8inch sapphire wafer：Synthetic Single‑Crystal Al₂O₃ customizable A/R/M‑plane 4N5‑5N High Purity

Product Overview

    The 8-inch (200mm) sapphire wafer is a large-format semiconductor substrate fabricated from high-purity synthetic single-crystal alumina (α-Al₂O₃). It serves as a core foundational substrate for LED epitaxy, GaN power devices and RF optoelectronic devices in the third-generation semiconductor industry. The single-crystal ingot is predominantly grown via the Kyropoulos method, and processed through precision procedures including multi-wire slicing, lapping and chemical mechanical polishing. Combining the mass-production advantage of large diameter with the intrinsic properties of sapphire — high temperature resistance, electrical insulation and chemical corrosion resistance — it is compatible with large-scale MOCVD epitaxy production lines, effectively increasing chip output and reducing unit manufacturing cost, making it a critical basic material in high-end optoelectronic and semiconductor fields.

Core Technical Features

Large-size mass production compatibility

    With a large diameter of 200mm (8 inches), the effective epitaxial area per wafer is 4 times larger than that of 4-inch wafers. It is compatible with large-scale MOCVD equipment such as 12-wafer reactors, significantly increasing chip output per batch and reducing the substrate cost per chip. It meets the mass production requirements of Mini/Micro LED and power devices.

High-purity single crystal material system

    Fabricated from 4N5 to 5N grade (99.995% to 99.999%) high-purity alumina raw material, it features a hexagonal α-phase single crystal structure with low dislocation density and excellent crystalline integrity, free from impurity segregation and lattice defects, ensuring the uniformity of epitaxial film growth and device yield.

Excellent thermal stability
    With a melting point of 2050℃, the crystal structure remains stable under the high-temperature MOCVD epitaxy environment of 1000~1200℃. It has a low thermal expansion coefficient and minimal warpage deformation during high-temperature processes, and can withstand multiple high-temperature cycling processes to ensure the consistency of epitaxial layer growth.

Excellent electrical insulation and dielectric properties
    Intrinsic high-purity sapphire has excellent electrical insulation with a room-temperature resistivity higher than 10¹⁴ Ω・cm and low dielectric loss. It achieves effective electrical isolation between devices, suppresses leakage and signal interference under high-voltage conditions, and meets the performance requirements of high-voltage GaN power devices and RF devices.

Epitaxial-level ultra-precision surface machining
    Both Single Side Polished (SSP) and Double Side Polished (DSP) processes are available. The epitaxial surface is treated by chemical mechanical polishing (CMP) with a surface roughness Ra ≤ 0.2nm, achieving atomic-level flatness. Total Thickness Variation (TTV), bow and warp are strictly controlled, fully meeting the surface requirements for MOCVD GaN epitaxial growth.

Strong chemical and plasma resistance
    Sapphire has extremely strong chemical inertness, insoluble in most acid and alkali solutions at room temperature. It can withstand harsh process environments such as plasma etching and wet cleaning in semiconductor manufacturing, with minimal corrosion damage and particle contamination on the surface, ensuring process cleanliness and device reliability.

Polymorphism and Customized Parameter Support

    C-plane (0001) orientation is supplied as standard, while special orientations including A-plane, R-plane and M-plane are also available, with customizable off-angle specifications. Parameters such as thickness, edge chamfer and flat/notch can be customized according to customer requirements, adapting to different device processes and equipment specifications.

High mechanical strength and compatibility with post-processing

    With a Mohs hardness of 9, second only to diamond, it has excellent mechanical rigidity and bending resistance. It can withstand various post-processing procedures such as thinning, dicing, PSS patterning and metallization without edge chipping or cracking, adapting to diverse device process solutions.

Standard Specifications

Typical Applications

1. Optoelectronic field: Blue/green/UV LED epitaxial growth, Mini/Micro LED display chip fabrication, high-efficiency lighting chip production lines
2. Power semiconductor field: Epitaxial substrate for GaN-based high-voltage power devices, fast-charging chips, automotive power electronic devices
3. RF and microelectronic field: Silicon-on-Sapphire (SOS) RF integrated circuits, high-frequency microwave device substrates
4. Optical and sensing field: High-precision optical windows, infrared detection devices, MEMS sensor substrates
5. Special semiconductor field: High-temperature electronic devices, radiation-resistant aerospace-grade electronic components

Quality Control

    A semiconductor-grade quality control system is implemented throughout the entire process. Each batch of products undergoes multi-dimensional inspection, and a complete Certificate of Analysis (COA) can be provided. Inspection items include dimensional accuracy inspection, crystal orientation deviation verification, surface flatness and roughness testing, visual defect screening (scratches, pits, edge chipping), cleanliness testing, and packaging sealing verification, ensuring product parameter consistency and process reliability.

FAQ

What is the core difference between 8-inch sapphire wafers and smaller 4/6-inch wafers?           

    The 8-inch wafer delivers a much larger usable epitaxial area — approximately 4 times that of a 4-inch wafer and 1.8 times that of a 6-inch wafer. It is compatible with high-capacity MOCVD reactors, boosts chip output per batch and lowers per-unit chip cost. It is better suited for mass production lines of Mini/Micro LED and high-voltage GaN power devices, while 4/6-inch wafers are more common for R&D and small-to-medium volume production.

Can the thickness of 8-inch sapphire wafers be customized?
    Yes. Standard thickness options include 650μm, 800μm and 1000μm, and custom thickness specifications can be manufactured to match customer process requirements. TTV, bow and warp parameters are strictly controlled for all thickness options to guarantee flatness and process compatibility.

Do you offer crystal orientations other than C-plane (0001), and can the off-angle be adjusted?
    Yes. Besides the standard C-plane for GaN LED epitaxy, A-plane, R-plane and M-plane orientations are available for SOS RF devices, non-polar GaN devices and specialty optical applications. The precise off-angle can also be customized per customer drawings or epitaxial process needs to optimize epitaxial film quality.

Can additional processing such as PSS patterning or metallization be applied to the wafers?
    Yes. Value-added services including PSS/NPSS patterning, full or localized backside metallization, precision edge chamfering and ultra-thin wafer thinning are available. Feasibility depends on pattern dimensions, coating materials, wafer thickness and required mechanical strength.

Do you support small-batch prototype orders for 8-inch sapphire wafers?
    Yes. Prototype quantities, lab-scale trial batches and maintenance replacement orders are all acceptable. Pricing and lead time will be evaluated based on customized parameters, processing difficulty and required quality grade.

Related products

4-Inch Sapphire Wafer | High-Quality Al₂O₃ Substrate for Semiconductor and Optical Applications

Customizable 0.2mm Monocrystalline Al2O3 Red Sapphire Bearing with 9 Mohs Hardness for Precision Watch Jewel Applications