This system is a high-end bonding equipment specifically designed for silicon carbide (SiC) power device manufacturing, supporting 2 to 12-inch wafer specifications. The system incorporates advanced room-temperature direct bonding and surface-activated bonding technologies, with special optimization for SiC-SiC and SiC-Si heterogeneous bonding processes.
Brief: Discover the advanced Wafer Bonding Equipment designed for room temperature and hydrophilic bonding of Si-SiC and Si-Si wafers ranging from 2 to 12 inches. This high-end system features ultra-high precision optical alignment, closed-loop temperature/pressure control, and supports various bonding processes for power semiconductor device fabrication.
Related Product Features:
Supports direct bonding and plasma-activated bonding for 2"-12" wafers.
Ultra-high precision optical alignment with ≤±0.5 μm accuracy.
Precision adjustable pressure control ranging from 0-10 MPa.
Temperature range from RT-500°C with optional preheat/annealing module.
Ultra-high vacuum environment (≤5×10⁻⁶ Torr) for contaminant-free bonding.
Industrial-grade touch HMI with ≥50 stored process recipes.
Triple interlock protection for safety (pressure/temperature/vacuum).
Optional robotic wafer handling and SECS/GEM communication protocol support.
Faqs:
What are the advantages of room-temperature wafer bonding compared to thermal bonding?
Room-temperature bonding prevents thermal stress and material degradation, enabling direct bonding of dissimilar materials (e.g., SiC-LiNbO₃) without high-temperature limitations.
Which materials can be bonded using room-temperature wafer bonding technology?
It supports bonding of semiconductors (Si, SiC, GaN), oxides (LiNbO₃, SiO₂), and metals (Cu, Au), ideal for MEMS, 3D ICs, and optoelectronic integration.
What applications is the Wafer Bonding Equipment suitable for?
It is ideal for MEMS device packaging, CIS image sensors, 3D IC integration, compound semiconductor devices, and biochip fabrication.