energy storage inverters

Ultra-high breakdown voltage: Featuring 10× higher breakdown electric field than silicon materials, 4H-N SiC supports ultra-high-voltage device design, greatly reducing chip thickness a

nd ac

hieving miniaturization of high-power modules.

Superior the

rmal conductivity

: With thermal conductivity 3–4 times that of silicon, it rapidly dissipates operating heat of power devices, effectively lowering junction temperature and improving equipment continuous operating stability.

Excellent high-frequency performance: Low switching loss and low parasitic capacitance enable stable operation under high-frequency switching conditions, significantly improving ener

gy conversion efficiency for high-power equipment.

Stable N-type conductive characteristics: Uniform nitrogen doping provides consistent low-resistivity conductivity, ensuring excellent current conduction and grounding performance for vertical power devices.

Superior chemical and plasma resistance: It resists corrosion from various semiconductor p

rocess gases and strong plasma etching environments, maintaining ultra-stable surface status during epitaxy, etching and thin-film deposition. typical thickness 350 μm. Custom thickness, SSP/DSP polishing available，PV&energy storage inverters

Long-term reliability and radiation resistance: Featuring excellent structural stability and anti-radiation capability, it adapts to harsh working conditions of new energy vehicles, aerospace and industrial high-power equipment, extending device service life.

For the above reasons, 4H-N SiC substrates have become the preferred mainstream material for automotive-grade power MOSFETs, Schottky diodes, photovoltaic inverters, energy storage power modules, and other core high-efficiency power semiconductor components.

Custom 4H-N SiC Substrate Manufacturing

We specialize in customized and standardized 4H-N SiC substrate manufacturing for power semiconductor and optoelectronic equipment, focusing on high-precision tailored solutions for industrial mass production and laboratory R&D. We break the limitations of fixed standard specifications and customize SiC substrates fully in accordance with customers’ actual epitaxy process parameters, wafer fabrication requirements and device design standards.

Comprehensive customization options cover full-process substrate parameters and supporting structures:

4H-N SiC Substrate Core Parameters

Wafer diameter (2/4/6/8 inches and special custom sizes)

Substrate thickness

Crystal orientation (Si-face / C-face, customizable off-axis angle 0°–8°)

Resistivity range and nitrogen doping concentration

Edge shape and chamfering specifications

Flat/Notch positioning design

Surface roughness, flatness, TTV and warp/bow indicators

Double-sided/polished single-sided requirements (SSP/DSP)

Ultra-clean surface treatment and stress relief processing

Matching Structural Components

Wafer carrier fixture size customization

Positioning hole and groove processing

Metal matching base and sleeve structure

Mounting and fixing interface specifications

Integrated assembly of substrate and auxiliary parts

We can provide finished integrated components assembled with 4H-N SiC substrates and matching metal/ceramic parts to meet customers’ direct installation and use needs.

Replacement & Reverse Engineering Service

For discontinued 4H-N SiC substrates, hard-to-source original wafers, and non-standard customized substrates for special semiconductor process equipment, we provide professional reverse engineering and replacement manufacturing services. Customers can provide the following information for evaluation and quotation:

Original equipment part number

Detailed technical drawings and parameter specifications

Clear product photos and physical samples (new/used)

Key dimensional, crystal and electrical parameter data

Supporting epitaxy equipment model and batch information

Specific application scenarios and process environment parameters

Our professional engineering team will conduct comprehensive evaluation on substrate crystal quality, electrical performance, processing difficulty and manufacturing feasibility before formal quotation. All customized replacement SiC substrates will be optimized for epitaxy compatibility and device yield. The final matching performance shall be confirmed according to customers’ actual equipment configuration and production process standards to ensure zero difference in use effect.

Quality Control

We implement full-process precision quality inspection for all 4H-N SiC substrates, and can provide targeted inspection items and complete test reports according to customer project requirements and SEMI industry standards. Core inspection contents include:

Full-dimensional precision inspection (diameter, thickness, tolerance calibration)

Crystal orientation and off-axis angle accuracy detection typical thickness 350 μm. Custom thickness, SSP/DSP polishing available，PV&energy storage inverters

Resistivity uniformity and doping concentration testing

Surface flatness, TTV, bow/warp and roughness testing

Visual defect inspection (scratches, pits, cracks, polytype inclusions)

Surface cleanliness and internal stress detection

Assembly precision and matching tolerance inspection

Professional anti-collision and dust-proof wafer packaging inspection

Formal inspection reports with full test data can be provided to support customer incoming material verification and production quality traceability.

What Information Should You Send for a Quote?

To ensure accurate quotation and shorten delivery cycle, please provide the following detailed information when consulting:

Complete product technical drawings and parameter sheets

Substrate diameter, thickness and tolerance requirements

Crystal orientation, off-axis angle and resistivity range

Surface finish, polishing grade and cleanliness requirements

Parameters of matching auxiliary components (if any)

Epitaxy equipment brand, model and supporting process conditions

Original OEM part number, if available

Required quantity and batch demand

Specific application process and extreme environmental requirements

If no complete technical drawings are available, please provide clear high-definition photos and physical samples of the SiC substrate for our team to conduct parameter testing and scheme evaluation.

FAQ

What are 4H-N SiC substrates mainly used for?

4H-N SiC substrates are core wide-bandgap carrier materials for power semiconductor manufacturing, mainly used in SiC MOSFETs, Schottky barrier diodes, high-voltage power modules, new energy vehicle electric control systems, photovoltaic wind power inverters, industrial high-frequency power supplies and aerospace high-temperature electronic devices, suitable for high-voltage, high-frequency and high-heat-flux epitaxy and chip fabrication processes.

Can you provide customized integrated SiC substrate assembly parts?

Yes. In addition to single 4H-N SiC substrate wafers, we can customize various matching wafer fixtures, metal bases, positioning components and finished integrated assemblies according to drawings and sample requirements, realizing one-stop supporting supply.

Can you produce replacement SiC substrates for old and special equipment?

Yes. We support full-service customized manufacturing including drawing-based production and sample reverse engineering. Customers can provide original part numbers, technical parameters, physical samples and equipment information, and our team will complete performance matching and alternative manufacturing.

Can all core parameters of 4H-N SiC substrates be customized?

Yes. All key parameters including wafer size, thickness, crystal orientation, off-axis angle, resistivity, edge processing, surface roughness and flatness can be fully customized according to customer epitaxy process requirements to meet personalized R&D and mass production needs.

Do you support small-batch and prototype ordering?

Yes. We fully support prototype development, laboratory small-batch testing, equipment maintenance replacement and mass production batch orders. We will evaluate the production scheme and quotation according to customized parameters and processing difficulty.

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