HPSI 4H-SEMI Transparent Colorless Customized SIC Lens

Place of Origin china
Brand Name ZMSH
Model Number high purity un-doped 4h-semi
Minimum Order Quantity 5PCS
Price 600USD/pcs
Packaging Details Packaged in a class 100 clean room environment, in cassettes of single wafer containers
Delivery Time 10-20days
Payment Terms Western Union, T/T
Supply Ability 5000pcs/months
Product Details
Material Silicon Carbide Crystal Size 5X5x10mmt Or Customzied
Application Optical Resistivity >1E7
Type HPSI Thickness 0.5mm Or 0.35mm Or Cutomzied
Surface DSP Orientation 0° Off
High Light



4H-SEMI SIC lens


HPSI silicon carbide crystal lens

Leave a Message
Product Description

HPSI 4H-SEMI transparent colorless customized sic lens high purity



Application of silicon carbide in power device industry

Performance Unit Silicon Si Silicon Carbide SiC Gallium Nitride GaN
Band gap eV                                  1.12 3.26 3.41
Breakdown electric field MV/cm      0.23 2.2 3.3
Electron mobility cm^2/Vs             1400 950 1500
Drift speed 10^7 cm/s                     1 2.7 2.5
Thermal conductivity W/cmK             1.5 3.8 1.3

ZMSH offers SiC wafer and Epitaxy: SiC wafer is the third generation wide bandgap semiconductor material with excellent performance. It has the advantages of wide bandgap, high thermal conductivity, high breakdown electric field, high intrinsic temperature, radiation resistance, good chemical stability and high electron saturation drift rate. SiC wafer has also great application prospects in aerospace, rail transit, photovoltaic power generation, power transmission, new energy vehicles and other fields, and will bring revolutionary changes to power electronics technology. Si face or C face is CMP as epi-ready grade, packed by nitrogen gas, each wafer is in one wafer container, under 100 clean class room.

Epi-ready SiC wafers has N type or Semi-insulating, its polytype are 4H or 6H in different quality grades, Micropipe Density (MPD): Free, <5/cm2, <10/cm2, <30/cm2,<100/cm2, and the available size is 2”,3”,4” and 6”.Regarding SiC Epitaxy, its Wafer to wafer thickness uniformity: 2% , and Wafer to wafer doping uniformity: 4%, available doping concentration are from undoped, E15,E16,E18,E18/cm3, n type and p type epi layer are both available, epi defects are below 20/cm2; All the substrate should be used production grade for epi growth;N-type epi layers <20 microns are preceded by n-type, E18 cm-3, 0.5 μm buffer layer; N-type epi layers≥20 microns are preceded by n-type, E18, 1-5 μm buffer layer; N-type doping is determined as an average value across the wafer (17 points) using Hg probe CV; Thickness is determined as an average value across the wafer (9 points) using FTIR.

Sic wafer & ingots  2-6inch and other customized size   also can be provided.


3.Products detail display



HPSI 4H-SEMI Transparent Colorless Customized SIC Lens 0HPSI 4H-SEMI Transparent Colorless Customized SIC Lens 1HPSI 4H-SEMI Transparent Colorless Customized SIC Lens 2HPSI 4H-SEMI Transparent Colorless Customized SIC Lens 3



Delivery & Package


  • Q1. Is your company a factory or trade company?
  • We are the factory and we also can do export ourself.
  • Q2.Is you company only work with sic  business?
  • yes; however we don‘t grow the sic crystal by self. 
  • Q3. Could you supply sample?
  • Yes,we can supply sapphire sample according to customer's requirement
  • Q4. Do you have any stock of sic wafers ?
  • we usually keep some standard size sic wafers from 2-6inch wafers  in stock
  • Q5.Where is your company located.
  • Our company located in shanghai ,China.
  • Q6. How long will take to get the products.
  • Generally it will take 3~4 weeks to process.It is depend on the and the size of the  products.