Brief: Discover the advanced Silicon Carbide (SiC) Substrate in 6 inch and 8 inch sizes, designed for laser cutting and epitaxial preparation. Coherent's high-performance wafers enhance device efficiency, reduce costs, and support R&D to mass production. Customizable options include thick epilayers, tailored doping, and complex structures for optimal functionality.
Related Product Features:
Silicon Carbide (SiC) Substrate available in 6 inch and 8 inch sizes for laser cutting and epitaxial preparation.
High thermal conductivity (4.9 W/mK) and excellent electrical insulation for superior performance.
Breakdown voltage of 5.5 MV/cm and tensile strength >400 MPa for durability.
Customizable options include thick epilayers, buffer layers, and tailored doping levels.
Surface roughness Ra<0.5nm ensures precision for high-performance applications.
Supports complex structures like multilayer configurations, p-n junctions, and embedded layers.
Packaged in anti-static materials and rigid containers for maximum protection during shipping.
Minimum order quantity of 10pc with a supply ability of 1000pc/month.
Faqs:
What are the key applications of Silicon Carbide (SiC) Substrates?
SiC substrates are pivotal in power electronics and optoelectronics, enhancing device performance through high-quality epitaxial layers. They are ideal for large-scale production due to their superior thermal and electrical properties.
How are the SiC substrates packaged for shipping?
Each substrate is individually wrapped in anti-static material, placed in a custom-fit rigid container, and cushioned with foam or bubble wrap. Additional measures like silica gel packets control humidity to ensure optimal condition upon arrival.
What customization options are available for SiC substrates?
Customization includes thick epilayers, buffer layers, tailored doping levels, and complex structures like multilayer configurations and p-n junctions. Substrates are also available in 6 inch and 8 inch sizes to meet specific requirements.