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4H-N Type SiC Substrate 10×10mm Small Wafer

sic crystal
July 30, 2025
Category Connection: SiC Substrate
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Tags:
#sic wafer #sic substrate #silicon carbide substrate
Brief: Ever wondered how the 4H-N Type SiC Substrate 10×10mm Small Wafer can revolutionize power electronics? This video showcases its high-performance features, customization options, and rigorous quality inspections, making it ideal for B2B applications in new energy vehicles, 5G infrastructure, and more.
Related Product Features:
  • High-performance semiconductor product based on silicon carbide (SiC) with 4H-SiC or 6H-SiC polytype options.
  • Dimensional tolerance controlled within ±0.05mm and surface roughness Ra < 0.5nm for precision applications.
  • Available in N-type and P-type doped versions with resistivity range of 0.01-100Ω*cm.
  • Exceptional thermal management with thermal conductivity up to 490 W/m*K, three times higher than silicon.
  • Superior electrical properties, including breakdown field strength of 2-4 MV/cm and electron saturation drift velocity of 2×10^7 cm/s.
  • Extreme environmental adaptability, maintaining stable performance at temperatures up to 600°C.
  • Outstanding mechanical performance with Vickers hardness of 28-32GPa and flexural strength exceeding 400MPa.
  • Customization services for crystal orientation, thickness, and doping concentration based on customer requirements.
Faqs:
  • What are the main applications of 10×10 mm SiC wafers?
    10×10 mm SiC wafers are primarily used for prototyping power electronics (MOSFETs/diodes), RF devices, and optoelectronic components due to their high thermal conductivity and voltage tolerance.
  • How does SiC compare to silicon for high-power applications?
    SiC offers 10x higher breakdown voltage and 3x better thermal conductivity than silicon, enabling smaller, more efficient high-temperature/high-frequency devices.
  • What customization options are available for the SiC Substrate 10×10mm?
    Customization options include non-standard shapes (round, rectangular, etc.), special doping profiles, backside metallization, and tailored solutions for crystal orientation, thickness, and doping concentration.
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