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2inch 3inch Dia100m 4H-N Type Silicon Carbide Wafer Production Grade For Semiconductor Device

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2inch 3inch Dia100m 4H-N Type Silicon Carbide Wafer Production Grade For Semiconductor Device

China 2inch 3inch Dia100m 4H-N Type Silicon Carbide Wafer Production Grade For Semiconductor Device supplier
2inch 3inch Dia100m 4H-N Type Silicon Carbide Wafer Production Grade For Semiconductor Device supplier 2inch 3inch Dia100m 4H-N Type Silicon Carbide Wafer Production Grade For Semiconductor Device supplier 2inch 3inch Dia100m 4H-N Type Silicon Carbide Wafer Production Grade For Semiconductor Device supplier

Large Image :  2inch 3inch Dia100m 4H-N Type Silicon Carbide Wafer Production Grade For Semiconductor Device

Product Details:

Place of Origin: china
Brand Name: zmkj
Model Number: 4inch--N,4H-semi

Payment & Shipping Terms:

Minimum Order Quantity: 1pcs
Price: by required
Packaging Details: Packaged in a class 100 clean room environment, in cassettes of single wafer containers
Delivery Time: 10-20days
Supply Ability: 100pcs/months
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Detailed Product Description
Material: Sic Crystal Industry: Semiconductor Wafer
Application: Semiconductor, Led, Device, Power Electronics,5G Color: Blue, Green, White
Type: 4H,6H, DOPED, No Doped, High Purity

4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates,Silicon Carbide substrates for semiconductor device,

 

 Application areas

 

1 high frequency and high power electronic devices Schottky diodes,

 

    JFET, BJT, PiN, diodes, IGBT, MOSFET

 

2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED

 

Advantagement

• Low lattice mismatch
• High thermal conductivity
• Low power consumption
• Excellent transient characteristics
• High band gap

 

 

Silicon Carbide SiC crystal substrate wafer carborundum

SILICON CARBIDE MATERIAL PROPERTIES

Product Name: Silicon carbide (SiC) crystal substrate
Product Description: 2-6inch 
Technical parameters:
Cell structure Hexagonal
Lattice constant a = 3.08 Å c = 15.08 Å
Priorities ABCACB (6H)
Growth method MOCVD
Direction Growth axis or Partial (0001) 3.5 °
Polishing Si surface polishing
Bandgap 2.93 eV (indirect)
Conductivity type N or seimi ,high purity
Resistivity 0.076 ohm-cm
Permittivity e (11) = e (22) = 9.66 e (33) = 10.33
Thermal conductivity @ 300K 5 W / cm. K
Hardness 9.2 Mohs
Specifications: 6H N-type 4H N-type semi-insulating dia2 "x0.33mm, dia2" x0.43mm,dia2''x1mmt, 10x10mm, 10x5mm Single throw or double throw, Ra <10A
Standard Packaging: 1000 clean room, 100 clean bag or single box packaging

 

2. substrates size of standard

4 inch diameter Silicon Carbide (SiC) Substrate Specification

Grade Zero MPD Grade Production Grade Research Grade Dummy Grade
Diameter 100.0 mm±0.5 mm
Thickness 350 μm±25μm (200-500um thickness also is ok)
Wafer Orientation Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI
Micropipe Density ≤1 cm-2 ≤5 cm-2 ≤15 cm-2 ≤50 cm-2
Resistivity 4H-N 0.015~0.028 Ω•cm
6H-N 0.02~0.1 Ω•cm
4/6H-SI ≥1E5 Ω·cm
Primary Flat and length {10-10}±5.0° ,32.5 mm±2.0 mm
Secondary Flat Length 18.0mm±2.0 mm
Secondary Flat Orientation Silicon face up: 90° CW. from Prime flat ±5.0°
Edge exclusion 3 mm
TTV/Bow /Warp ≤15μm /≤25μm /≤40μm
Roughness Polish Ra≤1 nm ,CMP Ra≤0.5 nm
Cracks by high intensity light None 1 allowed, ≤2 mm Cumulative length ≤ 10mm, single length≤2mm
Hex Plates by high intensity light Cumulative area ≤1% Cumulative area ≤1% Cumulative area ≤3%
Polytype Areas by high intensity light None Cumulative area ≤2% Cumulative area ≤5%
Scratches by high intensity light 3 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length 5 scratches to 1×wafer diameter cumulative length
edge chip None 3 allowed, ≤0.5 mm each 5 allowed, ≤1 mm each
Contamination by high intensity light None

Sic wafer & ingots  2-6inch and other customized size   also can be provided.

 

 

3.Pictures of delivery  Products before

2inch 3inch Dia100m 4H-N Type Silicon Carbide Wafer Production Grade For Semiconductor Device2inch 3inch Dia100m 4H-N Type Silicon Carbide Wafer Production Grade For Semiconductor Device

2inch 3inch Dia100m 4H-N Type Silicon Carbide Wafer Production Grade For Semiconductor Device

Delivery & Package

2inch 3inch Dia100m 4H-N Type Silicon Carbide Wafer Production Grade For Semiconductor Device

 

 

Contact Details
SHANGHAI FAMOUS TRADE CO.,LTD

Contact Person: Wang

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