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4H-SEMI SiC

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August 22, 2024
Category Connection: SiC Substrate
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4H-SEMI SiC
Tags:
#sic wafer #sic substrate #silicon carbide substrate
Brief: Discover the 4H-SEMI SiC Substrate Cutting Disc, a high-hardness solution for precision cutting. With a diameter of 10mm and thickness of 5mm, this SiC wafer is ideal for high-frequency, high-power electronic devices. Customizable and durable, it's perfect for industrial and scientific applications.
Related Product Features:
  • High hardness, up to 9.2 Mohs, second only to diamond.
  • Excellent thermal conductivity, suitable for high-temperature environments.
  • Wide bandgap characteristics for high-frequency, high-power electronic devices.
  • Customizable with design artwork to meet specific requirements.
  • Made from SiC monocrystal with a hexagonal crystal structure (4H SiC).
  • Low carrier concentrations and high insulation properties for high-power applications.
  • Suitable for power MOSFETs, power diodes, RF power amplifiers, and photoelectric sensors.
  • Available in prime grade and dummy grade with precise specifications.
Faqs:
  • What is the manufacturing process of 4H-Semi SiC cutting blades?
    Manufacturing 4H-semi-insulating silicon carbide (SiC) cutting blades requires a series of complex process steps, including crystal growth, cutting, grinding, and polishing.
  • What are the future prospects of 4H-SEMI SiC?
    The future prospects of 4H-SEMI SiC look promising due to its unique properties and the increasing demand for high-performance semiconductor materials in various industries.
  • What applications are 4H-SEMI SiC wafers suitable for?
    4H-SEMI SiC wafers are suitable for power electronics, RF and microwave devices, optoelectronic devices, and high-temperature and high-pressure applications due to their high voltage resistance and thermal conductivity.
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