Silicon Carbide (SiC) Substrate 6 inch 8 inch Laser Cutting For epitaxial preparation

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May 28, 2024
Keyword: SiC Substrate
Video Description:
Discover the advanced Silicon Carbide (SiC) Substrate in 6 inch and 8 inch sizes, designed for laser cutting and epitaxial preparation. Coherent's high-performance wafers enhance device efficiency, reduce costs, and support R&D to mass production. Customizable options include thick epilayers, tailored doping, and complex structures for optimal functionality.