10x10x0.5mm SiC 2sp 4H-SEMI 4H-N SIC Silicon Carbide Wafer

sic crystal
September 09, 2022
Category Connection: SiC Substrate
Brief: Discover the 10x10x0.5mm SiC 2sp 4H-SEMI 4H-N SIC Silicon Carbide Wafer, designed for high-performance power electronics. This wafer offers high crystal quality, low defect densities, and customizable options to meet your device fabrication needs. Ideal for transportation, energy, and industrial markets.
Related Product Features:
  • High crystal quality for demanding power electronics applications.
  • Low defect densities ensuring reliable performance.
  • Customizable to meet specific device fabrication needs.
  • Large diameter wafers for improved economies of scale.
  • Produced using state-of-the-art physical vapor transport (PVT) growth techniques.
  • Consistent mechanical characteristics for compatibility with fabrication processes.
  • Optimizes performance and total cost of ownership for next-gen devices.
  • Available in 150 mm size for enhanced production efficiency.
Faqs:
  • What are the key features of the 4H-SiC wafer?
    The wafer features high crystal quality, low defect densities, and customizable options for device fabrication, making it ideal for power electronics.
  • How is the SiC wafer produced?
    The wafer is produced using proprietary state-of-the-art physical vapor transport (PVT) growth techniques and advanced manufacturing processes.
  • Can the wafer be customized for specific needs?
    Yes, the wafer can be customized to meet performance and cost requirements, with options for low defect densities and specific tolerances.
  • What industries benefit from this wafer?
    Industries such as transportation, energy, and industrial markets benefit from the wafer's high-performance capabilities in power electronics.