Wafer Bonding Equipment Room Temperature Bondin Hydrophilic Bonding

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April 15, 2025
Category Connection: Semiconductor Equipment
This system is a high-end bonding equipment specifically designed for silicon carbide (SiC) power device manufacturing, supporting 2 to 12-inch wafer specifications. The system incorporates advanced room-temperature direct bonding and surface-activated bonding technologies, with special optimization for SiC-SiC and SiC-Si heterogeneous bonding processes.
Brief: Discover the advanced Wafer Bonding Equipment designed for room temperature and hydrophilic bonding of Si-SiC and Si-Si wafers ranging from 2 to 12 inches. This high-end system features ultra-high precision optical alignment, closed-loop temperature/pressure control, and supports various bonding processes for power semiconductor device fabrication.
Related Product Features:
  • Supports direct bonding and plasma-activated bonding for 2"-12" wafers.
  • Ultra-high precision optical alignment with ≤±0.5 μm accuracy.
  • Precision adjustable pressure control ranging from 0-10 MPa.
  • Temperature range from RT-500°C with optional preheat/annealing module.
  • Ultra-high vacuum environment (≤5×10⁻⁶ Torr) for contaminant-free bonding.
  • Industrial-grade touch HMI with ≥50 stored process recipes.
  • Triple interlock protection for safety (pressure/temperature/vacuum).
  • Optional robotic wafer handling and SECS/GEM communication protocol support.
Faqs:
  • What are the advantages of room-temperature wafer bonding compared to thermal bonding?
    Room-temperature bonding prevents thermal stress and material degradation, enabling direct bonding of dissimilar materials (e.g., SiC-LiNbO₃) without high-temperature limitations.
  • Which materials can be bonded using room-temperature wafer bonding technology?
    It supports bonding of semiconductors (Si, SiC, GaN), oxides (LiNbO₃, SiO₂), and metals (Cu, Au), ideal for MEMS, 3D ICs, and optoelectronic integration.
  • What applications is the Wafer Bonding Equipment suitable for?
    It is ideal for MEMS device packaging, CIS image sensors, 3D IC integration, compound semiconductor devices, and biochip fabrication.