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4H-N Type SiC Substrate 10×10mm Small Wafer

sic crystal
July 30, 2025
Category Connection: SiC Substrate
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Tags:
#sic wafer #sic substrate #silicon carbide substrate
Brief: Discover the 4H-N Type SiC Substrate 10x10mm Wafer, a high-performance semiconductor product for power electronics. With exceptional thermal management and superior electrical properties, this wafer is ideal for new energy vehicles, 5G infrastructure, and aerospace applications. Customizable shapes and dimensions available.
Related Product Features:
  • 4H-N Type SiC Substrate with 10x10mm dimensions and ±0.05mm tolerance.
  • Thermal conductivity up to 490 W/m*K, three times higher than silicon.
  • Breakdown field strength of 2-4 MV/cm, ten times that of silicon.
  • Stable performance at temperatures up to 600°C with low thermal expansion.
  • Vickers hardness of 28-32GPa and flexural strength exceeding 400MPa.
  • Customizable crystal orientation, thickness, and doping concentration.
  • Ideal for power electronics, RF devices, and optoelectronic components.
  • Rigorous quality inspections including XRD and optical microscopy.
Faqs:
  • What are the main applications of 10×10 mm SiC wafers?
    10×10 mm SiC wafers are primarily used for prototyping power electronics (MOSFETs/diodes), RF devices, and optoelectronic components due to their high thermal conductivity and voltage tolerance.
  • How does SiC compare to silicon for high-power applications?
    SiC offers 10x higher breakdown voltage and 3x better thermal conductivity than silicon, enabling smaller, more efficient high-temperature/high-frequency devices.
  • What customization options are available for the SiC Substrate 10×10mm?
    Customization options include non-standard shapes (round, rectangular), special doping profiles, backside metallization, and tailored crystal orientation, thickness, and doping concentration.
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