4inch 6inch 8inch 4H-SiCOI Wafers Composite SiC on Insulator Substrates
SICOI (Silicon Carbide on Insulator) wafers represent an advanced composite substrate technology fabricated through either Smart Cut™ or Bonding & Thinning processes. ZMSH supply 4-6 inch 4H-SICOI wafers by integrating high-quality SiC thin films with insulating layers (SiO₂/AlN) on silicon or SiC substrates via hydrophilic bonding or plasma-activated bonding techniques. Smart Cut™ Process: Utilizes hydrogen ion implantation, low-temperature bonding, and precision exfoliation to achieve ultra-thin SiC layers (50nm-20μm) with thickness uniformity of ±20nm, ideal for high-frequency, low-loss devices. Grinding+CMP Process: Suitable for thicker film requirements (200nm to custom thicknesses) with ±100nm uniformity, offering cost efficiency for power electronics applications. ZMSH provide customizable conductive or semi-insulating SiC films, with options for ion implantation annealing optimization or direct thinning/polishing to meet diverse performance and cost requirements.
Key Features of SiCOI Wafers
| Component |
Property |
Specification |
Measurement Standard |
| 4H-SiC Film |
Crystal Structure |
Single-crystal 4H-SiC |
ASTM F2094 |
| Defect Density |
<10³ cm⁻² (threading dislocations) |
|
| Surface Roughness (Ra) |
<0.5 nm |
AFM measurement |
| Semi-insulating Resistivity |
>10⁶ Ω·cm |
SEMI MF397 |
| N-type Doping Range |
10¹⁶-10¹⁹ cm⁻³ |
|
| Thermal Conductivity |
>300 W/(m·K) |
|
| SiO₂ Layer |
Formation Method |
Thermal oxidation |
|
| Dielectric Constant (ε) |
3.9 |
JESD22-A109 |
| Breakdown Field Strength |
>10 MV/cm |
|
| Interface Trap Density |
<10¹¹ cm⁻²eV⁻¹ |
|
| Si Substrate |
Thermal Expansion (CTE) |
~3.5×10⁻⁶/°C |
|
| Wafer Bow (8-inch) |
<50 μm |
SEMI M1 |
| Temperature Stability |
>300°C |
|
| Integrated Performance |
Wafer Size Support |
4-8 inch formats |
|
Primary applications of SiCOI Wafers
1. Power Electronics
EV Inverters: SiC MOSFETs on SICOI substrates operate at 1200V with 30% lower switching losses, compatible with 800V fast-charging systems.
Industrial Motor Drives: SICOI wafers with AlN insulating layers enhance heat dissipation by 50%, supporting >10kW module packaging.
2. RF & 5G Communications
mmWave Power Amplifiers: GaN HEMTs on semi-insulating SICOI achieve 8W/mm output at 28GHz with >65% efficiency.
Phased Array Antennas: Low dielectric loss (tanδ<0.001) minimizes signal attenuation for satellite communications.
3. Quantum Computing & Sensing
Spin Qubit Carriers: Ultrathin SiC films (<100nm) provide low-noise environments, extending coherence times beyond 1ms.
High-Temp MEMS Sensors: Stable operation at 300°C for aerospace engine monitoring.
4. Consumer Electronics
Fast-Charging ICs: SICOI-based GaN devices enable >200W charging with 40% smaller footprint.
ZMSH's Services
As a leading wide-bandgap semiconductor substrate provider, we offer end-to-end technical support from R&D to mass production:
· Custom Development: Optimize SiC film thickness (nanoscale to microns), doping (N/P-type), and insulating layers (SiO₂/AlN/Si₃N₄) per device requirements.
· Process Consultation: Recommend Smart Cut™ (high precision) or Grinding+CMP (cost-effective) solutions with comparative data.
· Wafer-Level Testing: Includes interface state analysis, thermal resistance mapping, and high-voltage reliability validation.
Q&A
1. Q: What is SICOI wafer?
A: SICOI (Silicon Carbide on Insulator) wafer is an advanced composite substrate integrating single-crystal 4H-SiC film with SiO₂ insulating layer on silicon/sapphire base, enabling high-power and RF devices with superior thermal/electrical performance.
2. Q: How does SICOI compare to SOI?
A: SICOI offers 5x higher thermal conductivity (>300W/m·K) and 3x greater breakdown voltage (>8MV/cm) than SOI, making it ideal for 800V+ power electronics and 5G mmWave applications.
Tag: #4inch 6inch 8inch, #Customized, #4H-SiCOI Wafers, #Composite SiC on Insulator Substrates, #SiC, #SiO2, #Si
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