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6H Or 4H N-Type Or Semi-Insulating SiC Substrates 2-8Inch Silicon Carbide Wafers
  • 6H Or 4H N-Type Or Semi-Insulating SiC Substrates 2-8Inch Silicon Carbide Wafers
  • 6H Or 4H N-Type Or Semi-Insulating SiC Substrates 2-8Inch Silicon Carbide Wafers
  • 6H Or 4H N-Type Or Semi-Insulating SiC Substrates 2-8Inch Silicon Carbide Wafers

6H Or 4H N-Type Or Semi-Insulating SiC Substrates 2-8Inch Silicon Carbide Wafers

Place of Origin CHINA
Brand Name SICC
Certification CE
Model Number 4h-n
Product Details
SIC Crystal
2-8inch 2inch, 3inch ,4inch ,6inch ,8inch
350um Or Customized
For SBD, MOS Device
Si-face CMP, C-face MP
Product Description

2inch Silicon Carbide Wafers 6H or 4H N-type or Semi-Insulating SiC Substrates


What is a sic wafer

A SiC wafer is a semiconductor material that has excellent electrical and thermal properties. It is a high-performance semiconductor that is ideal for a wide variety of applications. In addition to its high thermal resistance, it also features a very high level of hardness.



Advantages of Silicon Carbide

  • Hardness

There are numerous advantages to using silicon carbide over more traditional silicon substrates. One of the major advantages is its hardness. This gives the material many advantages, in high speed, high temperature and/or high voltage applications.

Silicon carbide wafers have high thermal conductivity, which means they can transfer heat from one point to another well. This improves its electrical conductivity and ultimately miniaturization, one of the common goals of switching to SiC wafers.

  • ​Thermal capabilities

​​High resistance to thermal shock. This means they have the ability to change temperatures rapidly without breaking or cracking. This creates a clear advantage when fabricating devices as it is another toughness characteristic that improves the lifetime and performance of silicon carbide in comparison to traditional bulk silicon.



  Silicon carbide SiC substrates can be divided into two categories: semi-insulated (High Purity un-dopend and V-doped 4H-SEMI) silicon carbide substrates with high resistivity (resistorivity ≥107Ω·cm), and conductive silicon carbide substrates with low resistivity (the resistivity range is 15-30mΩ·cm).


Specification for 6inch 4H-N sic wafers .
(2inch,3inch 4inch ,8inch sic wafer also is available)


Zero MPD Production

Grade (Z Grade)

Standard Production Grade (P Grade)

Dummy Grade

(D Grade)

Diameter 99.5 mm~100.0 mm
Thickness 4H-N 350 μm±20 μm 350 μm±25 μm
4H-SI 500 μm±20 μm 500 μm±25 μm
 Wafer Orientation Off axis: 4.0°toward <1120 > ±0.5°for 4H-N, On axis: <0001>±0.5°for 4H-SI
 Micropipe Density 4H-N ≤0.5cm-2 ≤2 cm-2 ≤15 cm-2
4H-SI ≤1cm-2 ≤5 cm-2 ≤15 cm-2
※ Resistivity 4H-N 0.015~0.025 Ω·cm 0.015~0.028 Ω·cm
4H-SI ≥1E9 Ω·cm ≥1E5 Ω·cm
 Primary Flat Orientation {10-10} ±5.0°
 Primary Flat Length 32.5 mm±2.0 mm
Secondary Flat Length 18.0 mm±2.0 mm
 Secondary Flat Orientation Silicon face up: 90°CW. from Prime flat ±5.0°
 Edge Exclusion 3 mm
LTV/TTV/Bow /Warp ≤3 μm/≤5 μm/≤15 μm/≤30 μm ≤10 μm/≤15 μm/≤25 μm/≤40 μm

※ Roughness

Polish Ra≤1 nm
CMP Ra≤0.2 nm Ra≤0.5 nm

 Edge Cracks By High Intensity Light


None Cumulative length ≤ 10 mm, single length≤2 mm
 Hex Plates By High Intensity Light Cumulative area ≤0.05% Cumulative area ≤0.1%
 Polytype Areas By High Intensity Light None Cumulative area≤3%
 Visual Carbon Inclusions Cumulative area ≤0.05% Cumulative area ≤3%

Silicon Surface Scratches By High Intensity Light

None Cumulative len`gth≤1×wafer diameter
Edge Chips High By Intensity Light None permitted ≥0.2 mm width and depth 5 allowed, ≤1 mm each

Silicon Surface Contamination By High Intensity

Packaging Multi-wafer Cassette or Single Wafer Container



6H Or 4H N-Type Or Semi-Insulating SiC Substrates 2-8Inch Silicon Carbide Wafers 06H Or 4H N-Type Or Semi-Insulating SiC Substrates 2-8Inch Silicon Carbide Wafers 1






Industrial chain

The silicon carbide SiC industrial chain is divided into substrate material preparation, epitaxial layer growth, device manufacturing and downstream applications. Silicon carbide monocrystals are usually prepared by physical vapor transmission (PVT method), and then epitaxial sheets are generated by chemical vapor deposition (CVD method) on the substrate, and the relevant devices are finally made. In the industrial chain of SiC devices, due to the difficulty of substrate manufacturing technology, the value of the industrial chain is mainly concentrated in the upstream substrate link.


ZMSH company provides provides 100mm and 150mm SiC wafers. With its hardness (SiC is the second hardest material in the world) and stability under heat and high voltage current, this material is being widely used in several industries.



ZMSH company offers the best price on the market for high quality SiC wafers and SiC crystal substrates up to six (6) inch diameter. Our price matching policy guarantees you the best price for the SiC crystal products with comparable specifications. CONTACT US today to get your quote.



Customized SiC crystal products can be made to meet customer's particular requirements and specifications.

Epi-wafers can also be custom made upon request.





Q: What's the wayof shipping and cost and pay term ?

A:(1) We accept 50% T/T In advance and left 50% before delivery by DHL, Fedex, EMS etc.

(2) If you have your own express account, it's great.If not,we could help you ship them.

Freight is in accordance with the actual settlement.


Q: What's your MOQ?

A: (1) For inventory, the MOQ is 3pcs.

(2) For customized products, the MOQ is 10pcs up.


Q: Can I customize the products based on my need?

A: Yes, we can customize the material, specifications and shape, size based on your needs.


Q: What's the delivery time?

A: (1) For the standard products

For inventory: the delivery is 5 workdays after you place the order.

For customized products: the delivery is 2 or 3 weeks after you place the order.

(2) For the special-shaped products, the delivery is 4 workweeks after you place the order.


Contact Us at Any Time

Rm5-616,No.851,Dianshanhu avenue, Qingpu area,Shanghai city,CHINA
Send your inquiry directly to us