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8inch 6inch 4H-N Type Sic Substrate Wafer Production Grade For Radio Frequency Devices

Name: 8inch 6inch 4H-N Type Sic Substrate Wafer Production Grade For Radio Frequency Devices
Brand: tankblue
SKU: 4h-n
Rating: 5 (194 reviews)

Place of Origin	CHINA
Brand Name	tankblue
Certification	CE
Model Number	4h-n

Product Details

Materials:

SIC Crystal

Type:

4h-n

Purity:

99.9995%

Resistivity:

0.015~0.028ohm.cm

Size:

2-8inch 2inch, 3inch ,4inch ,6inch ,8inch

Thickness:

350um Or Customized

MPD:

《2cm-2

Application:

For SBD, MOS Device

TTV:

《15um

Bow:

《25um

Warp:

《45um

Surface:

Si-face CMP, C-face MP

High Light:

6inch Sic Substrate

SBD MOS Device SiC Substrate

4H-N Silicon Carbide Substrates

Product Description

4inch 6inch 8inch 4H-N sic wafers dummy Prime Production grade for SBD MOS Device, 8inch 6inch 4H-N Type Sic Substrate Wafer Production Grade For Radio Frequency Devices

SiC feature

SiC (Silicon Carbide) is a compound material consists of silicon (Si) and carbon (C), that has high hardness and heat resistance, and it’s chemically stable.
As it has a wide bandgap, the application to the semiconductor material is getting promoted.

With the high accuracy and high rigid grinding system of our edge grinder, smooth finish can be achieved even with SiC wafer that is difficult to cut material.

Comparison of third-generation semiconductor materials

SiC crystal is a third-generation semiconductor material, which has great advantages in low-power, miniaturization, high-voltage and high-frequency application scenarios. The third-generation semiconductor materials are represented by silicon carbide and gallium nitride. Compared with the previous two generations of semiconductor materials, the biggest advantage is its wide band-free width, which ensures that it can penetrate higher electric field strength and is suitable for preparing high-voltage and high-frequency power devices.

Classification

Silicon carbide SiC substrates can be divided into two categories: semi-insulated (High Purity un-dopend and V-doped 4H-SEMI) silicon carbide substrates with high resistivity (resistorivity ≥107Ω·cm), and conductive silicon carbide substrates with low resistivity (the resistivity range is 15-30mΩ·cm).

8inch 6inch 4H-N Type Sic Substrate Wafer Production Grade For Radio Frequency Devices 0

Application

8inch 6inch 4H-N Type Sic Substrate Wafer Production Grade For Radio Frequency Devices 3

Specification for 8inch 4H-N sic wafers .(2inch,3inch 4inch ,8inch sic wafer also is avaiable)

Size: 8inch;
Diameter: 200mm±0.2;
Thickness: 500um±25;
Surface Orientation: 4 toward [11-20]±0.5°;
Notch orientation:[1-100]±1°；
Notch depth: 1±0.25mm；
Micropipe: <1cm2;
Hex Plates: None Permitted;
Resistivity: 0.015~0.028Ω;
EPD:<8000cm2;
TED:<6000cm2
BPD:<2000cm2
TSD:<1000cm2
SF: area<1%
TTV≤15um；
Warp≤40um；
Bow≤25um；
Poly areas: ≤5%;
Scratch: <5 and Cumulative Length< 1 Wafer Diameter;
Chips/Indents: None permit D>0.5mm Width and Depth;
Cracks: None;
Stain: None
Wafer edge: Chamfer;
Surface finish: Double Side Polish, Si Face CMP;
Packing: Multi-wafer Cassette Or Single Wafer Container;

Industrial chain

The silicon carbide SiC industrial chain is divided into substrate material preparation, epitaxial layer growth, device manufacturing and downstream applications. Silicon carbide monocrystals are usually prepared by physical vapor transmission (PVT method), and then epitaxial sheets are generated by chemical vapor deposition (CVD method) on the substrate, and the relevant devices are finally made. In the industrial chain of SiC devices, due to the difficulty of substrate manufacturing technology, the value of the industrial chain is mainly concentrated in the upstream substrate link.

8inch 6inch 4H-N Type Sic Substrate Wafer Production Grade For Radio Frequency Devices

6inch Sic Substrate

SBD MOS Device SiC Substrate

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sic wafer,

sic substrate,

silicon carbide substrate

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