Wafer Thinning Equipment
This equipment enables precision thinning of 4"-12" brittle semiconductor materials including silicon (Si), silicon carbide (SiC), gallium arsenide (GaAs), and sapphire substrates, achieving thickness control accuracy of ±1 μm and total thickness variation (TTV) ≤2 μm to meet the stringent requirements of advanced packaging and power device fabrication.
Wafer Thinning System
Precision Thinning Equipment
Wafer Thinning Equipment
SiC wafer
Si wafer
Sapphire wafer
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Wafer Thinning System Precision Thinning Equipment SiC Si Wafer Compatible 4 -12inch Wafer Capacity
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Micro-Jet Laser Equipment for Silicon Carbide Wafer Rounding & Silicon-Based Wafer Dicing
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6inch 8inch 12inch LPCVD Oxidation Furnace For Uniform Thin-Film Deposition
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Fully Automatic Precision Dicing Saw Equipment For 8inch 12inch Wafer Cutting
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Infrared Picosecond Dual-Platform Laser Cutting equipment for Sapphire / Quartz / Optical Glass Processing
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